Electronic and structural distortions in graphene induced by carbon vacancies and boron doping

We present an ab initio study on the structural and electronic distortions of modified graphene by creation of vacancies, inclusion of boron atoms, and the coexistence of both, by means of thermodynamics and band structure calculations. In the case of coexistence of boron atoms and vacancy, the modified graphene presents spin polarization only when B atoms locate far from vacancy. Thus, when a boron atom fills single- and di-vacancies, it suppresses the spin polarization of the charge density. In particular when B atoms fill a di-vacancy a new type of rearrangement occurs, where a stable BC4 unit is formed inducing important out of plane distortions to graphene. All these findings suggest that new chemical modifications to graphene and new type of vacancies can be used for interesting applications such as sensor and chemical labeling.Comment: 22 pages, 9 figures and 3 table

Tetra­kis[μ-2-(3-phenoxy­phen­yl)propionato-κ2 O:O′]bis­[(dimethyl­formamide-κO)copper(II)]

The title compound, [Cu2(C15H13O3)4(C3H7NO)2], is formed by the chelate coordination of four racemic fenoprofenate (fenoprofenate is 2,3-phenoxyphenyl propionate) anions and two dimethyl­formamide mol­ecules to two copper(II) ions, building a paddle-wheel dinuclear mol­ecule. The distorted square-pyramidal coordination of each CuII atom is made up of four O atoms of the four fenoprofenate units and another O atom from a dimethyl­formamide mol­ecule. The two enanti­omeric forms of the fenoprofenate anions are present in the complex, in an optically inactive centrosymmetric arrangement

Белорусская энергетика: современное состояние и перспективы

Материалы III Междунар. науч. конф. студентов, аспирантов и молодых ученых, Гомель, 20 мая 2010 г

Mechanical properties of Graphene Nanoribbons

Herein, we investigate the structural, electronic and mechanical properties of zigzag graphene nanoribbons upon the presence of stress applying Density Functional Theory within the GGA-PBE approximation. The uniaxial stress is applied along the periodic direction, allowing a unitary deformation in the range of +/- 0.02%. The mechanical properties show a linear-response within that range while the non-linear dependence is found for higher strain. The most relevant results indicate that Young's modulus is considerable higher than those determined for graphene and carbon nanotubes. The geometrical reconstruction of the C-C bonds at the edges hardness the nanostructure. Electronic structure features are not sensitive to strain in this linear elastic regime, being an additional promise for the using of carbon nanostructures in nano-electronic devices in the near future.Comment: 30 pages. J. Phys.: Condens. Matter (accepted

Nanostructured carbon-based thin films : prediction and design

Carbon-based thin films are a vast group of materials of great technological importance. Thanks to the different bonding options for carbon, a large variety of structures (from amorphous to nanostructured) can be achieved in the process of film synthesis. The structural diversity increases even more if carbon is combined with relatively small quantities of atoms of other elements. This results in a set of materials with many different interesting properties for a wide range of technological applications. This doctoral thesis is about nanostructured carbon-based thin films. In particular, the focus is set on theoretical modeling, prediction of structural features and design of sulfo carbide (CSx) and carbon fluoride (CFx) thin films. The theoretical approach follows the synthetic growth concept (SGC) which is based on the density functional theory. The SGC departure point is the fact that the nanostructured films of interest can be modeled as assemblies of low dimensional units (e.g., finite graphene-like model systems), similarly to modeling graphite as stacks of graphene sheets. Moreover, the SGC includes a description of the groups of atoms that act as building blocks (i.e., precursors) during film deposition, as well as their interaction with the growing film. This thesis consists of two main parts: Prediction: In this work, I show that nanostructured CSx thin films can be expected for sulfur contents up to 20 atomic % with structural characteristics that go from graphite-like to fullerene-like (FL). In the case of CFx thin films, a diversity of structures are predicted depending on the fluorine concentration. Short range ordered structures, such as FL structure, can be expected for low concentrations (up to 5 atomic %). For increasing fluorine concentration, diamond-like and polymeric structures should predominate. As a special case, I also studied the ternary system CSxFy. The calculations show that CSxFy thin films with nanostructured features should be possible to synthesize at low sulfur and fluorine concentrations and the structural characteristics can be described and explained in terms of the binaries CSx and CFx. Design: The carbon-based thin films predicted in this thesis were synthesized by magnetron sputtering. The results from my calculations regarding structure and composition, and analysis of precursors (availability and role during deposition process) were successfully combined with the experimental techniques in the quest of obtaining films with desired structural features and understanding their properties

Fullerene-like CSx: A first-principles study of synthetic growth

Fullerene-Like (FL) Sulpho-Carbide (CSx) compounds have been addressed by first principles calculations. Geometry optimization and cohesive energy results are presented for the relative stability of precursor species such as C2S, CS2, and C2S2 in isolated form. The energy cost for structural defects, arising from the substitution of C by S is also reported. Similar to previously synthesized FL-CNx and FL-CPx compounds, the pentagon, the double pentagon defects as well as the Stone-Wales defects are confirmed as energetically feasible in CSx compounds.Original Publication:Cecilia Goyenola, Gueorgui Kostov Gueorguiev, Sven Stafström and Lars Hultman, Fullerene-like CSx: A first-principles study of synthetic growth, 2011, CHEMICAL PHYSICS LETTERS, (506), 1-3, 86-91.http://dx.doi.org/10.1016/j.cplett.2011.02.059Copyright: Elsevier Science B.V., Amsterdam.http://www.elsevier.com

CF(x): A first-principles study of structural patterns arising during synthetic growth

Structural and bonding patterns arising from the incorporation of fluorine atoms in a graphene-like network relevant to the deposition of carbon fluoride (CF(x)) films were addressed by first-principles calculations. We find that large N-member (N = 8-12) rings, defects by sheet branching, and defects associated with bond rotation pertain to CF(x). The cohesive energy gains associated with these patterns are similar to 0.2-0.4 eV/at., which is similar to those for a wide range of defects in other C-based nanostructured solids. Fullerene-like CF(x) is predicted for F concentrations below similar to 10 at.%, while CF(x) compounds with higher F content are predominantly amorphous or polymeric.Funding Agencies|Swedish Governmental Agency for Innovation Systems (VINNOVA)||European Research Council (ERC)||</p

Carbon Fluoride, CFx: Structural Diversity as Predicted by First Principles

Fluorinated carbon-based thin films offer a wide range of properties for many technological applications that depend on the microstructure of the films. To gain a better understanding of the role of fluorine in the structural formation of these films, CFx systems based on graphene-like fragments were studied by first-principles calculations. Generally, the F concentration determines the type of film that can be obtained. For low F concentrations (up to similar to 5 at. %), films with fullerene-like as well as graphite-like features are expected. Larger F concentrations (greater than= 10 at. %) give rise to increasingly amorphous carbon films. Further increasing the F concentration in the films leads to formation of a polymer-like microstructure. To aid the characterization of CFx systems generated by computational methods, a statistical approach is developed