2 research outputs found
Spin injection in n-type resonant tunneling diodes
We have studied the polarized resolved photoluminescence of n-type GaAs/AlAs/GaAlAs resonant tunneling diodes
under magnetic field parallel to the tunnel current. Under resonant tunneling conditions, we have observed two
emission lines attributed to neutral (X) and negatively charged excitons (X−
). We have observed a
voltage-controlled circular polarization degree from the quantum well emission for both lines, with values up to
−88% at 15 T at low voltages which are ascribed to an efficient spin injection from the 2D gases formed at the
accumulation layers