65 research outputs found
Magnetization in AIIIBV semiconductor heterostructures with the depletion layer of manganese
The magnetic moment and magnetization in GaAs/GaInAs/GaAs
heterostructures with Mn deluted in GaAs cover layers and with atomically
controlled Mn -layer thicknesses near GaInAs-quantum well (3 nm)
in temperature range T=(1.8-300)K in magnetic field up to 50 kOe have been
investigated. The mass magnetization all of the samples of
GaAs/GaInAs/GaAs with Mn increases with the increasing of the
magnetic field that pointed out on the presence of low-dimensional
ferromagnetism in the manganese depletion layer of GaAs based structures. It
has been estimated the manganese content threshold at which the ferromagnetic
ordering was found.Comment: 8 pages, 3 figure
Voltage and temperature dependence of the grain boundary tunneling magnetoresistance in manganites
We have performed a systematic analysis of the voltage and temperature
dependence of the tunneling magnetoresistance (TMR) of grain boundaries (GB) in
the manganites. We find a strong decrease of the TMR with increasing voltage
and temperature. The decrease of the TMR with increasing voltage scales with an
increase of the inelastic tunneling current due to multi-step inelastic
tunneling via localized defect states in the tunneling barrier. This behavior
can be described within a three-current model for magnetic tunnel junctions
that extends the two-current Julliere model by adding an inelastic,
spin-independent tunneling contribution. Our analysis gives strong evidence
that the observed drastic decrease of the GB-TMR in manganites is caused by an
imperfect tunneling barrier.Comment: to be published in Europhys. Lett., 8 pages, 4 figures (included
Magnetic order in double-layer manganites (La(1-z)Pr(z))1.2Sr1.8Mn2O7: intrinsic properties and role of the intergrowths
We report on an investigation of the double-layer manganite series
(La(1-z)Pr(z))1.2Sr1.8Mn2O7 (0 <= z <= 1), carried out on single crystals by
means of both macroscopic magnetometry and local probes of magnetism (muSR,
55Mn NMR). Muons and NMR demonstrate an antiferromagnetically ordered ground
state at non-ferromagnetic compositions (z >= 0.6), while more moderate Pr
substitutions (0.2 <= z <= 0.4) induce a spin reorientation transition within
the ferromagnetic phase.
A large magnetic susceptibility is detected at {Tc,TN} < T < 250K at all
compositions. From 55Mn NMR spectroscopy, such a response is unambiguously
assigned to the intergrowth of a ferromagnetic pseudocubic phase
(La(1-z)Pr(z))(1-x)Sr(x)MnO3, with an overall volume fraction estimated as
0.5-0.7% from magnetometry. Evidence is provided for the coupling of the
magnetic moments of these inclusions with the magnetic moments of the
surrounding (La(1-z)Pr(z))1.2Sr1.8Mn2O7 phase, as in the case of finely
dispersed impurities. We argue that the ubiquitous intergrowth phase may play a
role in the marked first-order character of the magnetic transition and the
metamagnetic properties above Tc reported for double-layer manganites.Comment: 11 pages, 9 figures. Submitted to Phys. Rev.
Magnetization in AIIIBV semiconductor heterostructures with the depletion layer of manganese
The magnetic moment and magnetization in GaAs/Ga₀.₈₄In₀.₁₆As/GaAs heterostructures with Mn deluted in GaAs cover layers and with atomically controlled Mn δ-layer thicknesses near GaInAs-quantum well (~3 nm) in temperature range T = 1.8–300 K in magnetic field up to 50 kOe have been investigated. The mass magnetization all of the samples of GaAs/Ga₀.₈₄In₀.₁₆As/GaAs with Mn increases with the increasing of the magnetic field that pointed out on the presence of low-dimensional ferromagnetism in the manganese depletion layer of GaAs based structures. It has been estimated the manganese content threshold at which the ferromagnetic ordering was found
Low frequency 1/f noise in doped manganite grain-boundary junctions
We have performed a systematic analysis of the low frequency 1/f-noise in
single grain boundary junctions in the colossal magnetoresistance material
La_{2/3}Ca_{1/3}MnO_{3-delta}. The grain boundary junctions were formed in
epitaxial La_{2/3}Ca_{1/3}MnO_{3-delta} films deposited on SrTiO_3 bicrystal
substrates and show a large tunneling magnetoresistance of up to 300% at 4.2 K
as well as ideal, rectangular shaped resistance versus applied magnetic field
curves. Below the Curie temperature T_C the measured 1/f noise is dominated by
the grain boundary. The dependence of the noise on bias current, temperature
and applied magnetic field gives clear evidence that the large amount of low
frequency noise is caused by localized sites with fluctuating magnetic moments
in a heavily disordered grain boundary region. At 4.2 K additional temporally
unstable Lorentzian components show up in the noise spectra that are most
likely caused by fluctuating clusters of interacting magnetic moments. Noise
due to fluctuating domains in the junction electrodes is found to play no
significant role.Comment: 9 pages, 7 figure
Impact of liquid metal surface on plasma-surface interaction in experiments with lithium and tin capillary porous systems
The lithium and tin capillary-porous systems (CPSs) were tested with steady-state plasma in the PLM plasma device which is the divertor simulator with plasma parameters relevant to divertor and SOL plasma of tokamaks. The CPS consists of tin/lithium tile fixed between two molybdenum meshs constructed in the module faced to plasma. Steady-state plasma load of 0.1 - 1 MW/m(2) on the CPS during more than 200 min was achieved in experiments on PLM which is a modeling far scrapeoff- layer and far zone of divertor plasma of a large tokamak. The heating of the CPS was controlled remotely including biasing technique which allows to regulate evaporated metal influx to plasma. After exposure, the materials of the tin and lithium CPSs were inspected and analyzed with optic and scanning electron micriscopy. Experiments have demonstrated sustainability of the tin and lithium CPSs to the high heat steady state plasma load expected in a large scale tokamak. The effect of evaporated lithium and tin on the plasma transport/radiation was studied with spectroscopy to evaluate changes of plasma properties and plasma-surface interaction
Study of the stochastic clustering on the refractory material surface under the effect of plasma load in the PLM device
Tungsten plates were tested in stationary helium discharges in the PLM device. The duration of discharges in the PLM reached 200 minutes. A distinctive feature of this device is the stationary plasma confinement, which is advantageous for testing fusion materials, including materials of the divertor and first wall of a fusion reactor. During plasma irradiation in the PLM, the thermal load on the surface of the tested plates was more than 1 MW/m(2). The temperature of the tested plates amounted to 1000 degrees C and more. Stochastic nanostructures with dimensions of the structural elements of less than 50 nm, including fuzz-type structures, were observed on the processed surfaces of the samples
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