Corporate Identity Management (CIM) Model in Malaysian Higher Education Sector: Literature Review and Hypothesis Development

Corporate Identity Management (CIM) in universities has been acknowledged in marketing literature as an important area of research. Research within the current spectrum of CIM indicates some ambiguities surrounding corporate identity in higher education. However, very few studies are available in the field of corporate identity within universities. Accordingly, the objective of this study is to examine the relationships between university’s CIM and organizational performance, and also identify the relevant underlying mechanisms in Malaysian higher-education sector. Based on a review of the existing literature in a range of areas, this study proposes a conceptual model of the positive relationships between CIM activities in universities with internal brand, transformational leadership and organisational culture. The proposed conceptual model is developed based on three main theories--social identification theory, transformational leadership theory and social learning theory

Various Doping Concentration Effect on Silicon-on-Insulator (SOI) Phase Modulator

This paper reports the effect of doping concentration to the electrical characteristic performance of the phase modulator in the carrier injection mode at wavelength 1.55μm. The phase modulator device has been integrated in the silicon-on-insulator (SOI) rib waveguide with the p-i-n diode structure. The electrical device performance is predicted using the 2-D semiconductor package SILVACO (CAD) software under DC operation. The least doping concentration of p+ and n+ region produces the least change of refractive index of the modulator. Meanwhile, results show that by increasing the doping concentrations, the value of I decreases. This means that the phase modulator performance is better with increased doping concentrations

Phase modulator based on Silicon-on-Insulator (SOI) rib waveguide

This paper presents the study of electrical characteristic of phase modulator in the carrier injection mode. The phase modulator device has been integrated in the silicon-oninsulator (SOI) rib waveguide by using the p-i-n diode structure. The electrical device performance is predicted by using the 2-D semiconductor package SILVACO (CAD) software under DC operation. In summary, the phase modulator device required 0.035mA drive current to get phase shift at wavelength 1.55μm meanwhile 0.066mA drive current is required for the 1.3μm wavelength

Operation mode of phase modulation based on carrier dispersion effect in p-i-n diode of silicon rib waveguide

This paper highlights the study of the carrier injection mode and the carrier depletion mode of the phase modulator. The phase modulator device has been integrated in the silicon rib waveguide by using the p-i-n diode structure. The electrical device performance is predicted by using the 2-D semiconductor package SILVACO (CAD) software under DC operation. Summarily, the phase modulator device has less sensitivity to the effective refractive index changes when operating in reverse biased or depletion mode compared to the forward biased or injection mode

On the multiplicity of the zero-age main-sequence O star Herschel 36

We present the analysis of high-resolution optical spectroscopic observations of the zero-age main-sequence O star Herschel 36 spanning six years. This star is definitely a multiple system, with at least three components detected in its spectrum. Based on our radial-velocity (RV) study, we propose a picture of a close massive binary and a more distant companion, most probably in wide orbit about each other. The orbital solution for the binary, whose components we identify as O9 V and B0.5 V, is characterized by a period of 1.5415 +/- 0.0006 days. With a spectral type O7.5 V, the third body is the most luminous component of the system and also presents RV variations with a period close to 498 days. Some possible hypotheses to explain the variability are briefly addressed and further observations are suggested.Comment: 6 pages, 2 figure

Nanostructural and optical properties of hierarchical ZnO grown via hydrothermal method

A simple hydrothermal method was employed to synthesize 3D hierarchical ZnO nanorods deposited on Si (100) substrate at different growth temperatures (110 and 90oC) within 3 h. The structure, mode and composition of hierarchical ZnO nanorods were investigated by XRD, FESEM and EDX spectroscopy. The polycrystalline ZnO nanostructures products were indexed as hexagonal wurtzite structured, while the morphology was urchin like ZnO nanorods with different aspect ratio of nanorods and stoichiometric. The photoluminescence (PL) properties were studied of as-grown ZnO samples dependent on various growth temperatures. The PL results after UV excitation source were shown a single broad Vis emission peak for both samples with absents of UV emission peak. The emission edge of Vis peak was exhibited blue-shift due to increase temperature growth, and that suggest enhancement in hierarchical ZnO nanorods crystallinity. Oxygen deficiency is evidence on the creation various defects types in hierarchical ZnO nanorods. It is responsible on Vis emission bands. The results demonstrate promising future for the hierarchal ZnO nanostructure which could be applied in optoelectronics and gas sensing

Electro-Optical Modulator Performance in SOl

Since 1980's, silicon photonic devices have been extensively studied, however a submicrometre-size photonic devices have been realized only in the last few years. Silicon properties namely the transparency in the range of optical telecommunications wavelengths and high index of refraction, have enabled the fabrication of low loss submicron waveguide. Photonic devices such as splitter, coupler, and filter have been demonstrated in silicon but once the device has been fabricated, the properties of the device are predetermined. A silicon based modulator can be used to control the flow of light, where the refractive index of the silicon waveguide can be varied thus, induce a change in the transmission properties. This paper highlights the study of carrier injection effect on silicon waveguide with p-i-n diode structure integrated on Silicon-on-Insulator (SOl). The device performance is predicted using 2D Silvaco CAD software under different applied voltages at 1.55 �m

2x2 Optical Switch Based on Silicon-On-Insulator Microring Resonator

In near future, silicon-on-insulator (SOI) microring resonator are expected to be basic components for wavelength filtering and switching due to their compact size and wide free spectral range (FSR). In this paper, a 2X2 optical switch by using active microring resonator is proposed. The switch is consists of second order serially cascaded microring coupled to a pair of waveguide. The ON/OFF state of the design is control by electric signal which will vary the refractive index. The device is design to operate at 1.55μm wavelength. With a 500nm x 200nm rib dimensions, the design is proven to have single mode behaviour. Finite-Difference Time-Domain (FDTD) method simulation by RSOFT software is use to characterize the device performance. The results show that the 2X2 optical switch proposed can be an efficient device to be functioning in WDM application