Realization of a single-chip, SiGe:C-based power amplifier for multi-band WiMAX applications

A fully-integrated Multi-Band PA using 0.25 μm SiGe:C process with an output power of above 25 dBm is presented. The behaviour of the amplifier has been optimized for multi-band operation covering, 2.4 GHz, 3.6 GHz and 5.4 GHz (UWB-WiMAX) frequency bands for higher 1-dB compression point and efficiency. Multi-band operation is achieved using multi-stage topology. Parasitic components of active devices are also used as matching components, in turn decreasing the number of matching component. Measurement results of the PA provided the following performance parameters: 1-dB compression point of 20.5 dBm, gain value of 23 dB and efficiency value of %7 operation for the 2.4 GHz band; 1-dB compression point of 25.5 dBm, gain value of 31.5 dB and efficiency value of %17.5 for the 3.6 GHz band; 1-dB compression point of 22.4 dBm, gain value of 24.4 dB and efficiency value of %9.5 for the 5.4 GHz band. Measurement results show that using multi-stage topologies and implementing each parasitic as part of the matching network component has provided a wider-band operation with higher output power levels, above 25 dBm, with SiGe:C process

Biosensors for cardiac biomarkers detection: a review

The cardiovascular disease (CVD) is considered as a major threat to global health. Therefore, there is a growing demand for a range of portable, rapid and low cost biosensing devices for the detection of CVD. Biosensors can play an important role in the early diagnosis of CVD without having to rely on hospital visits where expensive and time-consuming laboratory tests are recommended. Over the last decade, many biosensors have been developed to detect a wide range of cardiac marker to reduce the costs for healthcare. One of the major challenges is to find a way of predicting the risk that an individual can suffer from CVD. There has been considerable interest in finding diagnostic and prognostic biomarkers that can be detected in blood and predict CVD risk. Of these, C-reactive protein (CRP) is the best known biomarker followed by cardiac troponin I or T (cTnI/T), myoglobin, lipoprotein-associated phospholipase A(2), interlukin-6 (IL-6), interlukin-1 (IL-1), low-density lipoprotein (LDL), myeloperoxidase (MPO) and tumor necrosis factor alpha (TNF-α) has been used to predict cardiovascular events. This review provides an overview of the available biosensor platforms for the detection of various CVD markers and considerations of future prospects for the technology are addressed

A novel single-chip RF-voltage-controlled oscillator for bio-sensing applications

A novel interdigiated capacitance (IDC) based affinity biosensor system is presented that detects C-Reactive Protein (CRP), a risk marker for cardiovascular diseases, and transmit the information to a distance location wirelessly. The biosensor system consist of a voltage controlled oscillator (VCO) and an IDC. In the presence of CRP the capacitance of the IDC changes and this directly reflects to the oscillation frequency of the VCO. In the presence of 800 ng/ml antigen the frequency of the system shifts from 1.9438 GHz to 1.94175 GHz and with 64 ug/ml frequency shifts from 1.95975 GHz to 1.94875 GHz with -120 dBc/Hz phase noise

Review on carbon-derived, solid-state, micro and nano sensors for electrochemical sensing applications

The aim of this review is to summarize the most relevant contributions in the development of electrochemical sensors based on carbon materials in the recent years. There have been increasing numbers of reports on the first application of carbon derived materials for the preparation of an electrochemical sensor. These include carbon nanotubes, diamond like carbon films and diamond film-based sensors demonstrating that the particular structure of these carbon material and their unique properties make them a very attractive material for the design of electrochemical biosensors and gas sensors. Carbon nanotubes (CNT) have become one of the most extensively studied nanostructures because of their unique properties. CNT can enhance the electrochemical reactivity of important biomolecules and can promote the electron-transfer reactions of proteins (including those where the redox center is embedded deep within the glycoprotein shell). In addition to enhanced electrochemical reactivity, CNT-modified electrodes have been shown useful to be coated with biomolecules (e.g., nucleic acids) and to alleviate surface fouling effects (such as those involved in the NADH oxidation process). The remarkable sensitivity of CNT conductivity with the surface adsorbates permits the use of CNT as highly sensitive nanoscale sensors. These properties make CNT extremely attractive for a wide range of electrochemical sensors ranging from amperometric enzyme electrodes to DNA hybridization biosensors. Recently, a CNT sensor based fast diagnosis method using non-treated blood assay has been developed for specific detection of hepatitis B virus (HBV) (human liver diseases, such as chronic hepatitis, cirrhosis, and hepatocellular carcinoma caused by hepatitis B virus). The linear detection limits for HBV plasma is in the range 0.5–3.0 μL−1 and for anti- HBVs 0.035–0.242 mg/mL in a 0.1 M NH4H2PO4 electrolyte solution. These detection limits enables early detection of HBV infection in suspected serum samples. Therefore, non-treated blood serum can be directly applied for real-time sensitive detection in medical diagnosis as well as in direct in vivo monitoring. Synthetic diamond has been recognized as an extremely attractive material for both (bio-) chemical sensing and as an interface to biological systems. Synthetic diamond have outstanding electrochemical properties, superior chemical inertness and biocompatibility. Recent advances in the synthesis of highly conducting nanocrystalline-diamond thin films and nano wires have lead to an entirely new class of electrochemical biosensors and bio-inorganic interfaces. In addition, it also combines with development of new chemical approaches to covalently attach biomolecules on the diamond surface also contributed to the advancement of diamond-based biosensors. The feasibility of a capacitive field-effect EDIS (electrolyte-diamond-insulatorsemiconductor) platform for multi-parameter sensing is demonstrated with an O-terminated nanocrystalline-diamond (NCD) film as transducer material for the detection of pH and penicillin concentration. This has also been extended for the label-free electrical monitoring of adsorption and binding of charged macromolecules. One more recent study demonstrated a novel bio-sensing platform, which is introduced by combination of a) geometrically controlled DNA bonding using vertically aligned diamond nano-wires and b) the superior electrochemical sensing properties of diamond as transducer material. Diamond nanowires can be a new approach towards next generation electrochemical gene sensor platforms. This review highlights the advantages of these carbon materials to promote different electron transfer reactions specially those related to biomolecules. Different strategies have been applied for constructing carbon material-based electrochemical sensors, their analytical performance and future prospects are discussed

A high power handling capability CMOS T/R switch for x-band phased array antenna systems

This paper presents a single-pole double-throw (SPDT) transmit/receive (T/R) switch fabricated in 0.25-μm SiGe BiCMOS process for X-Band (8 – 12 GHz) phased array radar applications. The switch is based on series-shunt topology with combination of techniques to improve insertion loss (IL), isolation and power handling capability (P1dB). These techniques include optimization of transistor widths for lower insertion loss and parallel resonance technique to improve isolation. In addition, DC biasing of input and output ports, on-chip impedance transformation networks (ITN) and resistive body-floating are used to improve P1dB of the switch. All these design techniques resulted in a measured IL of 3.6 dB, isolation of 30.8 dB and P1dB of 28.2 dBm at 10 GHz. The return losses at both input and output ports are better than 16 dB from 8 to 12 GHz. To our knowledge, this work presents the highest P1dB at X-Band compared to other reported single-ended CMOS T/R switches in the literature

A 4.5-5.8 GHz Differential LC VCO using 0.35 m SiGe BiCMOS Technology

In this paper, design and realization of a 4.5-5.8 GHz, Gm LC voltage controlled oscillator (VCO) for IEEE 802.11a standard is presented. The circuit is implemented with 0.35´m SiGe BiCMOS process that includes high-speed SiGe Heterojunction Bipolar Transistors (HBTs). A linear, 1300 MHz tuning range is measured with accumulation-mode varactors. Fundamental frequency output power changes between -1.6 dBm and 0.9 dBm, depending on the tuning voltage. The circuit draws 17 mA from 3.3 V supply, including buffer circuits leading to a total power dissipation of 56 mW. Post-layout phase noise is simulated -110.7 dBc/Hz at 1MHz offset from 5.8 GHz carrier frequency and -113.4 dBc/Hz from 4.5 GHz carrier frequency. Phase noise measurements will be updated in the final manuscript. The circuit occupies an area of 0.6 mm2 on Si substrate including RF and DC pads

A new resonant circuit for 2.45 GHz LC VCO with linear frequency tuning

A new MOS varactor bank is proposed to implement a 2.45 GHz SiGe BiCMOS LC-tank voltage controlled oscillator (VCO) with linear frequency tuning. Compared to a conventional VCO, the proposed technique improves the quality factor of the LC-tank while preserving the linearity of the circuit. Realized in 0.25-μm SiGe BiCMOS technology, VCO exhibits 35% VCO gain (KVCO) variation from 2.29 to 2.66 GHz with a 16% tuning ratio. The VCO also exhibits a phase noise of -113 dBc/Hz at 1 MHz offset frequency and consumes 1.7 mA from 1.8 V supply

On the inherent self-interference suppression of full-duplex phased arrays

This paper quantitatively investigates the inherent self-interference (SI) suppression property of dual-polarized fullduplex (FD) linear phased array antennas. The amount of systemic SI suppression is derived for an N×1 array as a function of the phase taper applied on it. The systemic SI suppression occurs due to the destructive interference of signals in different phased array channels. Results indicate more than 10-15 dB SI suppression for most beam directions, and around 2 dB SI suppression for the normal beam direction

Design of a ROIC for scanning type HgCdTe LWIR focal plane arrays

Design of a silicon readout integrated circuit (ROIC) for LWIR HgCdTe Focal Plane is presented. ROIC incorporates time delay integration (TDI) functionality over seven elements with a supersampling rate of three, increasing SNR and the spatial resolution. Novelty of this topology is inside TDI stage; integration of charges in TDI stage implemented in current domain by using switched current structures that reduces required area for chip and improves linearity performance. ROIC, in terms of functionality, is capable of bidirectional scan, programmable integration time and 5 gain settings at the input. Programming can be done parallel or serially with digital interface. ROIC can handle up to 3.5V dynamic range with the input stage to be direct injection (DI) type. With the load being 10pF capacitive in parallel with 1MΩ resistance, output settling time is less than 250nsec enabling the clock frequency up to 4MHz. The manufacturing technology is 0.35μm, double poly-Si, four-metal (3 metals and 1 top metal) 5V CMOS process