23,590 research outputs found

    Carbon-doped ZnO: A New Class of Room Temperature Dilute Magnetic Semiconductor

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    We report magnetism in carbon doped ZnO. Our first-principles calculations based on density functional theory predicted that carbon substitution for oxygen in ZnO results in a magnetic moment of 1.78 μB\mu_B per carbon. The theoretical prediction was confirmed experimentally. C-doped ZnO films deposited by pulsed laser deposition with various carbon concentrations showed ferromagnetism with Curie temperatures higher than 400 K, and the measured magnetic moment based on the content of carbide in the films (1.53.0μB1.5 - 3.0 \mu_B per carbon) is in agreement with the theoretical prediction. The magnetism is due to bonding coupling between Zn ions and doped C atoms. Results of magneto-resistance and abnormal Hall effect show that the doped films are nn-type semiconductors with intrinsic ferromagnetism. The carbon doped ZnO could be a promising room temperature dilute magnetic semiconductor (DMS) and our work demonstrates possiblity of produing DMS with non-metal doping.Comment: REVtex source with 4 figures in eps forma

    Reversible Fluorination of Graphene: towards a Two-Dimensional Wide Bandgap Semiconductor

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    We report the synthesis and evidence of graphene fluoride, a two-dimensional wide bandgap semiconductor derived from graphene. Graphene fluoride exhibits hexagonal crystalline order and strongly insulating behavior with resistance exceeding 10 GΩ\Omega at room temperature. Electron transport in graphene fluoride is well described by variable-range hopping in two dimensions due to the presence of localized states in the band gap. Graphene obtained through the reduction of graphene fluoride is highly conductive, exhibiting a resistivity of less than 100 kΩ\Omega at room temperature. Our approach provides a new path to reversibly engineer the band structure and conductivity of graphene for electronic and optical applications.Comment: 7 pages, 5 figures, revtex, to appear in PR

    Theory of single-photon transport in a single-mode waveguide coupled to a cavity containing a two-level atom

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    The single-photon transport in a single-mode waveguide, coupled to a cavity embedded with a two-leval atom is analyzed. The single-photon transmission and reflection amplitudes, as well as the cavity and the atom excitation amplitudes, are solved exactly via a real-space approach. It is shown that the dissipation of the cavity and of the atom respectively affects distinctively on the transport properties of the photons, and on the relative phase between the excitation amplitudes of the cavity mode and the atom.Comment: 28 pages, 6 figures. Accepted by Physical Review A (2009

    Drastic effects of damping mechanisms on the third-order optical nonlinearity

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    We have investigated the optical response of superradiant atoms, which undergoes three different damping mechanisms: radiative dissipation (γr\gamma_r), dephasing (γd\gamma_d), and nonradiative dissipation (γn\gamma_n). Whereas the roles of γd\gamma_d and γn\gamma_n are equivalent in the linear susceptibility, the third-order nonlinear susceptibility drastically depends on the ratio of γd\gamma_d and γn\gamma_n: When γdγn\gamma_d \ll \gamma_n, the third-order susceptibility is essentially that of a single atom. Contrarily, in the opposite case of γdγn\gamma_d \gg \gamma_n, the third-order susceptibility suffers the size-enhancement effect and becomes proportional to the system size.Comment: 5pages, 2figure

    Ultra-broadband wavelength-swept Tm-doped fiber laser using wavelength-combined gain stages

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    A wavelength-swept thulium-doped fiber laser system employing two parallel cavities with two different fiber gain stages is reported. The fiber gain stages were tailored to provide emission in complementary bands with external wavelength-dependent feedback cavities sharing a common rotating polygon mirror for wavelength scanning. The wavelength-swept laser outputs from the fiber gain elements were spectrally combined by means of a dichroic mirror and yielded over 500 mW of output with a scanning range from ~1740 nm to ~2070 nm for a scanning frequency of ~340 Hz

    Novel Approaches towards Highly Selective Self-Powered Gas Sensors

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    The prevailing design approaches of semiconductor gas sensors struggle to overcome most of their current limitations such as poor selectivity, and high power consumption. Herein, a new sensing concept based on devices that are capable of detecting gases without the need of any external power sources required to activate interaction of gases with sensor or to generate the sensor read out signal. Based on the integration of complementary functionalities (namely; powering and sensing) in a singular nanostructure, self-sustained gas sensors will be demonstrated. Moreover, a rational methodology to design organic surface functionalization that provide high selectivity towards single gas species will also be discussed. Specifically, theoretical results, confirmed experimentally, indicate that precisely tuning of the sterical and electronic structure of sensor material/organic interfaces can lead to unprecedented selectivity values, comparable to those typical of bioselective processes. Finally, an integrated gas sensor that combine both the self-powering and selective detection strategies in one single device will also be presented. © 2015 Published by Elsevier Ltd.Peer ReviewedPostprint (published version

    Bilayer Splitting in the Electronic Structure of Heavily Overdoped Bi2Sr2CaCu2O8+d

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    The electronic structure of heavily overdoped Bi2_2Sr2_2CaCu2_2O8+δ_{8+\delta} is investigated by angle-resolved photoemission spectroscopy. The long-sought bilayer band splitting in this two-plane system is observed in both normal and superconducting states, which qualitatively agrees with the bilayer Hubbard model calculations. The maximum bilayer energy splitting is about 88 meV for the normal state feature, while it is only about 20 meV for the superconducting peak. This anomalous behavior cannot be reconciled with the quasiparticle picture.Comment: 4 pages, 4 figures, submitted to Phys. Rev. Let

    Wavelength-swept Tm-doped fiber laser operating in the two-micron wavelength band

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    A wavelength-swept thulium-doped silica fiber laser using an intracavity rotating slotted-disk wavelength scanning filter in combination with an intracavity solid etalon for passive control of temporal and spectral profiles is reported. The laser yielded a wavelength swept output in a step-wise fashion with each laser pulse separated from the previous pulse by a frequency interval equal to the free-spectral-range of the etalon and with an instantaneous linewidth of <0.05 nm. Scanning ranges from 1905 nm to 2049 nm for a cladding-pumping laser configuration, and from 1768 nm to 1956 nm for a core-pumping laser configuration were achieved at average output powers up to ~1 W

    Coupling Of The B1g Phonon To The Anti-Nodal Electronic States of Bi2Sr2Ca0.92Y0.08Cu2O(8+delta)

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    Angle-resolved photoemission spectroscopy (ARPES) on optimally doped Bi2Sr2Ca0.92Y0.08Cu2O(8+delta) uncovers a coupling of the electronic bands to a 40 meV mode in an extended k-space region away from the nodal direction, leading to a new interpretation of the strong renormalization of the electronic structure seen in Bi2212. Phenomenological agreements with neutron and Raman experiments suggest that this mode is the B1g oxygen bond-buckling phonon. A theoretical calculation based on this assignment reproduces the electronic renormalization seen in the data.Comment: 4 Pages, 4 Figures Updated Figures and Tex
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