Analytic Solution for the Ground State Energy of the Extensive Many-Body Problem

A closed form expression for the ground state energy density of the general extensive many-body problem is given in terms of the Lanczos tri-diagonal form of the Hamiltonian. Given the general expressions of the diagonal and off-diagonal elements of the Hamiltonian Lanczos matrix, $\alpha_n(N)$ and $\beta_n(N)$, asymptotic forms $\alpha(z)$ and $\beta(z)$ can be defined in terms of a new parameter $z\equiv n/N$ ($n$ is the Lanczos iteration and $N$ is the size of the system). By application of theorems on the zeros of orthogonal polynomials we find the ground-state energy density in the bulk limit to be given in general by ${\cal E}_0 = {\rm inf}\,\left[\alpha(z) - 2\,\beta(z)\right]$.Comment: 10 pages REVTex3.0, 3 PS figure

Scheme for direct measurement of a general two-qubit Hamiltonian

The construction of two-qubit gates appropriate for universal quantum computation is of enormous importance to quantum information processing. Building such gates is dependent on accurate knowledge of the interaction dynamics between two qubit systems. This letter will present a systematic method for reconstructing the full two-qubit interaction Hamiltonian through experimental measures of concurrence. This not only gives a convenient method for constructing two qubit quantum gates, but can also be used to experimentally determine various Hamiltonian parameters in physical systems. We show explicitly how this method can be employed to determine the first and second order spin-orbit corrections to the exchange coupling in quantum dots.Comment: 4 Pages, 1 Figur

Sensing of Fluctuating Nanoscale Magnetic Fields Using NV Centres in Diamond

New magnetometry techniques based on Nitrogen-Vacancy (NV) defects in diamond allow for the imaging of static (DC) and oscillatory (AC) nanoscopic magnetic systems. However, these techniques require accurate knowledge and control of the sample dynamics, and are thus limited in their ability to image fields arising from rapidly fluctuating (FC) environments. We show here that FC fields place restrictions on the DC field sensitivity of an NV qubit magnetometer, and that by probing the dephasing rate of the qubit in a magnetic FC environment, we are able to measure fluctuation rates and RMS field strengths that would be otherwise inaccessible with the use of DC and AC magnetometry techniques. FC sensitivities are shown to be comparable to those of AC fields, whilst requiring no additional experimental overheads or control over the sample.Comment: 5 pages, 4 figure

Single atom-scale diamond defect allows large Aharonov-Casher phase

We propose an experiment that would produce and measure a large Aharonov-Casher (A-C) phase in a solid-state system under macroscopic motion. A diamond crystal is mounted on a spinning disk in the presence of a uniform electric field. Internal magnetic states of a single NV defect, replacing interferometer trajectories, are coherently controlled by microwave pulses. The A-C phase shift is manifested as a relative phase, of up to 17 radians, between components of a superposition of magnetic substates, which is two orders of magnitude larger than that measured in any other atom-scale quantum system.Comment: 5 pages, 2 figure

Subspace confinement : how good is your qubit?

The basic operating element of standard quantum computation is the qubit, an isolated two-level system that can be accurately controlled, initialized and measured. However, the majority of proposed physical architectures for quantum computation are built from systems that contain much more complicated Hilbert space structures. Hence, defining a qubit requires the identification of an appropriate controllable two-dimensional sub-system. This prompts the obvious question of how well a qubit, thus defined, is confined to this subspace, and whether we can experimentally quantify the potential leakage into states outside the qubit subspace. We demonstrate how subspace leakage can be characterized using minimal theoretical assumptions by examining the Fourier spectrum of the oscillation experiment

Atomistic simulations of adiabatic coherent electron transport in triple donor systems

A solid-state analogue of Stimulated Raman Adiabatic Passage can be implemented in a triple well solid-state system to coherently transport an electron across the wells with exponentially suppressed occupation in the central well at any point of time. Termed coherent tunneling adiabatic passage (CTAP), this method provides a robust way to transfer quantum information encoded in the electronic spin across a chain of quantum dots or donors. Using large scale atomistic tight-binding simulations involving over 3.5 million atoms, we verify the existence of a CTAP pathway in a realistic solid-state system: gated triple donors in silicon. Realistic gate profiles from commercial tools were combined with tight-binding methods to simulate gate control of the donor to donor tunnel barriers in the presence of cross-talk. As CTAP is an adiabatic protocol, it can be analyzed by solving the time independent problem at various stages of the pulse - justifying the use of time-independent tight-binding methods to this problem. Our results show that a three donor CTAP transfer, with inter-donor spacing of 15 nm can occur on timescales greater than 23 ps, well within experimentally accessible regimes. The method not only provides a tool to guide future CTAP experiments, but also illuminates the possibility of system engineering to enhance control and transfer times.Comment: 8 pages, 5 figure

Effects of J-gate potential and interfaces on donor exchange coupling in the Kane quantum computer architecture

We calculate the electron exchange coupling for a phosphorus donor pair in silicon perturbed by a J-gate potential and the boundary effects of the silicon host geometry. In addition to the electron-electron exchange interaction we also calculate the contact hyperfine interaction between the donor nucleus and electron as a function of the varying experimental conditions. Donor separation, depth of the P nuclei below the silicon oxide layer and J-gate voltage become decisive factors in determining the strength of both the exchange coupling and the hyperfine interaction - both crucial components for qubit operations in the Kane quantum computer. These calculations were performed using an anisotropic effective-mass Hamiltonian approach. The behaviour of the donor exchange coupling as a function of the device parameters varied provides relevant information for the experimental design of these devices.Comment: 15 pages, 15 figures. Accepted for Journal of Physics: Condensed Matte

Gate induced g-factor control and dimensional transition for donors in multi-valley semiconductors

The dependence of the g-factors of semiconductor donors on applied electric and magnetic fields is of immense importance in spin based quantum computation and in semiconductor spintronics. The donor g-factor Stark shift is sensitive to the orientation of the electric and magnetic fields and strongly influenced by the band-structure and spin-orbit interactions of the host. Using a multimillion atom tight-binding framework the spin-orbit Stark parameters are computed for donors in multi-valley semiconductors, silicon and germanium. Comparison with limited experimental data shows good agreement for a donor in silicon. Results for gate induced transition from 3D to 2D wave function confinement show that the corresponding g-factor shift in Si is experimentally observable.Comment: 4 pages, 4 figure