Conical refraction with generalized Bessel-Gaussian beams

It is well known that a light beam transforms into a hollow light cylinder after passing along one of the optical axes of a biaxial crystal. This optical phenomenon is known as conical refraction (CR) and fascinates researchers for almost two centuries. The characteristic features of CR find a number of practical applications in optical manipulation, polarization metrology, and singular optics to name a few [1] . However, these seem to be hindered by the lack of intuitive understanding and prediction of the CR transverse intensity pattern. This problem was partially solved by expressing the CR field as a superposition of the Bessel-Gaussian (BG) beams [2]

Conical refraction of a high-M2 laser beam

We report on experiments with conical refraction of laser beams possessing a high beam propagation parameter M2. With beam propagation parameter values M2=3 and M2=5, unusual Lloyd's distributions with correspondingly three and five dark rings were observed. In order to explain this phenomenon, we extend the dual-cone model of the conical refraction that describes it as a product of interference of two cones that converge and diverge behind the exit facet of the crystal. In the extended model, these converging/diverging cones are represented as the cone-shaped quasi-Gaussian beams possessing the M2 parameter of an original beam. In this formalism, a beam-waist of these cone-shaped beams is proportional to the M2 value and defines the area of their interference which is a width of the Lloyd's ring. Therefore, the number of dark rings in the Lloyd distribution is defined by the M2 value and can be much greater than unity. The results of the numerical simulations within the extended dual-cone model are in excellent agreement with the experiment

Efficient generation of orange light by frequency-doubling of a quantum-dot laser radiation in a PPKTP waveguide

Orange light with maximum conversion efficiency exceeding 10% and CW output power of 12.04 mW, 10.45 mW and 6.24 mW has been generated at 606, 608, and 611 nm, respectively, from a frequency-doubled InAs/GaAs quantum-dot external-cavity diode laser by use of a periodically-poled KTP waveguides with different cross-sectional areas. The wider waveguide with the cross-sectional area of 4×4 μm demonstrated better results in comparison with the narrower waveguides (3×5 μm and 2×6 μm) which corresponded to lower coupling efficiency. Additional tuning of second harmonic light (between 606 and 614 nm) with similar conversion efficiency was possible by changing the crystal temperature

Laser beams with conical refraction patterns

Laser beams with cone-refracted output from the plane mirror is demonstrated for the first time in lasers based on intracavity conical refraction (CR) phenomenon. Transverse profile of such lasers comprises a crescent ring of CR-like distribution, where any opposite points are of orthogonal linear polarizations. We confirm the existence of such mode of CR lasers by two observations. First, cascaded CR in reflection geometry has been demonstrated for first time and it provides experimental prove that a light beam passed along optic axis of a biaxial crystal, reflected back from a plane mirror and passed again through the crystal is restored. Second, CR cavity mode with CR-like pattern through the plane mirror is experimentally and theoretically demonstrated for the first time

Generation of tunable visible picosecond pulses by frequency-doubling of a quantum-dot laser in a PPKTP waveguide

We demonstrate a compact all-room-temperature picosecond laser source broadly tunable in the visible spectral region between 600 nm and 627 nm. The tunable radiation is obtained by frequency-doubling of a tunable quantum-dot external-cavity mode-locked laser in a periodically-poled KTP multimode waveguide. In this case, utilization of a significant difference in the effective refractive indices of the high- and low-order modes enables to match the period of poling in a very broad wavelength range. The maximum achieved second harmonic output peak power is 3.25 mW at 613 nm for 71.43 mW of launched pump peak power at 1226 nm, resulting in conversion efficiency of 4.55%

Di-chromatic InGaN based color tuneable monolithic LED with high color rendering index

We demonstrate a phosphor free, dichromatic GaN-based monolithic white LED with vertically stacked green and blue emitting multiple quantum wells. The optimal thickness of GaN barrier layer between green and blue quantum wells used is 8 nm. This device can be tuned over a wide range of correlated color temperature (CCT) to achieve warm white (CCT = 3600 K) to cool white (CCT = 13,000 K) emission by current modulation from 2.3 A/cm2 to 12.9 A/cm2. It is also demonstrated for the first time that a color rendering index (CRI) as high as 67 can be achieved with such a dichromatic source. The observed CCT and CRI tunability is associated with the spectral power evolution due to the pumping-induced carrier redistribution

AlGaInP red-emitting light emitting diode under extremely high pulsed pumping

Efficiency of commercial 620 nm InAlGaP Golden Dragon-cased high-power LEDs has been studied under extremely high pump current density up to 4.5 kA/cm2 and pulse duration from microsecond down to sub-nanosecond range. No efficiency decrease and negligible red shift of the emission wavelength is observed in the whole range of drive currents at nanosecond-range pulses with duty cycles well below 1%. Analysis of the pulse-duration dependence of the LED efficiency and emission spectrum suggests the active region overheating to be the major mechanism of the LED efficiency reduction at higher pumping, dominating over the electron overflow and Auger recombination

Temperature effects on optical properties and efficiency of red AlGaInP-based light emitting diodes under high current pulse pumping

In this paper, current-dependent emission spectra and efficiency measured on the same AlGaInP red light-emitting diode (LED) pumped with the current pulses of very different durations are recorded. This enabled for the first time distinguishing between high-carrier concentration and self-heating effects on the efficiency decline at high current magnitudes. The electron leakage to the p-side of the LED structure, which is the major mechanism of the efficiency reduction, is found to rise substantially when the device self-heating starts to develop. As a result, in comparison to continuous-wave excitation, driving the LED with sub-microsecond current pulses allows suppressing the device self-heating and, eventually, increasing the operating current by an order of magnitude without noticeable efficiency losses. Based on the reduced ABC-model, neglecting Auger recombination, the light extraction efficiency, injection efficiency, and internal quantum efficiency of the LED are estimated, suggesting light extraction to be the most critical factor for the overall efficiency of the LED. The coupled spectral/power LED characterization using the variable-duration current pulse pumping is found to be an effective approach for analyzing mechanisms of the device operation