Using Ginkgo’s memory accessor for improving the accuracy of memory-bound low precision BLAS

The roofline model not only provides a powerful tool to relate an application\u27s performance with the specific constraints imposed by the target hardware but also offers a graphic representation of the balance between memory access cost and compute throughput. In this work, we present a strategy to break up the tight coupling between the precision format used for arithmetic operations and the storage format employed for memory operations. (At a high level, this idea is equivalent to compressing/decompressing the data in registers before/after invoking store/load memory operations.) In practice, we demonstrate that a “memory accessor” that hides the data compression behind the memory access, can virtually push the bandwidth-induced roofline, yielding higher performance for memory-bound applications using high precision arithmetic that can handle the numerical effects associated with lossy compression. We also demonstrate that memory-bound applications operating on low precision data can increase the accuracy by relying on the memory accessor to perform all arithmetic operations in high precision. In particular, we demonstrate that memory-bound BLAS operations (including the sparse matrix-vector product) can be re-engineered with the memory accessor and that the resulting accessor-enabled BLAS routines achieve lower rounding errors while delivering the same performance as the fast low precision BLAS

Process for the modification of polymers, in particular polymer nanoparticles

The present invention relates to a highly efficient and ultra fast process for the photo-initiated preparation of polymers by polymerization using photoinitiators comprising a phosphorous oxide or -sulfide group and modification of said polymers. In particular the invention relates to an ultra fast process for the photo-initiated preparation of latices comprising polymer nanoparticles by heterophase polymerization using photoinitiators comprising a phosphorous oxide or -sulfide group and their modification. In another aspect, the invention relates to polymers and polymer nanoparticles obtainable by said process

Spin-orbit coupling and phase-coherence in InAs nanowires

We investigated the magnetotransport of InAs nanowires grown by selective area metal-organic vapor phase epitaxy. In the temperature range between 0.5 and 30 K reproducible fluctuations in the conductance upon variation of the magnetic field or the back-gate voltage are observed, which are attributed to electron interference effects in small disordered conductors. From the correlation field of the magnetoconductance fluctuations the phase-coherence length l_phi is determined. At the lowest temperatures l_phi is found to be at least 300 nm, while for temperatures exceeding 2 K a monotonous decrease of l_phi with temperature is observed. A direct observation of the weak antilocalization effect indicating the presence of spin-orbit coupling is masked by the strong magnetoconductance fluctuations. However, by averaging the magnetoconductance over a range of gate voltages a clear peak in the magnetoconductance due to the weak antilocalization effect was resolved. By comparison of the experimental data to simulations based on a recursive two-dimensional Green's function approach a spin-orbit scattering length of approximately 70 nm was extracted, indicating the presence of strong spin-orbit coupling.Comment: 8 pages, 7 figure

Supercurrent in Nb/InAs-Nanowire/Nb Josephson junctions

We report on the fabrication and measurements of planar mesoscopic Josephson junctions formed by InAs nanowires coupled to superconducting Nb terminals. The use of Si-doped InAs-nanowires with different bulk carrier concentrations allowed to tune the properties of the junctions. We have studied the junction characteristics as a function of temperature, gate voltage, and magnetic field. In junctions with high doping concentrations in the nanowire Josephson supercurrent values up to 100\,nA are found. Owing to the use of Nb as superconductor the Josephson coupling persists at temperatures up to 4K. In all junctions the critical current monotonously decreased with the magnetic field, which can be explained by a recently developed theoretical model for the proximity effect in ultra-small Josephson junctions. For the low-doped Josephson junctions a control of the critical current by varying the gate voltage has been demonstrated. We have studied conductance fluctuations in nanowires coupled to superconducting and normal metal terminals. The conductance fluctuation amplitude is found to be about 6 times larger in superconducting contacted nanowires. The enhancement of the conductance fluctuations is attributed to phase-coherent Andreev reflection as well as to the large number of phase-coherent channels due to the large superconducting gap of the Nb electrodes.Comment: 5 Figure, submitted to Journal of Applied Physic