Calnan, S.

Frijnts, T.

Hammerschmidt, M.

Heidelberg, A.

Kirner, S.

Lockau, D.

Neubert, S.

Rech, B.

Schlatmann, R.

Schmidt, F.

Schwanke, C.

Schöpke, A.

Stannowski, B.

Zollondz, J. H.

IEEE Journal of Photovoltaics

Kirner, Simon

Hammerschmidt, Martin

Schwanke, Christoph

Lockau, Daniel

Calnan, Sonya

Frijnts, Tim

Neubert, Sebastian

Schöpke, Andreas

Schmidt, Frank

Zollondz, Jens-Hendrik

Heidelberg, Andreas

Stannowski, Bernd

Rech, Bernd

Schlatmann, Rutger

Publication Server of Zuse Institute Berlin (ZIB)

Implications of TCO Topography on Intermediate Reflector Design for a-Si/μc-Si Tandem Solar Cells — Experiments and Rigorous Optical Simulations

Simon Kirner

Martin Hammerschmidt

Christoph Schwanke

Daniel Lockau

Sonya Calnan

Tim Frijnts

Sebastian Neubert

Andreas Schopke

Frank Schmidt

Jens-Hendrik Zollondz

Andreas Heidelberg

Bernd Stannowski

Bernd Rech

Rutger Schlatmann

Crossref

Implications of TCO Topography on Intermediate Reflector Design for a-Si/μc-Si Tandem Solar Cells—Experiments and Rigorous Optical Simulations

The influence of the transparent conducting oxide  TCO  topography was studied on the performance of a silicon oxide intermediate reflector layer  IRL  in a Si  amp; 956;c Si tandem cells, both experimentally and by 3 D optical simulations. Therefore, cells with varying IRL thickness were deposited on three different types of TCOs. Clear differences were observed regarding the performance of the IRL as well as its ideal thickness, both experimentally and in the simulations. Optical modeling suggests that a small autocorrelation length is essential for a good performance. Design rules for both the TCO topography and the IRL thickness can be derived from this interpla

HZB Repository