341 research outputs found

    29Si Hyperfine Structure of the E'_\alpha Center in Amorphous Silicon Dioxide

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    We report a study by electron paramagnetic resonance (EPR) on the E'_\alpha point defect in amorphous silicon dioxide (a-SiO2). Our experiments were performed on gamma-ray irradiated oxygen-deficient materials and pointed out that the 29Si hyperfine structure of the E'_alpha consists in a pair of lines split by 49 mT. On the basis of the experimental results a microscopic model is proposed for the E'_alpha center, consisting in a hole trapped in an oxygen vacancy with the unpaired electron sp3 orbital pointing away from the vacancy in a back-projected configuration and interacting with an extra oxygen atom of the a-SiO2 matrix.Comment: 4 page

    Structural relaxation of E' gamma centers in amorphous silica

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    We report experimental evidence of the existence of two variants of the E' gamma centers induced in silica by gamma rays at room temperature. The two variants are distinguishable by the fine features of their line shapes in paramagnetic resonance spectra. These features suggest that the two E' gamma differ for their topology. We find a thermally induced interconversion between the centers with an activation energy of about 34 meV. Hints are also found for the existence of a structural configuration of minimum energy and of a metastable state.Comment: 4 pages, 2 figures, submitted to Phys. Rev. Let

    Luminescence of phosphorus doped silica glass

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    This work is supported by Material Science program IMIS2 of Latvia.A fiber preform with P-doped silica core is studied by luminescence methods. P-doped silica was synthesized via the SPCVD method on a substrate tube made of pure silica glass F300. Two luminescence bands were detected under excitation of the F2 excimer laser (157 nm). One band is in UV range at 4.6 eV (265 nm) with two time constants ~ 30 ns and 5 μs and the other at 3.1 eV (400 nm) with time constant ~ 5.5 ms. Fast decay of the blue band with time constant ~ 20 ns was also observed. The main excitation band of the UV luminescence is at 7.1 eV (~ 170 nm) and that for blue band is at 6.3 eV (~ 195 nm). These bands belong to two different luminescence centers, however, both are associated with the presence of phosphorus. The UV band is similar to the one observed in many different oxide materials containing phosphorus and is ascribed to PO43- complex ion. The blue band is ascribed to a twofold coordinated phosphorus. Both the blue and the UV luminescences participate in the recombination process due to electron trapping. These luminescences appear due to thermal stimulation upon recombination of liberated self-trapped holes. Other than the detected phosphorus-related oxygen-hole-centers, there is no other recombination luminescence.IMIS2; Institute of Solid State Physics, University of Latvia as the Center of Excellence has received funding from the European Union’s Horizon 2020 Framework Programme H2020-WIDESPREAD-01-2016-2017-TeamingPhase2 under grant agreement No. 739508, project CAMART

    Manipulation and Optical Detection of Colloidal Functional Plasmonic Nanostructures in Microfluidic Systems

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    The very strong optical resonances of plasmonic nanostructures can be harnessed for sensitive detection of chemical and biomolecular analytes in small volumes. Here we describe an approach towards optical biosensing in microfluidic systems using plasmonic structures (functionalized gold nanoparticles) in colloidal suspension. The plasmonic nanoparticles provide the optical signal, in the form of resonant light scattering or absorption, and the microfluidic environment provides means for selectively manipulating the nanoparticles through fluid dynamics and electric fields. In the first part we discuss recent literature on functionalized colloidal particles and the methods for handling them in microfluidic systems. Then we experimentally address aspects of nanoparticle functionalization, detection through plasmonic resonant light scattering under dark-field illumination and the electrokinetic behavior of the particles under the action of an alternating electric field

    Delocalized Nature of the E'-delta Center in Amorphous Silicon Dioxide

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    We report an experimetal study by Electron Paramagnetic Resonance (EPR) of E'-delta point defect induced by gamma ray irradiation in amorphous SiO2. We obtained an estimetion of the intensity of the 10 mT doublet characterizing the EPR spectrum of such a defect arising from hyperfine interaction of the unpaired electron with a 29Si (I=1/2) nucleus. Moreover, determining the intensity ratio between this hyperfine doublet and the main resonance line of E'-delta center, we pointed out that unpaired electron wave function of this center is actually delocalized over four nearly equivalent silicon atoms.Comment: approved for publication in Physical Review Letter

    The use of high aspect ratio photoresist (SU-8) for super-hydrophobic pattern prototyping

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    In this work we present a reliable technique for the production of large areas of high aspect-ratio patterns and describe their use as model super-hydrophobic systems. The high thickness and straight sidewalls possible with SU-8 were used to generate dense patterns of small pillars. These photoresist patterns could be used directly, without the need for micromoulding. A method is given allowing resist thickness to be varied over a wide range and a bottom antireflective layer was used to simplify patterning on reflective substrates. This patterning technique allows rapid testing of wetting theories, as pattern size and depth can be varied simply and samples can be produced in sufficient numbers for laboratory use. We show how the static contact angle of water varies with pattern height for one sample-pattern and how static and dynamic contact angles vary with dimension using high aspect-ratio patterns

    Characterization of E'delta and triplet point defects in oxygen deficient amorphous silicon dioxide

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    We report an experimental study by electron paramagnetic resonance (EPR) of gamma ray irradiation induced point defects in oxygen deficient amorphous SiO2 materials. We have found that three intrinsic (E'gamma, E'delta and triplet) and one extrinsic ([AlO4]0) paramagnetic centers are induced. All the paramagnetic defects but E'gamma center are found to reach a concentration limit value for doses above 10^3 kGy, suggesting a generation process from precursors. Isochronal thermal treatments of a sample irradiated at 10^3 kGy have shown that for T>500 K the concentrations of E'gamma and E'delta centers increase concomitantly to the decrease of [AlO4]0. This occurrence speaks for an hole transfer process from [AlO4]0 centers to diamagnetic precursors of E' centers proving the positive charge state of the thermally induced E'gamma and E'delta centers and giving insight on the origin of E'gamma from an oxygen vacancy. A comparative study of the E'delta center and of the 10 mT doublet EPR signals on three distinct materials subjected to isochronal and isothermal treatments, has shown a quite general linear correlation between these two EPR signals. This result confirms the attribution of the 10 mT doublet to the hyperfine structure of the E'delta center, originating from the interaction of the unpaired electron with a nucleus of 29Si (I=1/2). Analogies between the microwave saturation properties of E'gamma and E'delta centers and between those of their hyperfine structures are found and suggest that the unpaired electron wave function involves similar Si sp3 hybrid orbitals; specifically, for the E'delta the unpaired electron is supposed to be delocalized over four such orbitals of four equivalent Si atoms.Comment: Approved for publication in Physical Review
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