The prospect of detecting single-photon force effects in cavity optomechanics

Cavity optomechanical systems are approaching a strong-coupling regime where the coherent dynamics of nanomechanical resonators can be manipulated and controlled by optical fields at the single photon level. Here we propose an interferometric scheme able to detect optomechanical coherent interaction at the single-photon level which is experimentally feasible with state-of-the-art devices.Comment: 8 pages, 2 figure

Noise-assisted Mound Coarsening in Epitaxial Growth

We propose deposition noise to be an important factor in unstable epitaxial growth of thin films. Our analysis yields a geometrical relation H=(RWL)^2 between the typical mound height W, mound size L, and the film thickness H. Simulations of realistic systems show that the parameter R is a characteristic of the growth conditions, and generally lies in the range 0.2-0.7. The constancy of R in late-stage coarsening yields a scaling relation between the coarsening exponent 1/z and the mound height exponent \beta which, in the case of saturated mound slope, gives \beta = 1/z = 1/4.Comment: 4 pages, RevTex Macros, 3 eps figure

Nonlinear Dynamics of a Helicopter Model in Ground Resonance

An approximate theoretical method is presented which determined the limit cycle behavior of a helicopter model which has one or two nonlinear dampers. The relationship during unstable ground resonance oscillations between lagging motion of the blades and fuselage motion is discussed. An experiment was carried out on using a helicopter scale model. The experimental results agree with those of the theoretical analysis

Optical properties of Si/Si0.87Ge0.13 multiple quantum well wires

Nanometer-scale wires cut into a Si/Si0.87Ge0.13 multiple quantum well structure were fabricated and characterized by using photoluminescence and photoreflectance at temperatures between 4 and 20 K. It was found that, in addition to a low-energy broadband emission at around 0.8 eV and other features normally observable in photoluminescence measurements, fabrication process induced strain relaxation and enhanced electron-hole droplets emission together with a new feature at 1.131 eV at 4 K were observed. The latter was further identified as a transition related to impurities located at the Si/Si0.87Ge0.13 heterointerfaces

Magnetotransport properties of strained Ga0.95Mn0.05As epilayers close to the metal-insulator transition: Description using Aronov-Altshuler three-dimensional scaling theory

The magnitude of the anisotropic magnetoresistance (AMR) and the longitudinal resistance in compressively strained Ga0.95Mn0.05As epilayers were measured down to temperatures as low as 30 mK. Below temperatures of 3 K, the conductivity decreases [proportional]T^1/3 over 2 orders of magnitude in temperature. The conductivity can be well described within the framework of a three-dimensional scaling theory of Anderson's transition in the presence of spin scattering in semiconductors. It is shown that the samples are on the metallic side but very close to the metal-insulator transition. At lowest temperatures, a decrease in the AMR effect is observed, which is assigned to changes in the coupling between the remaining itinerant carriers and the local Mn 5/2-spin moments

Density of states and electron concentration of double heterojunctions subjected to an in-plane magnetic field

We calculate the electronic states of Al$_x$Ga$_{1-x}$As/GaAs/Al$_x$Ga$_{1-x}$As double heterojunctions subjected to a magnetic field parallel to the quasi two-dimensional electron gas. We study the energy dispersion curves, the density of states, the electron concentration and the distribution of the electrons in the subbands. The parallel magnetic field induces severe changes in the density of states, which are of crucial importance for the explanation of the magnetoconductivity in these structures. However, to our knowledge, there is no systematic study of the density of states under these circumstances. We attempt a contribution in this direction. For symmetric heterostructures, the depopulation of the higher subbands, the transition from a single to a bilayer electron system and the domination of the bulk Landau levels in the centre the wide quantum well, as the magnetic field is continuously increased, are presented in the ``energy dispersion picture'' as well as in the ``electron concentration picture'' and in the ``density of states picture''.Comment: J. Phys.: Condens. Matter 11 No 26 (5 July 1999) 5131-5141 Figures (three) embedde