Non-Markovian waiting time distribution

Simulation methods based on stochastic realizations of state vector evolutions are commonly used tools to solve open quantum system dynamics, both in the Markovian and non-Markovian regime. Here, we address the question of waiting time distribution (WTD) of quantum jumps for non-Markovian systems. We generalize Markovian quantum trajectory methods in the sense of deriving an exact analytical WTD for non-Markovian quantum dynamics and show explicitly how to construct this distribution for certain commonly used quantum optical systems.Comment: journal versio

Finnish CMS-TOB cosmic rack

Peer reviewe

Tailoring of motional states in double-well potentials by time-dependent processes

We show that the vibrational state tailoring method developed for molecular systems can be applied for cold atoms in optical lattices. The original method is based on a three-level model interacting with two strong laser pulses in a counterintuitive sequence [M. Rodriguez et al., Phys. Rev. A 62, 053413 (2000)]. Here we outline the conditions for achieving similar dynamics with single time-dependent potential surfaces. It is shown that guided switching between diabatic and adiabatic evolution has an essential role in this system. We also show that efficient and precise tailoring of motional states in optical lattices can be achieved, for instance, simply by superimposing two lattices and moving them with respect to each other.Comment: 9 pages, 11 figures, 25 references; accepted to PRA; v2: minor explanatory remarks added & typos correcte

Open system dynamics with non-Markovian quantum jumps

We discuss in detail how non-Markovian open system dynamics can be described in terms of quantum jumps [J. Piilo et al., Phys. Rev. Lett. 100, 180402 (2008)]. Our results demonstrate that it is possible to have a jump description contained in the physical Hilbert space of the reduced system. The developed non-Markovian quantum jump (NMQJ) approach is a generalization of the Markovian Monte Carlo Wave Function (MCWF) method into the non-Markovian regime. The method conserves both the probabilities in the density matrix and the norms of the state vectors exactly, and sheds new light on non-Markovian dynamics. The dynamics of the pure state ensemble illustrates how local-in-time master equation can describe memory effects and how the current state of the system carries information on its earlier state. Our approach solves the problem of negative jump probabilities of the Markovian MCWF method in the non-Markovian regime by defining the corresponding jump process with positive probability. The results demonstrate that in the theoretical description of non-Markovian open systems, there occurs quantum jumps which recreate seemingly lost superpositions due to the memory.Comment: 19 pages, 10 figures. V2: Published version. Discussion section shortened and some other minor changes according to the referee's suggestion

FGF8 (fibroblast growth factor 8 (androgen-induced))

Review on FGF8 (fibroblast growth factor 8 (androgen-induced)), with data on DNA, on the protein encoded, and where the gene is implicated

P-Type Silicon Strip Sensors for the new CMS Tracker at HL-LHC

Peer reviewe

Modeling the impact of defects on the charge collection efficiency of a Cadmium Telluride detector

Cadmium telluride is a favorable material for X-ray detection as it has an outstanding characteristic for room temperature operation. It is a high-Z material with excellent photon radiation absorption properties. However, CdTe single crystals may include a large number of extended crystallographic defects, such as grain boundaries, twins, and tellurium (Te) inclusions, which can have an impact on detector performance. A Technology Computer Aided Design (TCAD) local defect model has been developed to investigate the effects of local defects on charge collection efficiency (CCE). We studied a 1 mm thick Schottky-type CdTe radiation detector with transient current technique by using a red laser at room temperature. By raster scanning the detector surface we were able to study signal shaping within the bulk, and to locate surface defects by observing their impact on the CCE. In this paper we present our TCAD model with localized defect, and compare the simulation results to TCT measurements. In the model an inclusion with a diameter of 10 mu m was assumed. The center of the defect was positioned at 6 mu m distance from the surface. We show that the defect has a notable effect on current transients, which in turn affect the CCE of the CdTe detector. The simulated charge collection at the position of the defect decreases by 80 % in comparison to the defect-free case. The simulations show that the defects give a characteristic shape to TCT signal. This can further be used to detect defects in CdTe detectors and to estimate the overall defect density in the material.Peer reviewe