Mechanism for bipolar resistive switching in transition metal oxides

We introduce a model that accounts for the bipolar resistive switching phenomenom observed in transition metal oxides. It qualitatively describes the electric field-enhanced migration of oxygen vacancies at the nano-scale. The numerical study of the model predicts that strong electric fields develop in the highly resistive dielectric-electrode interfaces, leading to a spatially inhomogeneous oxygen vacancies distribution and a concomitant resistive switching effect. The theoretical results qualitatively reproduce non-trivial resistance hysteresis experiments that we also report, providing key validation to our model.Comment: Accepted for publication in Physical Review B, 6 twocolumn pages, 5 figure

Hysteresis Switching Loops in Ag-manganite memristive interfaces

Multilevel resistance states in silver-manganite interfaces are studied both experimentally and through a realistic model that includes as a main ingredient the oxygen vacancies diffusion under applied electric fields. The switching threshold and amplitude studied through Hysteresis Switching Loops are found to depend critically on the initial state. The associated vacancy profiles further unveil the prominent role of the effective electric field acting at the interfaces. While experimental results validate main assumptions of the model, the simulations allow to disentangle the microscopic mechanisms behind the resistive switching in metal-transition metal oxide interfaces.Comment: 14 pages, 3 figures, to be published in Jour. of Appl. Phy

Decoupling electrocaloric effect from Joule heating in a solid state cooling device

We report a heat dynamics analysis of the electrocaloric effect (ECE) in commercial multilayer capacitors based on BaTiO3 dielectric, a promising candidate for applications as a solid state cooling device. Direct measurements of the time evolution of the sample's temperature changes under different applied voltages allow us to decouple the contributions from Joule heating and from the ECE. Heat balance equations were used to model the thermal coupling between different parts of the system. Fingerprints of Joule heating and the ECE could be resolved at different time scales. We argue that Joule heating and the thermal coupling of the device to the environment must be carefully taken in to account in future developments of refrigeration technologies employing the ECE.Comment: Acepted to be published in Applied Phys. Letters (2011

Recent advances on information transmission and storage assisted by noise

The interplay between nonlinear dynamic systems and noise has proved to be of great relevance in several application areas. In this presentation, we focus on the areas of information transmission and storage. We review some recent results on information transmission through nonlinear channels assisted by noise. We also present recent proposals of memory devices in which noise plays an essential role. Finally, we discuss new results on the influence of noise in memristors.Comment: To be published in "Theory and Applications of Nonlinear Dynamics: Model and Design of Complex Systems", Proceedings of ICAND 2012 (Springer, 2014

Manganite-based three level memristive devices with self-healing capability

International audienceWe report on non-volatile memory devices based on multifunctional manganites. The electric field induced resistive switching of Ti/La 1/3 Ca 2/3 MnO 3 /n-Si devices is explored using different measurement protocols. We show that using current as the electrical stimulus (instead of standard voltage-controlled protocols) improves the electrical performance of our devices and unveils an intermediate resistance state. We observe three discrete resistance levels (low, intermediate and high), which can be set either by the application of current–voltage ramps or by means of single pulses. These states exhibit retention and endurance capabilities exceeding 10 4  s and 70 cycles, respectively. We rationalize our experimental observations by proposing a mixed scenario were a metallic filament and a SiO x layer coexist, accounting for the observed resistive switching. Overall electrode area dependence and temperature dependent resistance measurements support our scenario. After device failure takes place, the system can be turned functional again by heating up to low temperature (120 °C), a feature that could be exploited for the design of memristive devices with self-healing functionality. These results give insight into the existence of multiple resistive switching mechanisms in manganite-based memristive systems and provide strategies for controlling them. © 2016 Elsevier B.V

Modeling electronic transport mechanisms in metal-manganite memristive interfaces

We studied La0.325Pr0.300Ca0.375MnO3-Ag memristive interfaces. We present a pulsing/measuring protocol capable of registering both quasi-static i-v data and non-volatile remnant resistance. This protocol allowed distinguishing two different electronic transport mechanisms coexisting at the memristive interface, namely space charge limited current and thermionic emission limited current. We introduce a 2-element electric model that accounts for the obtained results and allows predicting the quasi-static i-v relation of the interface by means of a simple function of both the applied voltage and the remnant resistance value. Each element of the electric model is associated to one of the electronic transport mechanisms found. This electric model could result useful for developing time-domain simulation models of metal-manganite memristive interfaces.Fil: Gomez Marlasca, F.. Comisión Nacional de Energía Atómica. Gerencia del Área de Investigaciones y Aplicaciones No Nucleares. Gerencia de Física (Centro Atómico Constituyentes); ArgentinaFil: Ghenzi, Néstor. Comisión Nacional de Energía Atómica; Argentina. Comisión Nacional de Energía Atómica. Gerencia del Área de Investigaciones y Aplicaciones No Nucleares. Gerencia de Física (Centro Atómico Constituyentes); Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas; ArgentinaFil: Leyva, Adelma Graciela. Universidad Nacional de San Martín. Escuela de Ciencia y Tecnología; Argentina. Comisión Nacional de Energía Atómica. Gerencia del Área de Investigaciones y Aplicaciones No Nucleares. Gerencia de Física (Centro Atómico Constituyentes); ArgentinaFil: Albornoz, Cecilia Andrea. Comisión Nacional de Energía Atómica. Gerencia del Área de Investigaciones y Aplicaciones No Nucleares. Gerencia de Física (Centro Atómico Constituyentes); ArgentinaFil: Stoliar, Pablo Alberto. Universidad Nacional de San Martín. Escuela de Ciencia y Tecnología; Argentina. Comisión Nacional de Energía Atómica. Gerencia del Área de Investigaciones y Aplicaciones No Nucleares. Gerencia de Física (Centro Atómico Constituyentes); ArgentinaFil: Rubi, Diego. Universidad Nacional de San Martín. Escuela de Ciencia y Tecnología; Argentina. Comisión Nacional de Energía Atómica. Gerencia del Área de Investigaciones y Aplicaciones No Nucleares. Gerencia de Física (Centro Atómico Constituyentes); Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas; ArgentinaFil: Levy, Pablo Eduardo. Comisión Nacional de Energía Atómica. Gerencia del Área de Investigaciones y Aplicaciones No Nucleares. Gerencia de Física (Centro Atómico Constituyentes); Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentin

Two resistive switching regimes in thin film manganite memory devices on silicon

Bipolar resistive switching in low cost n-Si/La2/3Ca1/3MnO3/M (M¼TiþCu) devices was investigated. For low SET compliance currents (CC), an interfacial-related resistive switching mechanism, associated to the migration of oxygen vacancies close to the manganite/metal interface, is operative. Simulations using the voltage enhanced oxygen vacancies drift model validate our experimental results. When further increasing the CC, we have observed the onset of a second, filamentary, resistive switching regime with a concomitant collapse of the ON/OFF ratio. We finally demonstrate that it is possible to delay the onset of the filamentary regime by controlling the film thickness.Fil: Rubi, Diego. Universidad Nacional de San Martín. Escuela de Ciencia y Tecnología; Argentina. Comisión Nacional de Energía Atómica; Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas; ArgentinaFil: Tesler, Federico Ariel. Comisión Nacional de Energía Atómica; Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas; ArgentinaFil: Alposta, I.. Comisión Nacional de Energía Atómica; ArgentinaFil: Kalstein, Ariel. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina. Comisión Nacional de Energía Atómica; ArgentinaFil: Ghenzi, Néstor. Comisión Nacional de Energía Atómica; Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas; ArgentinaFil: Gomez Marlasca, F.. Comisión Nacional de Energía Atómica; ArgentinaFil: Rozenberg, Marcelo Javier. Universite Paris Sud; Francia. Universidad de Buenos Aires. Facultad de Ciencias Exactas y Naturales. Departamento de Física; Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas; ArgentinaFil: Levy, Pablo Eduardo. Comisión Nacional de Energía Atómica; Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentin