High-energy ion processing of materials for improved hardcoatings

Research has been directed toward use of economically viable ion processing strategies for production and improvement of hardcoatings. Processing techniques were high-energy ion implantation and electron cyclotron resonance microwave plasma processing. Subject materials were boron suboxides, Ti-6Al-4V alloy, CoCrMo alloy (a Stellite{trademark}), and electroplated Cr. These materials may be regarded either as coatings themselves (which might be deposited by thermal spraying, plasma processing, etc.) or in some cases, as substrates whose surfaces can be improved. hardness and other properties in relation to process variables are reported

Nanoindentation and nanoscratching of hard coating materials for magnetic disks

Nanoindentation and nanoscratching experiments have been performed to assess the mechanical and tribological behavior of three thin film materials with potential application as wear resistant coatings for magnetic disk storage: (1) hydrogenated-carbon (CHx); (2) nitrogenated-carbon (CNx); and (3) boron suboxide (BOx). The hardness and elastic modulus were measured using nanoindentation. Ultra-low load nanoscratching tests were performed to assess the relative scratch resistance of the films and measure their friction coefficients. The mechanical and tribological performance of the three materials are discussed and compared

Peritoneal Dialysis in Austere Environments: An Emergent Approach to Renal Failure Management

Peritoneal dialysis (PD) is a means of renal replacement therapy (RRT) that can be performed in remote settings with limited resources, including regions that lack electrical power. PD is a mainstay of end-stage renal disease (ESRD) therapy worldwide, and the ease of initiation and maintenance has enabled it to flourish in both resource-limited and resource-abundant settings. In natural disaster scenarios, military conflicts, and other austere areas, PD may be the only available life-saving measure for acute kidney injury (AKI) or ESRD. PD in austere environments is not without challenges, including catheter placement, availability of dialysate, and medical complications related to the procedure itself.  However, when hemodialysis is unavailable, PD can be performed using generally available medical supplies including sterile tubing and intravenous fluids. Amidst the ever-increasing global burden of ESRD and AKI, the ability to perform PD is essential for many medical facilities

Electron cyclotron resonance microwave ion sources for thin film processing

Plasmas created by microwave absorption at the electron cyclotron resonance (ECR) are increasingly used for a variety of plasma processes, including both etching and deposition. ECR sources efficiently couple energy to electrons and use magnetic confinement to maximize the probability of an electron creating an ion or free radical in pressure regimes where the mean free path for ionization is comparable to the ECR source dimensions. The general operating principles of ECR sources are discussed with special emphasis on their use for thin film etching. Data on source performance during Cl base etching of Si using an ECR system are presented. 32 refs., 5 figs

Photolytic Laser-Induced Chemical Vapor Deposition for Aluminum Film Growth

137 p.Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 1987.The mechanisms of UV photodissociation of trimethylaluminum (TMA) and triethylaluminum (TEA) by a KrF (248 nm) pulsed excimer laser were investigated using optical emission spectroscopy, including time-resolved emission measurements. Position-resolved growth rate measurements were used to investigate film growth kinetics during photolysis of TMA using 248 nm light, and deposited films were analyzed using in-situ Auger electron spectroscopy (AES), secondary ion mass spectrometry (SIMS), x-ray diffraction (XRD), scanning electron microscopy, and resistivity measurements.The optical emission spectroscopy experiments were used to determine that during photodissociation of TMA using 248 nm light, electronically excited Al and CH are produced directly in the gas phase without collisions. These results, combined with analysis of the deposited films and a thermodynamic analysis of homogeneous and heterogeneous reactions involving TMA and Al(CH\sb3), lead to the conclusion that the primary precursors for film growth are photogenerated Al atoms which then diffuse to the substrate to condense and form a film.The films, however, were found to be heavily contaminated with C (up to approximately 40 at%), which indicates other species, such as CH, were also precursors to film growth. The use of H\sb2 as a scavenger for gas-phase hydrocarbons and 248 nm pulsed surface irradiation during film growth were both found to be ineffective for reduction of C incorporation.TEA was substituted for TMA to see if the CH formation channel was specific to TMA. CH production was suppressed, but not eliminated, and a new channel for the production of excited AlH was opened. Excited Al was also observed, and all three species were found by time-resolved emission measurements to be produced without collisions.U of I OnlyRestricted to the U of I community idenfinitely during batch ingest of legacy ETD

Metallization technology for tenth-micron range integrated circuits. CRADA final report for CRADA number ORNL92-0104

A critical step in the fabrication of integrated circuits is the deposition of metal layers which interconnect the various circuit elements that have been formed in earlier process steps. In particular, columns of metal 2-3 times higher than the characteristic dimension of the circuit are needed. At the time of initiation of this CRADA, the state-of-the-art was the production of 1-1.5 micron-high columns for 0.5 micron-wide features with an expected reduction in size by a factor of two or more within five to ten years. Present commercial technologies cannot deposit such features with the process temperature, aspect ratio (ratio of height to diameter), and/or materials capability needed for future devices. This CRADA had the objective of developing a commercial tool capable of depositing metal (either copper or aluminum) at temperatures below 300{degrees}C into features with sizes approaching 0.2 micron on 200-mm wafers. The capability of future modification for deposition of alloys of controllable composition was also an important characteristic. The key technical accomplishments of this CRADA include the development of a system capable of delivering highly ionized metal plasmas, refinement of spectroscopic techniques for in situ monitoring of the ion/neutral ratio, use of these plasmas for filling and lining submicron trenches used for integrated circuit fabrication, and generation of fundamental data on the angular dependent sputtering yield which will prove useful for modeling the time evolution of feature filling and lining