4,494 research outputs found

    Ge growth on ion-irradiated Si self-affine fractal surfaces

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    We have carried out scanning tunneling microscopy experiments under ultrahigh vacuum condition to study the morphology of ultrathin Ge films eposited on pristine Si(100) and ion-irradiated Si(100) self-affine fractal surfaces. The pristine and the ion-irradiated Si(100) surface have roughness exponents of alpha=0.19+/-0.05 and alpha=0.82+/-0.04 respectively. These measurements were carried out on two halves of the same sample where only one half was ion-irradiated. Following deposition of a thin film of Ge (~6 A) the roughness exponents change to 0.11+/-0.04 and 0.99+/-0.06, respectively. Upon Ge deposition, while the roughness increases by more than an order of magnitude on the pristine surface, a smoothing is observed for the ion-irradiated surface. For the ion-irradiated surface the correlation length xi increases from 32 nm to 137 nm upon Ge deposition. Ge grows on Si surfaces in the Stranski-Krastanov or layer-plus-island mode where islands grow on a wetting layer of about three atomic layers. On the pristine surface the islands are predominantly of square or rectangular shape, while on the ion-irradiated surface the islands are nearly diamond shaped. Changes of adsorption behaviour of deposited atoms depending on the roughness exponent (or the fractal dimension) of the substrate surface are discussed.Comment: 5 pages, 2 figures and 1 tabl

    Optimal error estimates of a mixed finite element method for\ud parabolic integro-differential equations with non smooth initial data

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    In this article, a new mixed method is proposed and analyzed for parabolic integro-differential equations (PIDE) with nonsmooth initial data. Compared to mixed methods for PIDE, the present method does not bank on a reformulation using a resolvent operator. Based on energy arguments and without using parabolic type duality technique, optimal L2-error estimates are derived for semidiscrete approximations, when the initial data is in L2. Due to the presence of the integral term, it is, further, observed that estimate in dual of H(div)-space plays a role in our error analysis. Moreover, the proposed analysis follows the spirit of the proof technique used for deriving optimal error estimates of finite element approximations to PIDE with smooth data and therefore, it unifies both the theories, i.e., one for smooth data and other for nonsmooth data. Finally, the proposed analysis can be easily extended to other mixed method for PIDE with rough initial data and provides an improved result

    Nanoscale Electrostatic Control of Oxide Interfaces

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    We develop a robust and versatile platform to define nanostructures at oxide interfaces via patterned top gates. Using LaAlO3_3/SrTiO3_3 as a model system, we demonstrate controllable electrostatic confinement of electrons to nanoscale regions in the conducting interface. The excellent gate response, ultra-low leakage currents, and long term stability of these gates allow us to perform a variety of studies in different device geometries from room temperature down to 50 mK. Using a split-gate device we demonstrate the formation of a narrow conducting channel whose width can be controllably reduced via the application of appropriate gate voltages. We also show that a single narrow gate can be used to induce locally a superconducting to insulating transition. Furthermore, in the superconducting regime we see indications of a gate-voltage controlled Josephson effect.Comment: Version after peer review; includes additional data on superconductivit

    Simulation for Signature of Higgs Boson in UHE Cosmic Ray Interactions Through Vacuum Excitation

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    A new study of shower age distribution in near vertical showers by EAS air shower array

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    The air shower array has been developed since it started operation in 1931. The array covering an area of 900 sq m now incorporates 21 particle density sampling detectors around two muon magnetic spectrographs. The air showers are detected in the size range 10 to the 4th power to 10 to the 6th power particles. A total of 11000 showers has so far been detected. Average values of shower age have been obtained in various shower size ranges to study the dependence of shower age on shower size. The core distance dependence of shower age parameter has also been analyzed for presentation

    Snow cover, snowmelt and runoff in the Himalayan River basins

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    Not withstanding the seasonal vagaries of both rainfall amount and snowcover extent, the Himalayan rivers retain their basic perennial character. However, it is the component of snowmelt yield that accounts for some 60 to 70 percent of the total annual flow volumes from Hamilayan watersheds. On this large hydropotential predominantly depends the temporal performance of hydropower generation and major irrigation projects. The large scale effects of Himalayan snowcover on the hydrologic responses of a few selected catchments in western Himalayas was studied. The antecedent effects of snowcover area on long and short term meltwater yields can best be analyzed by developing appropriate hydrologic models forecasting the pattern of snowmelt as a function of variations in snowcover area. It is hoped that these models would be of practical value in the management of water resources. The predictability of meltwater for the entire snowmelt season was studied, as was the concurrent flow variation in adjacent watersheds, and their hydrologic significance. And the applicability of the Snowmelt-Runoff Model for real time forecast of daily discharges during the major part of the snowmelt season is examined

    Nanoscale self-affine surface smoothing by ion bombardment

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    The topography of silicon surfaces irradiated by a 2-MeV Si+ ion beam at normal incidence and ion fluences in the range 1015-1016ions/cm2 has been investigated using scanning tunneling microscopy. At length scales below ~50 nm, surface smoothing is observed; the smoothing is more prominent at smaller length scales. The smoothed surface is self-affine with a scaling exponent α=0.53± 0.03
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