Schottky-Contact Formation between Metal Electrodes and Molecularly Doped Disordered Organic Semiconductors

We study using three-dimensional kinetic Monte Carlo (KMC) simulations to what extent the formation of Schottky contacts between a metal electrode and a molecularly doped disordered organic semiconductor can be understood from the theory for crystalline inorganic semiconductors, adapted to include the effects of the localized nature of the states in which the charge carriers reside and the hopping transport in between these states. The thickness of the Schottky-contact depletion region is found to be significantly smaller than as expected when the energetical disorder is neglected. The presence of energetic disorder is also found to influence the voltage dependence of the width of the depletion regions near the contacts of single-layer double-Schottky-contact devices. The voltage drop over the two depletion regions and the remaining charge-neutral bulk layer is shown to be described successfully by a semianalytical model, based on an accurately parameterized bulk mobility function of the dopant concentration, energetic disorder, and the electric field. We furthermore find that the mobility in the depletion regions is drastically reduced. As a result, the depletion-region formation process can be ultraslow, with a characteristic time scale ranging from microseconds to beyond milliseconds.</p

Doping and Density of States Engineering for Organic Thermoelectrics

Thermoelectric materials can turn temperature differences directly into electricity. To use this to harvest e.g. waste heat with an efficiency that approaches the Carnot efficiency requires a figure of merit ZT larger than 1. Compared with their inorganic counterparts, organic thermoelectrics (OTE) have numerous advantages, such as low cost, large-area compatibility, flexibility, material abundance and an inherently low thermal conductivity. Therefore, organic thermoelectrics are considered by many to be a promising candidate material system to be used in lower cost and higher efficiency thermoelectric energy conversion, despite record ZT values for OTE currently lying around 0.25. A complete organic thermoelectric generator (TEG) normally needs both p-type and n-type materials to form its electric circuit. Molecular doping is an effective way to achieve p- and ntype materials using different dopants, and it is necessary to fundamentally understand the doping mechanism. We developed a simple yet quantitative analytical model and compare it with numerical kinetic Monte Carlo simulations to reveal the nature of the doping effect. The results show the formation of a deep tail in the Gaussian density of states (DOS) resulting from the Coulomb potentials of ionized dopants. It is this deep trap tail that negatively influences the charge carrier mobility with increasing doping concentration. The trends in mobilities and conductivities observed from experiments are in good agreement with the modeling results, for a large range of materials and doping concentrations. Having a high power factor PF is necessary for efficient TEG. We demonstrate that the doping method can heavily impact the thermoelectric properties of OTE. In comparison to conventional bulk doping, sequential doping can achieve higher conductivity by preserving the morphology, such that the power factor can improve over 100 times. To achieve TEG with high output power, not only a high PF is needed, but also having a significant active layer thickness is very important. We demonstrate a simple way to fabricate multi-layer devices by sequential doping without significantly sacrificing PF. In addition to the application discussed above, harvesting large amounts of heat at maximum efficiency, organic thermoelectrics may also find use in low-power applications like autonomous sensors where voltage is more important than power. A large output voltage requires a high Seebeck coefficient. We demonstrate that density of states (DOS) engineering is an effective tool to increase the Seebeck coefficient by tailoring the positions of the Fermi energy and the transport energy in n- and p-type doped blends of conjugated polymers and small molecules. In general, morphology heavily impacts the performance of organic electronic devices based on mixtures of two (or more) materials, and organic thermoelectrics are no exception. We experimentally find that the charge and energy transport is distinctly different in well-mixed and phase separated morphologies, which we interpreted in terms of a variable range hopping model. The experimentally observed trends in conductivity and Seebeck coefficient are reproduced by kinetic Monte Carlo simulations in which the morphology is accounted for.

Conjugated Polymer Blends for Organic Thermoelectrics

A major attraction of organic conjugated semiconductors is that materials with new, emergent functionality can be designed and made by simple blending, as is extensively used in, e.g., bulk heterojunction organic solar cells. Herein doped blends based on organic semiconductors (OSCs) for thermoelectric applications are critically reviewed. Several experimental strategies to improve thermoelectric performance, measured in terms of power factor (PF) or figure-of-merit ZT, have been demonstrated in recent literature. Specifically, density-of-states design in blends of two OSCs can be used to obtain electronic Seebeck coefficients up to approximate to 2000 mu V K-1. Alternatively, blending with (high-dielectric constant) insulating polymers can improve doping efficiency and thereby conductivity, as well as induce more favorable morphologies that improve conductivity while hardly affecting thermopower. In the PEDOT:polystyrene-sulfonate (PEDOT:PSS) blend system, processing schemes to either improve conductivity via morphology or via (partial) removal of the electronically isolating PSS, or both, have been demonstrated. Although a range of experiments have at least quasi-quantitatively been explained by analytical or numerical models, a comprehensive model for organic thermoelectrics is lacking so far

High thermoelectric power factor from multilayer solution-processed organic films

We investigate the suitability of the "sequential doping" method of organic semiconductors for thermoelectric applications. The method consists of depositing a dopant (F4TCNQ) containing solution on a previously cast semiconductor (P3HT) thin film to achieve high conductivity, while preserving the morphology. For very thin films (similar to 25 nm), we achieve a high power factor around 8 mu W/mK(-2) with a conductivity over 500 S/m. For the increasing film thickness, conductivity and power factor show a decreasing trend, which we attribute to the inability to dope the deeper parts of the film. Since thick films are required to extract significant power from thermoelectric generators, we developed a simple additive technique that allows the deposition of an arbitrary number of layers without significant loss in conductivity or power factor that, for 5 subsequent layers, remain at similar to 300 S/m and similar to 5 mu W/mK(-2), respectively, whereas the power output increases almost one order of magnitude as compared to a single layer. The efficient doping in multilayers is further confirmed by an increased intensity of (bi)polaronic features in the UV-Vis spectra. Published by AIP Publishing.Funding Agencies|China Scholarship Council (CSC); Knut och Alice Wallenbergs stiftelse (Project "Tail of the Sun")</p

General rule for the energy of water-induced traps in organic semiconductors

Charge carrier traps are generally highly detrimental for the performance of semiconductor devices. Unlike the situation for inorganic semiconductors, detailed knowledge about the characteristics and causes of traps in organic semiconductors is still very limited. Here, we accurately determine hole and electron trap energies for a wide range of organic semiconductors in thin-film form. We find that electron and hole trap energies follow a similar empirical rule and lie similar to 0.3-0.4 eV above the highest occupied molecular orbital and below the lowest unoccupied molecular orbital, respectively. Combining experimental and theoretical methods, the origin of the traps is shown to be a dielectric effect of water penetrating nanovoids in the organic semiconductor thin film. We also propose a solvent-annealing method to remove water-related traps from the materials investigated, irrespective of their energy levels. These findings represent a step towards the realization of trap-free organic semiconductor thin films.Funding Agencies|Chinese Scholarship Council (CSC); SeRC (Swedish e-Science Research Center)</p

Morphology Determines Conductivity and Seebeck Coefficient in Conjugated Polymer Blends

The impact of nanoscale morphology on conductivity and Seebeck coefficient in p-type doped all-polymer blend systems is investigated. For a strongly phase separated system (P3HT:PTB7), we achieve a Seebeck coefficient that peaks at S similar to 1100 mu V/K with conductivity sigma similar to 3 x 10(-3) S/cm for 90% PTB7. In marked contrast, for well-mixed systems (P3HT:PTB7 with 5% diiodooctane (DIO), P3HT:PCPDTBT), we find an almost constant S similar to 140 mu V/K and sigma similar to 1 S/cm despite the energy levels being (virtually) identical in both cases. The results are interpreted in terms of a variable range hopping (VRH) model where a peak in S and a minimum in a arise when the percolation pathway contains both host and guest sites, in which the latter acts as energetic trap. For well-mixed blends of the investigated compositions, VRH enables percolation pathways that only involve isolated guest sites, whereas the large distance between guest clusters in phase separated blends enforces (energetically unfavorable) hops via the host. The experimentally observed trends are in good agreement with the results of atomistic kinetic Monte Carlo simulations accounting for the differences in nanoscale morphology.Funding Agencies|China Scholarship Council (CSC)</p

Morphology Determines Conductivity and Seebeck Coefficient in Conjugated Polymer Blends

The impact of nanoscale morphology on conductivity and Seebeck coefficient in p-type doped all-polymer blend systems is investigated. For a strongly phase separated system (P3HT:PTB7), we achieve a Seebeck coefficient that peaks at <i>S</i> ∼ 1100 μV/K with conductivity σ ∼ 3 × 10^–3 S/cm for 90% PTB7. In marked contrast, for well-mixed systems (P3HT:PTB7 with 5% diiodooctane (DIO), P3HT:PCPDTBT), we find an almost constant <i>S</i> ∼ 140 μV/K and σ ∼ 1 S/cm despite the energy levels being (virtually) identical in both cases. The results are interpreted in terms of a variable range hopping (VRH) model where a peak in <i>S</i> and a minimum in σ arise when the percolation pathway contains both host and guest sites, in which the latter acts as energetic trap. For well-mixed blends of the investigated compositions, VRH enables percolation pathways that only involve isolated guest sites, whereas the large distance between guest clusters in phase-separated blends enforces (energetically unfavorable) hops via the host. The experimentally observed trends are in good agreement with the results of atomistic kinetic Monte Carlo simulations accounting for the differences in nanoscale morphology