35 research outputs found

    Plasma Equilibrium inside Various Cross-Section Capillary Discharges

    Full text link
    Plasma properties inside a hydrogen-filled capillary discharge waveguide were modeled with dissipative magnetohydrodynamic simulations to enable analysis of capillaries of circular and square cross-sections implying that square capillaries can be used to guide circularly-symmetric laser beams. When the quasistationary stage of the discharge is reached, the plasma and temperature in the vicinity of the capillary axis has almost the same profile for both the circular and square capillaries. The effect of cross-section on the electron beam focusing properties were studied using the simulation-derived magnetic field map. Particle tracking simulations showed only slight effects on the electron beam symmetry in the horizontal and diagonal directions for square capillary.Comment: 6 pages, 10 figure

    Defect engineering of silicon with ion pulses from laser acceleration

    Get PDF
    Defect engineering is foundational to classical electronic device development and for emerging quantum devices. Here, we report on defect engineering of silicon with ion pulses from a laser accelerator in the laser intensity range of 1019 W cm−2 and ion flux levels of up to 1022 ions cm−2 s−1, about five orders of magnitude higher than conventional ion implanters. Low energy ions from plasma expansion of the laser-foil target are implanted near the surface and then diffuse into silicon samples locally pre-heated by high energy ions from the same laser-ion pulse. Silicon crystals exfoliate in the areas of highest energy deposition. Color centers, predominantly W and G-centers, form directly in response to ion pulses without a subsequent annealing step. We find that the linewidth of G-centers increases with high ion flux faster than the linewidth of W-centers, consistent with density functional theory calculations of their electronic structure. Intense ion pulses from a laser-accelerator drive materials far from equilibrium and enable direct local defect engineering and high flux doping of semiconductors.This work was supported by the Office of Science, Office of Fusion Energy Sciences, of the U.S. Department of Energy, under Contract No. DE-AC02-05CH11231. Experiments at the BELLA Center were enabled through facilities developed by HEP and LaserNetUS. TS and JGL gratefully acknowledge support by the coordinated research project “F11020” of the International Atomic Energy Agency (IAEA). LZT and JS were supported by the Molecular Foundry, a DOE Office of Science User Facility supported by the Office of Science of the U.S. Department of Energy under Contract No. DE-AC02-05CH11231. This research used resources of the National Energy Research Scientific Computing Center, a DOE Office of Science User Facility supported by the Office of Science of the U.S. Department of Energy under Contract No. DE-AC02-05CH11231Peer reviewe

    Supplementary Notes - Defect engineering of silicon with ion pulses from laser acceleration

    Get PDF
    14 pages. -- Supplementary Note 1. Time lapse movie showing evaporation of the aluminum foil mask during 100 shots. -- Supplementary Note 2. Photoluminescence (PL) and Secondary Ion Mass Spectrometry (SIMS) data correlation to PL data. -- Supplementary Note 3. Details on energy deposition and heat calculations. -- Supplementary Note 4. Details on Nuclear Reaction Analysis (NRA). -- Supplementary Note 5. Details on channeling Rutherford Backscattering (ch-RBS). -- Supplementary Note 6. Supplemental material on Density Functional Theory (DFT) calculations of G and W-centers in silicon.Peer reviewe

    Investigation of a hydrogen-filled capillary discharge waveguide for laser-driven plasma accelerator

    No full text
    EThOS - Electronic Theses Online ServiceGBUnited Kingdo
    corecore