DESARROLLO DE HERRAMIENTAS DE VISIÓN ARTIFICIAL EN MATLAB PARA INSPECCIÓN DE TARJETAS PCB

A través de este trabajo se presenta el desarrollo de herramientas de inspección para Matlab basadas en un sistema de visión industrial, así como una propuesta de interfaz de usuario para la configuración de un sistema de inspección en tiempo real, usando como herramienta de adquisición una webcam común para detección de defectos como ausencia o desplazamiento de elementos con respecto a componentes Thru-Hole, así como la detección de corto-circuito, soldadura excesiva, componente sin soldadura, detección de perforaciones, ausencia de componentes y conteo de circuitos integrados SMT. La implementación de este sistema se realiza en Matlab® presentándose una comparativa en funcionalidad con el software In-Sight Explorer® versión 4.9.3.Palabra(s) Clave(s): control de calidad, inspección PCB,  visión artificial

Mid-infrared photodetectors based on GaAsSb-capped InAs quantum dots

Quantum dot infrared photodetectors (QDIPs) are very attractive for many applications such as infrared imaging, remote sensing and gas sensing, thanks to its promising features such as high temperature operation, normal incidence response and low dark current [1]. However, the key issue is to obtain a high-quality active region which requires an optimization of the nanostructure. By using GaAsSb capping layer, InAs QDs have improved their optical emission in the range between 1.15 and 1.3 m (at Sb composition of 14 %), due to a reduction of a compressive strain in QD and an increment of a QD height [2]. In this work, we have demonstrated strong and narrow intraband photoresponses at ~ 5 m from GaAsSb-capped InAs/GaAs QDIPs under normal light-incidence

Synthesis and characterization of GaAsSb-capped InAs-based QDIPs

Quantum dot infrared photodetectors (QDIPs) are very attractive for infrared imaging applications due to its promising features such as high temperature operation, normal incidence response and low dark current [1]. However, the key issue is to obtain a high quality active region which requires a structural optimization of the nanostructures. With using GaAsSb capping layer, the optical properties, such as the PL intensity and its full width at half maximum (FWHM), of InAs QDs have been improved in the range between 1.15 and 1.5 m, because of the reduction of the compressive strain in QDs and the increment of QD height [2]. In this work, we have demonstrated strong and narrow intraband photoresponse spectra from GaAsSb-capped InAs-based QDIP

Room temperature photoluminescence of InGaAs Surface Quantum Dots

Self-assembled InGaAs quantum dots show unique physical properties such as three dimensional confinement, high size homogeneity, high density and low number of dislocations. They have been extensively used in the active regions of laser devices for optical communications applications [1]. Therefore, buried quantum dots (BQDs) embedded in wider band gap materials have been normally studied. The wave confinement in all directions and the stress field around the dot affect both optical and electrical properties [2, 3]. However, surface quantum dots (SQDs) are less affected by stress, although their optical and electrical characteristics have a strong dependence on surface fluctuation. Thus, they can play an important role in sensor application

Biología del virus del papiloma humano y técnicas de diagnóstico

El virus del papiloma humano (VPH) pertenece al grupo de virus con tropismo por los epitelios; infectan predominantemente la piel y las membranas mucosas y producen proliferaciones benignas o papilomas, que bajo ciertas circunstancias pueden experimentar transformación maligna. El VPH es considerado el agente causal más importante del carcinoma del cérvix uterino y el conocimiento de su biología es fundamental para el entendimiento de la carcinogénesis cervical. Existe evidencia epidemiológica y molecular sobre la estrecha relación del VPH en el desarrollo del carcinoma cervical y sus precursores. La infección por el virus del papiloma humano es un importante problema de salud pública en nuestro país, para lo cual se ha identificado a la población con claros factores de riesgo, tales como: inicio temprano de vida sexual activa y múltiples parejas sexuales, hacia quienes se dirigen todos los esfuerzos de prevención y diagnóstico temprano, donde ya se incluyen estudios avanzados y cada vez más sensibles y específicos, con el fin de detectar más oportunamente esta mortal enfermedad

Gas sensor based on room temperature optical properties of Surface QDs

Self-organized InGaAs QDs are intensively studied for optoelectronic applications. Several approaches are in study to reach the emission wavelengths needed for these applications. The use of antimony (Sb) in either the capping layer or into the dots is one example. However, these studies are normally focused on buried QD (BQD) where there are still different controversial theories concerning the role of Sb. Ones suggest that Sb incorporates into the dot [1], while others support the hypothesis that the Sb occupies positions surrounding the dot [2] thus helping to keep their shape during the capping growth

The effect of rapid thermal annealing on the photoluminescence of InAsN/InGaAs dot-in-a-well structures

The effect of post-growth rapid thermal annealing on the optical characteristics of InAsN/InGaAs dot-in-a-well DWELL structures grown by molecular beam epitaxy on GaAs(1 0 0) has been studied. InAs/InGaAs DWELL structures have been used as a reference. Photoluminescence measurements of these samples show similar optical effects, such as a blueshift of the peak wavelength and a reduction of the full width of at half maximum PL emission, in both types of structures up to an annealing temperature of 750 °C. Nevertheless, at 850 °C, these effects are much more pronounced in the structures with N. These results suggest that an additional As–N interdiffusion process inside the InAsN quantum dots plays a dominant role in these effects at high annealing temperatures (850 °C) on InAsN/InGaAs structures

Optimizing wheat seed treatment with entomopathogenic fungi for improving plant growth at early development stages

Aim of study: Entomopathogenic fungi (EPF) are biocontrol agents, plant growth promoters, and increase tolerance to biotic-abiotic stresses. In this study we investigated the factors associated to the application method, which are crucial for the interaction between the fungus and the host plant at initial crop growth stages. Area of study: The study was performed in Cordoba (Spain) Material and methods: Three experiments were performed to investigate: (i) the effect of different concentrations of the surfactant Tween® 80 (0, 0.5, 1, 5, and 10%) on wheat seed coating with conidia of Metarhizium brunneum and seed and conidia viability; (ii) the performance of wheat seedlings at first growth stages after their inoculation with Beauveria bassiana or M. brunneum via seed coating or soil drenching; and (iii) the role of soil sterilization and seed disinfection on leaf concentration of chlorophyll (SPAD) and B. bassiana or M. brunneum colonization. Main results: Tween® 80 concentration linearly improved seed coating (up to 127%) without altering wheat seeds and fungal conidia germination. Seedling length of inoculated plants was significantly increased with B. bassiana and M. brunneum (67% and 46%, respectively) via seed coating. Seed disinfection was key to achieve an enhancement in wheat SPAD (10-18%) with B. bassiana or M. brunneum concerning Control, that combined with sterilization of soil showed the highest endophyte colonization rates (up to 83.3% with both fungi) Research highlights: The surfactant concentration, application method, seed disinfection, and soil sterilization are key parameters to improve the potential benefits on the EPF-plant relationship

Near infrared high efficiency InAs/GaAsSb QDLEDs: band alignment and carrier recombination mechanisms

The development of high efficiency laser diodes (LD) and light emitting diodes (LED) covering the 1.0 to 1.55 μm region of the spectra using GaAs heteroepitaxy has been long pursued. Due to the lack of materials that can be grown lattice-macthed to GaAs with bandgaps in the 1.0 to 1.55 μm region, quantum wells (QW) or quantum dots (QD) need be used. The most successful approach with QWs has been to use InGaAs, but one needs to add another element, such as N, to be able to reach 1.3/1.5μm. Even though LDs have been successfully demonstrated with the QW approach, using N leads to problems with compositional homogeneity across the wafer, and limited efficiency due to strong non-radiative recombination. The alternative approach of using InAs QDs is an attractive option, but once again, to reach the longest wavelengths one needs very large QDs and control over the size distribution and band alignment. In this work we demonstrate InAs/GaAsSb QDLEDs with high efficiencies, emitting from 1.1 to 1.52 μm, and we analyze the band alignment and carrier loss mechanisms that result from the presence of Sb in the capping layer

Stacked GaAs(Sb)(N)-capped InAs/GaAs quantum dots for enhanced solar cell efficiency

Different approaches have arisen aiming to exceed the Shockley-Queisser efficiency limit of solar cells. Particularly, stacking QD layers allows exploiting their unique properties, not only for intermediate-band solar cells or multiple exciton generation, but also for tandem cells in which the tunability of QD properties through the capping layer (CL) could be very useful