Dissociative adsorption of molecules on graphene and silicene

Cataloged from PDF version of article.We study the interaction of H-2 , O-2 , CO, H-2 O and OH molecules with the vacancy defects of graphene and silicene. Atoms around the bare vacancy reconstruct and specific chemically active sites are created. While H-2 , O-2 and CO remain intact on both pristine graphene and silicene, these molecules can dissociate when they are placed at the close proximity of these chemically active sites and nucleate centers for the hydrogenation and oxygenation. Saturation of the dangling bonds at the defect sites by constituent atoms of dissociated molecules gives rise to significant modification of electronic and magnetic properties. We analyzed the mechanism of the dissociation and revealed a concerted action of surrounding host atoms together with dissociated molecules to lower the energy barrier needed for dissociation. The dissociations of H-2 O and OH are hindered by high energy barriers. Our study suggests that graphene and silicene can be functionalized by creating meshes of single vacancy, where specific molecules can dissociate, while some other molecules can be pinned

A study of semi-insulating GaN grown on AlN buffer/sapphire substrate by metalorganic chemical vapor deposition

Cataloged from PDF version of article.We report the remarkably improved crystal quality of semi-insulating GaN grown by metalorganic chemical vapor deposition on an AlN buffer layer, which is deposited on sapphire substrate. The electrical and structural properties are characterized by dark current-voltage transmission line model and X-ray diffraction measurements. It is found that the crystal quality of the GaN epilayer is strongly related with the growth temperature of the decreased-temperature GaN interlayer. In comparison with the normal GaN grown on sapphire, the crystal quality is remarkably improved along with a semi-insulating electrical character. The high-mobility field effect transistors device based on the semi-insulating GaN shows good pinch off properties. Our electrical measurement results of GaN grown directly on an AlN buffer indicated that the as-grown-undoped GaN is naturally semi-insulating material. The origination of the residual donors in normal GaN grown on sapphire substrate is also discussed. (c) 2006 Elsevier B.V. All rights reserved

Experimental Study of the Dynamic Interaction Between the Foundation of the NEES/UCSD Shake Table and the Surrounding Soil

The results of an extensive experimental study of the dynamic interaction between the foundation block for the NEES/UCSD Large High Performance Outdoor Shake Table and the surrounding soil are presented. The vibrations induced by the two large NEES/UCLA eccentric mass shakers were recorded at multiple stations within the reinforced concrete foundation block and on the soil up to distances of 270 m from the block. The results obtained for the deformation pattern of the reaction block, the frequency response at selected stations on the block, and the average rigid-body motion of the foundation and its dependence on frequency for longitudinal (EW) excitation are presented in detail. Comparison of the response during shaker-induced vibrations with that resulting from the much stronger actuator forces shows that linearity holds for the range of forces involved. The attenuation of the ground motion away from the reaction block is also described

Electron transport properties in Al0.25Ga0.75N/AIN/GaN hetrostructures with different InGaN back barrier layers and GaN channel thickness grown by MOCVD

Cataloged from PDF version of article.The electron transport properties in Al0.25Ga0.75N/AlN/GaN/InxGa1-xN/GaN double heterostructures with various indium compositions and GaN channel thicknesses were investigated. Samples were grown on c-plane sapphire substrates by MOCVD and evaluated using variable temperature Hall effect measurements. In order to understand the observed transport properties, various scattering mechanisms, such as acoustic phonon, optical phonon, interface roughness, background impurity, and alloy disorder, were included in the theoretical model that was applied to the temperature-dependent mobility data. It was found that low temperature (T 160 K), optical phonon scattering is the dominant scattering mechanism for AlGaN/AlN/GaN/InGaN/GaN heterostructures. The higher mobility of the structures with InGaN back barriers was attributed to the large conduction band discontinuity obtained at the channel/buffer interface, which leads to better electron confinement. (C) 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinhei

Evolution of the mosaic structure in InGaN layer grown on a thick GaN template and sapphire substrate

Cataloged from PDF version of article.The InxGa1-xN epitaxial layers, with indium (x) concentration changes between 0.16 and 1.00 (InN), were grown on GaN template/(0001) Al2O3 substrate by metal organic chemical vapour deposition. The indium content (x), lattice parameters and strain values in the InGaN layers were calculated from the reciprocal lattice mapping around symmetric (0002) and asymmetric (10-15) reflection of the GaN and InGaN layers. The characteristics of mosaic structures, such as lateral and vertical coherence lengths, tilt and twist angle and heterogeneous strain and dislocation densities (edge and screw dislocations) of the InGaN epilayers and GaN template layers were investigated by using high-resolution X-ray diffraction (HR-XRD) measurements. With a combination of Williamson-Hall (W-H) measurements and the fitting of twist angles, it was found that the indium content in the InGaN epilayers did not strongly effect the mosaic structures' parameters, lateral and vertical coherence lengths, tilt and twist angle, or heterogeneous strain of the InGaN epilayers

Germ line BRCA1 and BRCA2 gene mutations in Turkish breast cancer patients

Cataloged from PDF version of article.Germ line BRCA1 and/or BRCA2 mutations were screened in 50 Turkish breast and/or ovarian cancer patients composed of hereditary, familial, early onset and male cancer groups. Genomic DNA samples were tested by heteroduplex analysis and DNA sequencing. Two truncating BRCA2 mutations, one novel (6880 insG) and one previously reported (3034 delAAAC), were found in two out of six (33%) hereditary breast and/or ovarian cancer patients. A novel truncating (1200 insA) and a missense (2080A→G) BRCA1 mutation was found in two of 27 (7%) individuals in the early onset group. A total of four (8%) disease-causing mutations in 50 breast cancer patients were identified in BRCA1 and BRCA2 genes. In addition, five BRCA1 sequence variants have been identified in 23 patients. These results indicate that BRCA1 and BRCA2 genes are involved in some, but not all, forms of hereditary predisposition to breast cancer in the Turkish population. Copyright (C) 2000

p53 missense but not truncation mutations are associated with low levels of p21CIP1/WAF1 mRNA expression in primary human sarcomas

Many growth-suppressing signals converge to control the levels of the CDK inhibitor p21CIP1/WAF1. Some human cancers exhibit low levels of expression of p21CIP1/WAF1and mutations in p53 have been implicated in this down-regulation. To evaluate whether the presence of p53 mutations was related to the in vivo expression of p21CIP1/WAF1 mRNA in sarcomas we measured the p21CIP1/WAF1 mRNA levels for a group of 71 primary bone and soft tissue tumours with known p53 status. As expected, most tumours with p53 mutations expressed low levels of p21CIP1/WAF1 mRNA. However, we identified a group of tumours with p53 gene mutations that exhibited normal or higher levels of p21CIP1/WAF1 mRNA. The p53 mutations in the latter group were not the common missense mutations in exons 4–9, but were predominantly nonsense mutations predicted to result in truncation of the p53 protein. The results of this study suggest that different types of p53 mutations can have different effects on the expression of downstream genes such as p21CIP1/WAF1 in human sarcomas. © 2001 Cancer Research Campaign http://www.bjcancer.co

Missense mutation in the ATPase, aminophospholipid transporter protein ATP8A2 is associated with cerebellar atrophy and quadrupedal locomotion

Cataloged from PDF version of article.Cerebellar ataxia, mental retardation and dysequilibrium syndrome is a rare and heterogeneous condition. We investigated a consanguineous family from Turkey with four affected individuals exhibiting the condition. Homozygosity mapping revealed that several shared homozygous regions, including chromosome 13q12. Targeted next-generation sequencing of an affected individual followed by segregation analysis, population screening and prediction approaches revealed a novel missense variant, p.I376M, in ATP8A2. The mutation lies in a highly conserved C-terminal transmembrane region of E1 E2 ATPase domain. The ATP8A2 gene is mainly expressed in brain and development, in particular cerebellum. Interestingly, an unrelated individual has been identified, in whom mental retardation and severe hypotonia is associated with a de novo t(10;13) balanced translocation resulting with the disruption of ATP8A2. These findings suggest that ATP8A2 is involved in the development of the cerebro-cerebellar structures required for posture and gait in humans. © 2013 Macmillan Publishers Limited All rights reserved

Electrical conduction properties of Si δ-doped GaAs grown by MBE

The temperature dependent Hall effect and resistivity measurements of Si δ-doped GaAs are performed in a temperature range of 25-300 K. The temperature dependence of carrier concentration shows a characteristic minimum at about 200 K, which indicates a transition from the conduction band conduction to the impurity band conduction. The temperature dependence of the conductivity results are in agreement with terms due to conduction band conduction and localized state hopping conduction in the impurity band. It is found that the transport properties of Si δ-doped GaAs are mainly governed by the dislocation scattering mechanism at high temperatures. On the other hand, the conductivity follows the Mott variable range hopping conduction (VRH) at low temperatures in the studied structures. © 2009 Elsevier B.V. All rights reserved