High-speed time-reversed ultrasonically encoded (TRUE) optical focusing inside dynamic scattering media at 793 nm

Time-reversed ultrasonically encoded (TRUE) optical focusing is an emerging technique that focuses light deep into scattering media by phase-conjugating ultrasonically encoded diffuse light. In previous work, the speed of TRUE focusing was limited to no faster than 1 Hz by the response time of the photorefractive phase conjugate mirror, or the data acquisition and streaming speed of the digital camera; photorefractive-crystal-based TRUE focusing was also limited to the visible spectral range. These time-consuming schemes prevent this technique from being applied in vivo, since living biological tissue has a speckle decorrelation time on the order of a millisecond. In this work, using a Tedoped Sn_2P_2S_6 photorefractive crystal at a near-infrared wavelength of 793 nm, we achieved TRUE focusing inside dynamic scattering media having a speckle decorrelation time as short as 7.7 ms. As the achieved speed approaches the tissue decorrelation rate, this work is an important step forward toward in vivo applications of TRUE focusing in deep tissue imaging, photodynamic therapy, and optical manipulation

Highly efficient acoustooptic diffraction in Sn2P2S6 crystals

We have studied the acoustooptic (AO) diffraction in Sn2P2S6 crystals and found that they manifest high values of AO figure of merit. The above crystals may therefore be used as highly efficient materials in different AO applications.Comment: 5 pages, 1 figur

Sn Vacancies in Photorefractive Sn\u3csub\u3e2\u3c/sub\u3eP\u3csub\u3e2\u3c/sub\u3eS\u3csub\u3e6\u3c/sub\u3e Crystals: An Electron Paramagnetic Resonance Study of an Optically Active Hole Trap

Electron paramagnetic resonance (EPR) is used to identify the singly ionized charge state of the Sn vacancy (V−Sn) in single crystals of Sn2P2S6 (often referred to as SPS). These vacancies, acting as a hole trap, are expected to be important participants in the photorefractive effect observed in undoped SPS crystals. In as-grown crystals, the Sn vacancies are doubly ionized (V2−Sn) with no unpaired spins. They are then converted to a stable EPR-active state when an electron is removed (i.e., a hole is trapped) during an illumination below 100 K with 633 nm laser light. The resulting EPR spectrum has g-matrix principal values of 2.0079, 2.0231, and 1.9717. There are resolved hyperfine interactions with two P neighbors and one Sn neighbor. The isotropic portions of these hyperfine matrices are 167 and 79 MHz for the two 31P neighbors and 8504 MHz for the one Sn neighbor (this latter value is the average for 117Sn and 119Sn). These V−Sn vacancies are shallow acceptors with the hole occupying a diffuse wave function that overlaps the neighboring Sn2+ ion and (P2S6)4− anionic unit. Using a general-order kinetics approach, an analysis of isothermal decay curves of the V−Sn EPR spectrum in the 107–115 K region gives an activation energy of 283 meV

Sulfur Vacancies in Photorefractive Sn\u3csub\u3e2\u3c/sub\u3eP\u3csub\u3e2\u3c/sub\u3eS\u3csub\u3e6\u3c/sub\u3e Crystals

A photoinduced electron paramagnetic resonance (EPR) spectrum in single crystals of Sn2P2S6 (SPS) is assigned to an electron trapped at a sulfur vacancy. These vacancies are unintentionally present in undoped SPS crystals and are expected to play an important role in the photorefractive behavior of the material. Nonparamagnetic sulfur vacancies are formed during the initial growth of the crystal. Subsequent illumination below 100 K with 442 nm laser light easily converts these vacancies to EPR-active defects. The resulting S = 1/2 spectrum shows well-resolved and nearly isotropic hyperfine interactions with two P ions and two Sn ions. Partially resolved interactions with four additional neighboring Sn ions are also observed. Principal values of the g matrix are 1.9700, 1.8946, and 1.9006, with the corresponding principal axes along the a, b, and c directions in the crystal. The isotropic parts of the two primary 31P hyperfine interactions are 19.5 and 32.6 MHz and the isotropic parts of the two primary Sn hyperfine interactions are 860 and 1320 MHz (the latter values are each an average for 117Sn and 119Sn). These hyperfine results suggest that singly ionized sulfur vacancies have a diffuse wave function in SPS crystals, and thus are shallow donors. Before illumination, sulfur vacancies are in the doubly ionized charge state because of compensation by unidentified acceptors. They then trap an electron during illumination. The EPR spectrum from the sulfur vacancy is destroyed when a crystal is heated above 120 K in the dark and reappears when the crystal is illuminated again at low temperature

Nobelova nagrada za kemiju 2013

Rad ja napisan povodom Nobelove nagrade za kemiju za 2013. godinu

Dual Role of Sb Ions as Electron Traps and Hole Traps in Photorefractive Sn\u3csub\u3e2\u3c/sub\u3eP\u3csub\u3e2\u3c/sub\u3eS\u3csub\u3e6\u3c/sub\u3e Crystals

Doping photorefractive single crystals of Sn2P2S6 with antimony introduces both electron and hole traps. In as-grown crystals, Sb3+ (5s2) ions replace Sn2+ ions. These Sb3+ ions are either isolated (with no nearby perturbing defects) or they have a charge-compensating Sn2+ vacancy at a nearest-neighbor Sn site. When illuminated with 633 nm laser light, isolated Sb3+ ions trap electrons and become Sb2+ (5s25p1) ions. In contrast, Sb3+ ions with an adjacent Sn vacancy trap holes during illumination. The hole is primarily localized on the (P2S6)4− anionic unit next to the Sb3+ ion and Sn2+ vacancy. These trapped electrons and holes are thermally stable below ∼200 K, and they are observed with electron paramagnetic resonance (EPR) at temperatures below 150 K. Resolved hyperfine interactions with 31P, 121Sb, and 123Sb nuclei are used to establish the defect models. Abstract © 2016 Optical Society of Americ

Dual Role of Sb Ions as Electron Traps and Hole Traps in Photorefractive Sn2P2S6 Crystals

Doping photorefractive single crystals of Sn2P2S6 with antimony introduces both electron and hole traps. In as-grown crystals, Sb3+ (5s2 ) ions replace Sn2+ ions. These Sb3+ ions are either isolated (with no nearby perturbing defects) or they have a chargecompensating Sn2+ vacancy at a nearest-neighbor Sn site. When illuminated with 633 nm laser light, isolated Sb3+ ions trap electrons and become Sb2+ (5s2 5p1 ) ions. In contrast, Sb3+ ions with an adjacent Sn vacancy trap holes during illumination. The hole is primarily localized on the (P2S6) 4− anionic unit next to the Sb3+ ion and Sn2+ vacancy. These trapped electrons and holes are thermally stable below ∼200 K, and they are observed with electron paramagnetic resonance (EPR) at temperatures below 150 K. Resolved hyperfine interactions with 31P, 121Sb, and 123Sb nuclei are used to establish the defect models

Особенности построения электрохимического газоанализатора оксида углерода в атмосферном воздухе

Проаналізовано основні джерела викидів оксиду вуглецю в атмосферу. Проведено порівняльний аналіз декількох моделей електрохімічних газоаналізаторів. Описано особливості побудови та експлуатації автоматичного ГА оксиду вуглецю 621ЕХ 20.The basic sources of carbon monoxide emissions in atmosphere are analysed. The comparative analysis of a few models of electrochemical GA is conducted. The features of construction and exploitation of automatic carbon monoxide GA 621EX20 are described.Проанализированы основные источники выбросов оксида углерода в атмосферу. Проведен сравнительный анализ нескольких моделей электрохимических ГА. Описаны особенности построения и эксплуатации автоматического ГА оксида углерода 621ЕХ 20