2035 AND U.S. NAVY INTELLIGENCE: COMMUNITY MANNING FOR SUCCESS IN THE INDO-PACIFIC

This thesis seeks to understand the best method for employing the Naval intelligence community in 2035 and beyond. Naval intelligence manning has remained largely unchanged since the end of the Cold War. As the United States adapts to a new geopolitical paradigm involving peer military forces and the rapid technological advances, the Naval intelligence community must adapt to ensure U.S. success in all phases of conflict. This thesis sets the stage for a future geopolitical scenario defined by multipolarity, confrontation with China, and the rise of artificial intelligence and remote technologies. This thesis examines the problem of strategic warning to enable deterrence, effective team building to optimize information flow, and the effectiveness of tactical intelligence in the modern and future naval battlefield. Ultimately, this thesis argues the Naval intelligence community should expand its support to tactical warfighting units to ensure sustained U.S. naval dominance.Lieutenant, United States NavyApproved for public release. Distribution is unlimited

Kinetics governing phase separation of nanostructured Sn_xGe_(1–x) alloys

We have studied the dynamic phenomenon of Sn_xGe_(1–x)/Ge phase separation during deposition by molecular beam epitaxy on Ge(001) substrates. Phase separation leads to the formation of direct band gap semiconductor nanowire arrays embedded in Ge oriented along the [001] growth direction. The effect of strain and composition on the periodicity were decoupled by growth on Ge(001) and partially relaxed Si_yGe_(1–y)/Ge(001) virtual substrates. The experimental results are compared with three linear instability models of strained film growth and find good agreement with only one of the models for phase separation during dynamic growth

Low temperature exfoliation process in hydrogen-implanted germanium layers

The feasibility of transferring hydrogen-implanted germanium to silicon with a reduced thermal budget is demonstrated. Germanium samples were implanted with a splitting dose of 5 x 10(16) H(2)(+) cm(-2) at 180 keV and a two-step anneal was performed. Surface roughness and x-ray diffraction pattern measurements, combined with cross-sectional TEM analysis of hydrogen-implanted germanium samples were carried out in order to understand the exfoliation mechanism as a function of the thermal budget. It is shown that the first anneal performed at low temperature (<= 150 degrees C for 22 h) enhances the nucleation of hydrogen platelets significantly. The second anneal is performed at 300 degrees C for 5 min and is shown to complete the exfoliation process by triggering the formation of extended platelets. Two key results are highlighted: (i) in a reduced thermal budget approach, the transfer of hydrogen-implanted germanium is found to follow a mechanism similar to the transfer of hydrogen-implanted InP and GaAs, (ii) such a low thermal budget (<300 degrees C) is found to be suitable for directly bonded heterogeneous substrates, such as germanium bonded to silicon, where different thermal expansion coefficients are involved. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3326942

Selective-Area Growth of Heavily \u3cem\u3en\u3c/em\u3e–Doped GaAs Nanostubs on Si(001) by Molecular Beam Epitaxy

Using an aspect ratio trapping technique, we demonstrate molecular beam epitaxy of GaAs nanostubs on Si(001) substrates. Nanoholes in a SiO2 mask act as a template for GaAs-on-Si selective-area growth(SAG) of nanostubs 120 nm tall and ≤100 nm in diameter. We investigate the influence of growthparameters including substrate temperature and growth rate on SAG. Optimizing these parameters results in complete selectivity with GaAsgrowth only on the exposed Si(001). Due to the confined-geometry, strain and defects in the GaAs nanostubs are restricted in lateral dimensions, and surface energy is further minimized. We assess the electrical properties of the selectively grownGaAs nanostubs by fabricating heterogeneous p+–Si/n+–GaAs p–n diodes