'Omic approaches to preventing or managing metastatic breast cancer

Early detection of metastasis-prone breast cancers and characterization of residual metastatic cancers are important in efforts to improve management of breast cancer. Applications of genome-scale molecular analysis technologies are making these complementary approaches possible by revealing molecular features uniquely associated with metastatic disease. Assays that reveal these molecular features will facilitate development of anatomic, histological and blood-based strategies that may enable detection prior to metastatic spread. Knowledge of these features also will guide development of therapeutic strategies that can be applied when metastatic disease burden is low, thereby increasing the probability of a curative response

Search for eccentric black hole coalescences during the third observing run of LIGO and Virgo

Despite the growing number of confident binary black hole coalescences observed through gravitational waves so far, the astrophysical origin of these binaries remains uncertain. Orbital eccentricity is one of the clearest tracers of binary formation channels. Identifying binary eccentricity, however, remains challenging due to the limited availability of gravitational waveforms that include effects of eccentricity. Here, we present observational results for a waveform-independent search sensitive to eccentric black hole coalescences, covering the third observing run (O3) of the LIGO and Virgo detectors. We identified no new high-significance candidates beyond those that were already identified with searches focusing on quasi-circular binaries. We determine the sensitivity of our search to high-mass (total mass M>70 M⊙) binaries covering eccentricities up to 0.3 at 15 Hz orbital frequency, and use this to compare model predictions to search results. Assuming all detections are indeed quasi-circular, for our fiducial population model, we place an upper limit for the merger rate density of high-mass binaries with eccentricities 0<e≤0.3 at 0.33 Gpc−3 yr−1 at 90\% confidence level

Ultralight vector dark matter search using data from the KAGRA O3GK run

Among the various candidates for dark matter (DM), ultralight vector DM can be probed by laser interferometric gravitational wave detectors through the measurement of oscillating length changes in the arm cavities. In this context, KAGRA has a unique feature due to differing compositions of its mirrors, enhancing the signal of vector DM in the length change in the auxiliary channels. Here we present the result of a search for U(1)B−L gauge boson DM using the KAGRA data from auxiliary length channels during the first joint observation run together with GEO600. By applying our search pipeline, which takes into account the stochastic nature of ultralight DM, upper bounds on the coupling strength between the U(1)B−L gauge boson and ordinary matter are obtained for a range of DM masses. While our constraints are less stringent than those derived from previous experiments, this study demonstrates the applicability of our method to the lower-mass vector DM search, which is made difficult in this measurement by the short observation time compared to the auto-correlation time scale of DM

Improved breakdown voltages for type I InP/InGaAs DHBTs

We have investigated the base-collector breakdown voltage of type I InGaAs/InP DHBTs, which is shown to be dominated by band-to-band tunneling in the base-collector grade. By optimizing the grade we obtain a 20% increase in the breakdown voltage compared with traditional grades

InGaAs-InP metamorphic DHBTs grown on GaAs with lattice-matched device performance and f(T), f(max) > 268 GHz

InP-In0.53Ga0.47As-InP double heterojunction bipolar transistors (DHBTs) were grown on a GaAs substrate using a metamorphic buffer layer and then fabricated. The metamorphic buffer layer is InP--employed because of its high thermal conductivity to minimize device heating. An f(t) and f(max) of 268 and 339 GHz were measured, respectively-both records for metamorphic DHBTs. A 70-nm SiO2 dielectric sidewall was deposited on the emitter contact to permit a longer InP emitter wet etch for increased device yield and reduced base leakage current. The dc current gain beta is approximate to35 and BV,CEO = 5.7 V. The collector leakage current Icbo is 90 pA at Vcb = 0.3 V. These values of f(t), f(max), I-cbo, and beta are consistent with InP based DHBTs of the same layer structure grown on a lattice-matched InP substrate