Deterministic Transformations of Multipartite Entangled States with Tensor Rank 2

Transformations involving only local operations assisted with classical communication are investigated for multipartite entangled pure states having tensor rank 2. All necessary and sufficient conditions for the possibility of deterministically converting truly multipartite, rank-2 states into each other are given. Furthermore, a chain of local operations that successfully achieves the transformation has been identified for all allowed transformations. The identified chains have two nice features: (1) each party needs to carry out at most one local operation and (2) all of these local operations are also deterministic transformations by themselves. Finally, it is found that there are disjoint classes of states, all of which can be identified by a single real parameter, which remain invariant under deterministic transformations.Comment: 27 pages, 1 figure; added new references and improved the presentatio

collected from South and South-eastern regions of Turkey

A total of 45 lizards (Acanthodactylus harranensis [n = 15], Acanthodacthylus schreiberi [n = 9] and Mesalina brevirostris [n = 21]) were collected from South and Southeastern Regions of Turkey and examined for helminth fauna. Acanthodactylus harranensis harbored 1 species of Nematoda (Skrjabinodon sp.), 1 species of Cestoda (Oochoristica tuberculata) and 1 species of Acanthocephala (Centrorhynchus sp. [cystacanth]). Acanthodactylus schreiberi harbored unidentified cysticercoids. Mesalina brevirostris harbored 1 species of Nematoda (Spauligodon saxicolae). All lizards represents new host records for the helminths reported in this study

EVALUATION OF APPARENT DIGESTIBILITY COEFFICIENTS OF DIFFERENT DIETARY PROTEIN LEVELS WITH AND WITHOUT FISH MEAL FOR LABEO ROHITA

The apparent digestibility coefficients of three protein levels of reference diets (without fish meal) and test diets (with fish meal) were estimated for Labeo rohita. Three test diets (test diet-I, test diet-II and test diet-III) and three reference diets (reference diet-I, reference diet-II and reference diet-III) having 28, 30 and 32% protein levels were prepared. Chromic oxide was used as an internal marker in the experimental diets for the evaluation of digestibility of protein levels. The differences in apparent digestibility for dry matter, crude protein, crude fat and gross energy of reference and test diets were highly significant (P<0.01). The apparent digestibility coefficients (ADCs) of dry matter were 32.10 ± 0.30 and 35.30 ± 0.30% for reference and test diets -III. The ADCs of crude protein and crude fat were 77.92 ± 0.10, 69.23 ± 0.06 and 75.77 ± 0.05, 70.40 ± 0.22% for reference and test diets-III, respectively. The values of ADCs of gross energy were maximum for reference diet-III (52.28 ± 0.25%) and test diet-III (48.65 ± 0.78%). The ADCs of dry matter were 19.80 ± 1.40 and 18.15 ± 0.05% for reference and test diet-I. The ADCs of crude protein and crude fat were 73.93 ± 0.05, 68.43 ± 1.58 and 59.49 ± 1.13, 57.02 ± 2.42% for reference and test diet-I respectively. The ADCs values of gross energy were for reference diet-I (42.43 ± 0.36%) and test diet-I (39.09 ± 1.35%). The better ADCs for dry matter, crude protein, crude fat and gross energy were at 32% protein level

Polarization Relaxation Induced by Depolarization Field in Ultrathin Ferroelectric BaTiO3_3 Capacitors

Time-dependent polarization relaxation behaviors induced by a depolarization field $E_{d}$ were investigated on high-quality ultrathin SrRuO$_{3}$/BaTiO$_{3}$/SrRuO$_{3}$ capacitors. The $E_d$ values were determined experimentally from an applied external field to stop the net polarization relaxation. These values agree with those from the electrostatic calculations, demonstrating that a large $E_{d}$ inside the ultrathin ferroelectric layer could cause severe polarization relaxation. For numerous ferroelectric devices of capacitor configuration, this effect will set a stricter size limit than the critical thickness issue

Gelatin-Sealed Dacron Graft is not more Susceptible to MRSA Infection than PTFE Graft

ObjectivesThe purpose of this experimental study was to compare the susceptibility of gelatin-sealed Dacron and PTFE prostheses to infection by MRSA.DesignProspective, randomized, controlled animal study.Materials and MethodsGraft infections were established in the subcutaneous tissues of 60 female Spraque-Dawley rats by the implantation of gelatin-sealed Dacron or PTFE prostheses followed by topical inoculation with methicillin-resistant Staphylococcus aureus. The study groups were as follows: (1A) uncontaminated gelatin-sealed Dacron group, (1B) untreated contaminated gelatin-sealed Dacron group, (1C) contaminated gelatin-sealed Dacron group with intraperitoneal teicoplanin treatment, (2A) uncontaminated PTFE group, (2B) untreated contaminated PTFE group, and (2C) contaminated PTFE group with intraperitoneal teicoplanin treatment. The grafts were removed after 7 days and evaluated for infection by counting the number of adherent bacteria on the graft material after rinsing and sonication. The perigraft tissue was harvested for histopathological study. To investigate the existence of any infection, blood samples were collected by cardiopuncture for a culture analysis.ResultsNo significant difference in bacteria counts was observed between gelatin-sealed Dacron and PTFE grafts. In groups 1A and 2A, there was no infection detected. The bacterial counts for MRSA were 7.4×105 in group 1B and 8.6×105 in group 2B. There was also no infection in groups 1C and 2C. While the difference between group 1B and 2B was not significant (p>.05), bacterial counts in group 1B or 2B were significantly higher than those in other groups. Blood cultures were only positive in four rats in group 1B and in two rats in group 2B. The severities of the inflammation of the perigraft tissues was low in groups 1A and 2A, high in groups 1C and 2C, and between the range from low to moderate in groups 1B and 2B.ConclusionThe susceptibility of gelatin-sealed Dacron to bacterial infection was not higher than that of PTFE

Cognitive Style as a Factor in Accounting Students\u27 Performance on Multiple Choice Examinations

Using 59 final year accounting students as subjects and multiple regression analysis, this paper tests the hypothesis that accounting students\u27 performance on multiple choice examinations is related to field dependence cognitive style. Results support the hypothesis and suggest that in evaluating student performances in multiple choice examinations, accounting academics should bear in mind that the scores on these examinations may be partly a function of students\u27 cognitive style. This finding has implications for the use of multiple choice examinations in classroom evaluations

Activated and Metallic Conduction in p-DType Modulation-Doped Ge-Sn Devices

Ge_{1-x}Sn_{x} quantum wells can be incorporated into Si-Ge-based structures with low-carrier effective masses, high mobilities, and the possibility of direct band-gap devices with x ∼ 0.1. However, the electrical properties of p-type Ge_{1-x} Sn_{x} devices are dominated by a thermally activated mobility and metallic behavior. At 30 mK the transport measurements indicate localization with a mobility of 380 cm^{2}/Vs, which is thermally activated with a temperature-independent carrier density of 4x 10^{11} cm^{-2}. This weakly disordered system with conductivity, sigma ~ epsilon^{2}/h, where e is the fundamental charge and h is Planck’s constant, is a result of negatively charged “Sn-vacancy” complex states in the barrier layers that act as hole traps. A measured hole effective mass of 0.090±0.005m_{e} from the Shubnikov-de Haas effect, where m_{e} is the free electron mass shows that the valence band is heavy hole dominated and is similar to p-type Ge with the compressive strain playing the role of quenching the spin-orbit coupling and shifting the unoccupied light-hole states to higher hole energies. The Ge_{1-x} Sn_{x} devices have a high quantum mobility of approximately 36 000 cm^{2}/Vs that is not thermally activated. The ratio of transport-to-quantum mobility of approximately 0.01 in Ge_{1-x} Sn_{x} devices is unusual and points to several competing scattering mechanisms in the different experimental regimes

Spin Dependent Transport in Semiconductor Nanostructures

This project investigates transport properties of electrons and holes con- fined into one-dimensional regions using lithographically patterned surface gates in In0.75Ga0.25As and p-type Ge quantum wells respectively. A series of transport experiments was conducted to investigate many body effects in electrons and holes in one dimension. The experimental results provided here show important advances in both In0.75Ga0.25As and p-type Ge quan- tum wires and lays the ground work for future experiments for spintronics research using these materials. The first experiments reported here (chapter 4) describes the experiments carried out to optimise fabrication methods and determine the ideal length scales of split gates to observe clear ballistic transport features in high mobility In0.75Ga0.25As wafers. The following chapter (chapter 5) summarises the one dimensional trans- port measurements carried out on narrow split gates fabricated on the high mobility In0.75 Ga0.25 As quantum wells. It explores how Rashba spin or- bit coupling effects the transport properties. In In0.75Ga0.25As a weaker backscattering due to the time-reversal asymmetry in the one-dimensional channel results in enhanced ballistic transport characteristics with clear quantised conductance plateaus up to 6(2e2/h). We investigate the con- ductance data when a d.c. voltage is applied to the source and the drain contacts and a method for obtaining the effective g factor is described. Chapter 6 introduces p-type Ge, and summarises one dimensional transport properties of these devices. We demonstrate quantised conductance up to 10 (2e2/h). Applied source-drain voltages and symmetric gating of the channel has uncovered plateau at half integer values as well as ballistic structure down to 0.25(2e2/h). These systems also show a ballistic plateau at 0.25 (2e2/h), when the carrier density is reduced using a top gate electrode. The last experimental chapter (chapter 7) analyses the many-body effects observed in one-dimensional transport measurements in p-Ge and analysis of anomalous 0.25 (2e2/h) plateau is provided with possible explanations for it. We have also shown that we can alter the confining potential using lateral gate voltages to create a row formation as the ground state effectively creates a Wigner lattice