Resistivity due to low-symmetrical defects in metals

The impurity resistivity, also known as the residual resistivity, is calculated ab initio using multiple-scattering theory. The mean-free path is calculated by solving the Boltzmann equation iteratively. The resistivity due to low-symmetrical defects, such as an impurity-vacancy pair, is calculated for the FCC host metals Al and Ag and the BCC transition metal V. Commonly, 1/f noise is attributed to the motion of such defects in a diffusion process.Comment: 24 pages in REVTEX-preprint format, 10 Postscript figures. Phys. Rev. B, vol. 57 (1998), accepted for publicatio

Comprehensive Comparison of Various Techniques for the Analysis of Elemental Distributions in Thin Films

The present work shows results on elemental distribution analyses in Cu(In,Ga)Se2 thin films for solar cells performed by use of wavelength-dispersive and energy-dispersive X-ray spectrometry (EDX) in a scanning electron microscope, EDX in a transmission electron microscope, X-ray photoelectron, angle-dependent soft X-ray emission, secondary ion-mass (SIMS), time-of-flight SIMS, sputtered neutral mass, glow-discharge optical emission and glow-discharge mass, Auger electron, and Rutherford backscattering spectrometry, by use of scanning Auger electron microscopy, Raman depth profiling, and Raman mapping, as well as by use of elastic recoil detection analysis, grazing-incidence X-ray and electron backscatter diffraction, and grazing-incidence X-ray fluorescence analysis. The Cu(In,Ga)Se2 thin films used for the present comparison were produced during the same identical deposition run and exhibit thicknesses of about 2 μm. The analysis techniques were compared with respect to their spatial and depth resolutions, measuring speeds, availabilities, and detection limit

Field testing and exploitation of genetically modified cassava with low-amylose or amylose-free starch in Indonesia

The development and testing in the field of genetically modified -so called- orphan crops like cassava in tropical countries is still in its infancy, despite the fact that cassava is not only used for food and feed but is also an important industrial crop. As traditional breeding of cassava is difficult (allodiploid, vegetatively propagated, outbreeding species) it is an ideal crop for improvement through genetic modification. We here report on the results of production and field testing of genetically modified low-amylose transformants of commercial cassava variety Adira4 in Indonesia. Twenty four transformants were produced and selected in the Netherlands based on phenotypic and molecular analyses. Nodal cuttings of these plants were sent to Indonesia where they were grown under biosafety conditions. After two screenhouse tests 15 transformants remained for a field trial. The tuberous root yield of 10 transformants was not significantly different from the control. Starch from transformants in which amylose was very low or absent showed all physical and rheological properties as expected from amylose-free cassava starch. The improved functionality of the starch was shown for an adipate acetate starch which was made into a tomato sauce. This is the first account of a field trial with transgenic cassava which shows that by using genetic modification it is possible to obtain low-amylose cassava plants with commercial potential with good root yield and starch quality

The influence of substrate pre treatment on the electronic properties of the Si SiO2 interface of ultra thin plasma oxides

The successful application of silicon oxide Si SiO2 interfaces for nanostructures in third generation photovoltaics necessitates ultra thin SiO2 films with low interface state densities Dit. As it is well known from investigations of MOS devices, on thermally prepared Si SiO2 interfaces, interfacial defects give rise to interface electronic charges such as interface trapped charges and fixed oxide charge. Therefore, alternative wet chemical preparation methods are required to achieve contamination free, atomically smooth Si substrate surfaces as starting point for deposition of ultra thin oxides. We prepared ultrathin SiO2 layers with a thickness in the range of 9 20 , by means of plasma oxidation utilizing thermalized atomic oxygen under ultrahigh vacuum conditions. The effects of wet chemical pre treatment, layer deposition and annealing processes on the electronic properties of the Si SiO2 interface were investigated by surface photovoltage SPV measurement