Structural relaxations in electronically excited poly(para-phenylene)

Structural relaxations in electronically excited poly(para-phenylene) are studied using many-body perturbation theory and density-functional-theory methods. A sophisticated description of the electron-hole interaction is required to describe the energies of the excitonic states, but we show that the structural relaxations associated with exciton formation can be obtained quite accurately within a constrained density-functional-theory approach. We find that the structural relaxations in the low-energy excitonic states extend over about 8 monomers, leading to an energy reduction of 0.22 eV and a Stokes shift of 0.40 eV.Comment: 4 pages, 3 figure

Charge Transfer in Single Chains of a Donor-Acceptor Conjugated Tri-Block Copolymer.

The photophysics of a conjugated triblock copolymer comprising poly(9,9-dioctylfluorene-co-bis-N,N'-(4-methylphenyl)-bis-N,N'-phenyl-1,4-phenylenediamine) (PFM) electron donor and poly(4-(9,9-dioctyl-9H-fluoren-2-yl)benzo[c][1,2,5]-thiadiazole) (F8BT) electron acceptor blocks has been studied in solution, in films, and as single chains. While an additional long-wavelength emission apparent in neat films of the copolymer is attributed to interchain exciplex formation, no such long-wavelength emission is apparent in solution or from single molecules. However, in these cases, time-resolved fluorescence measurements indicate the presence of a delayed fluorescence. The kinetics of the delayed emission can be interpreted in terms of an equilibrium between a locally excited and a charge-transfer state at the interface of the copolymer block components. Rate constants and thermodynamic quantities associated with these processes have been evaluated. The single-molecule results allow the assignment of an intramolecular charge-transfer state in an isolated conjugated block copolymer chain.We thank the Australian Research Council (ARC) for financial support of this research through grants DP0986166, LE100100131 and LE110100161. ENH acknowledges an Australian Postgraduate Award. We acknowledge Sam Ashworth for technical assistance with data collection. NCG is grateful to the School of Chemistry, The University of Melbourne for a Wilsmore Fellowship, and to Queen’s College, Melbourne for a Sugden Fellowship.This is the accepted manuscript. The final version is available from ACS at http://pubs.acs.org/doi/abs/10.1021/jp510769p

Using Nanocavity Plasmons to Improve Solar Cell Efficiency

Although in principle very promising, photovoltaic technology has so far failed to deliver robust high efficiency modules at affordable prices. Despite considerable research, high efficiency silicon based cells remain expensive, while the more recent organic photovoltaics are still struggling with low efficiencies and short lifetimes. Meanwhile, over the last few years, the study of localized plasmons [1,2] has also received great attention due to the high field enhancements associated with confined fields , with a wide range of applications possible, from optical switches to substrates for surface enhanced Raman spectroscopy (SERS). Here we discuss how combining the structures normally used in photovoltaic devices with metallic cavities supporting localized plasmons can lead to considerable improvements in the performance of solar cells. In particular we show how by changing the shape and size of spherical voids on a metallic surface, one can tune the plasmon modes to obtain significant absorptions across the solar spectrum [3]. By coating one such nanocavity surface with a sub 100 nm-layer of semiconductor, we can create a nanostructured solar cell, where the localised Mie modes efficiently couple light into the semiconductor layer. As the plasmons electric field enhancement is largest very close to the surface, significant absorption can be maintained even when the semiconductor thickness is reduced to below the typical exciton diffusion length. In addition minority carrier transport is improved. That means we can beat the usual balance between light absorption and exciton recombination loses, and so significantly increase the overall efficiency of the photovoltaic devices. Keywords: plasmons, solar cells, nanostructured surfaces

Degradation Kinetics of Inverted Perovskite Solar Cells

We explore the degradation behaviour under continuous illumination and direct oxygen exposure of inverted unencapsulated formamidinium(FA)0.83Cs0.17Pb(I0.8Br0.2)3, CH3NH3PbI3, and CH3NH3PbI3-xClx perovskite solar cells. We continuously test the devices in-situ and in-operando with current-voltage sweeps, transient photocurrent, and transient photovoltage measurements, and find that degradation in the CH3NH3PbI3-xClx solar cells due to oxygen exposure occurs over shorter timescales than FA0.83Cs0.17Pb(I0.8Br0.2)3 mixed-cation devices. We attribute these oxygen-induced losses in the power conversion efficiencies to the formation of electron traps within the perovskite photoactive layer. Our results highlight that the formamidinium-caesium mixed-cation perovskites are much less sensitive to oxygen-induced degradation than the methylammonium-based perovskite cells, and that further improvements in perovskite solar cell stability should focus on the mitigation of trap generation during ageing

Efficient light-emitting diodes based on nanocrystalline perovskite in a dielectric polymer matrix.

Electroluminescence in light-emitting devices relies on the encounter and radiative recombination of electrons and holes in the emissive layer. In organometal halide perovskite light-emitting diodes, poor film formation creates electrical shunting paths, where injected charge carriers bypass the perovskite emitter, leading to a loss in electroluminescence yield. Here, we report a solution-processing method to block electrical shunts and thereby enhance electroluminescence quantum efficiency in perovskite devices. In this method, a blend of perovskite and a polyimide precursor dielectric (PIP) is solution-deposited to form perovskite nanocrystals in a thin-film matrix of PIP. The PIP forms a pinhole-free charge-blocking layer, while still allowing the embedded perovskite crystals to form electrical contact with the electron- and hole-injection layers. This modified structure reduces nonradiative current losses and improves quantum efficiency by 2 orders of magnitude, giving an external quantum efficiency of 1.2%. This simple technique provides an alternative route to circumvent film formation problems in perovskite optoelectronics and offers the possibility of flexible and high-performance light-emitting displays.The authors acknowledge funding from the Gates Cambridge Trust, the Singapore National Research Foundation (Energy Innovation Programme Office), the KACST-Cambridge University Joint Centre of Excellence, the Royal Society/Sino-British Fellowship Trust, and the Engineering and Physical Sciences Research Council, UK. We also thank Dr. Alessandro Sepe for helpful discussions of the XRD data.This is the final version of the article. It first appeared from ACS via http://dx.doi.org/10.1021/acs.nanolett.5b0023

Understanding the role of grain boundaries on charge-carrier and ion transport in Cs2AgBiBr6 thin films

Halide double perovskites have gained significant attention, owing to their composition of low-toxicity elements, stability in air, and recent demonstrations of long charge-carrier lifetimes that can exceed 1 s. In particular, Cs2AgBiBr6 has been the subject of many investigations in photovoltaic devices. However, the efficiencies of solar cells based on this double perovskite are still far from the theoretical efficiency limit of the material. Here, we investigate the role of grain size on the optoelectronic properties of Cs2AgBiBr6 thin films. We show through cathodoluminescence measurements that grain boundaries are the dominant non-radiative recombination sites. We also demonstrate through field-effect transistor and temperature-dependent transient current measurements that grain boundaries act as the main channels for ion transport. Interestingly, we find a positive correlation between carrier mobility and temperature, which resembles the hopping mechanism often seen in organic semiconductors. These findings explain the discrepancy between the long diffusion lengths >1 m found in Cs2AgBiBr6 single crystals versus the limited performance achieved in their thin film counterparts. Our work shows that mitigating the impact of grain boundaries will be critical for these double perovskite thin films to reach the performance achievable based on their intrinsic single-crystal properties

The size of electron-hole pairs in pi conjugated systems

We have performed momentum dependent electron energy-loss studies of the electronic excitations in sexithiophene and compared the results to those from parent oligomers. Our experiment probes the dynamic structure factor S(q,omega)and we show that the momentum dependent intensity variation of the excitations observed can be used to extract the size of the electron-hole pair created in the excitation process. The extension of the electron-hole pairs along the molecules is comparable to the length of the molecules and thus maybe only limited by structural constraints. Consequently, the primary intramolecular electron-hole pairs are relatively weakly bound. We find no evidence for the formation of excitations localized on single thiophene units.Comment: RevTex, 3 figures, to appear in Physical Review Letter

Pressure Tuning of the Charge Density Wave in the Halogen-Bridged Transition-Metal (MX) Solid Pt2Br6(NH3)4Pt_2Br_6(NH_3)_4

We report the pressure dependence up to 95 kbar of Raman active stretching modes in the quasi-one-dimensional MX chain solid $Pt_2Br_6(NH_3)_4$. The data indicate that a predicted pressure-induced insulator-to-metal transition does not occur, but are consistent with the solid undergoing either a three-dimensional structural distortion, or a transition from a charge-density wave to another broken-symmetry ground state. We show that such a transition cacan be well-modeled within a Peierls-Hubbard Hamiltonian. 1993 PACS: 71.30.+h, 71.45.Lr, 75.30.Fv, 78.30.-j, 81.40.VwComment: 4 pages, ReVTeX 3.0, figures available from the authors on request (Gary Kanner, [email protected]), to be published in Phys Rev B Rapid Commun, REVISION: minor typos corrected, LA-UR-94-246