Irradiated Single Crystal Chemical Vapor Deposition Diamond Characterized with Various Ionizing Particles

The radiation hardness of diamond at the sensor level is studied by irradiating five sensors and studying them with various particle sources, without making any modifications to the sensors in between. The electronics used in the characterization is not irradiated to ensure that any observed effect is merely due to the sensor. Three sensors have received a fluence of 10 (14) protons cm(-2) and two 5 center dot 10 (15) protons cm(-2). At the lower fluence, the impact on the charge collection efficiency is very small, when the applied bias voltage is above 1 V mu m(-1). For the higher fluence, the charge collection efficiency is lower than expected based on earlier studies of diamond radiation hardness on the substrate level. Furthermore, it is noticed that the irradiation has a stronger impact on the signal amplitude recorded with a fast timing than with a charge sensitive amplifier.Peer reviewe

Characterization of Heavily Irradiated Dielectrics for Pixel Sensors Coupling Insulator Applications

An increase in the radiation levels during the high-luminosity operation of the Large Hadron Collider calls for the development of silicon-based pixel detectors that are used for particle tracking and vertex reconstruction. Unlike the conventionally used conductively coupled (DC-coupled) detectors that are prone to an increment in leakage currents due to radiation, capacitively coupled (AC-coupled) detectors are anticipated to be in operation in future collider experiments suitable for tracking purposes. The implementation of AC-coupling to micro-scale pixel sensor areas enables one to provide an enhanced isolation of radiation-induced leakage currents. The motivation of this study is the development of new generation capacitively coupled (AC-coupled) pixel sensors with coupling insulators having good dielectric strength and radiation hardness simultaneously. The AC-coupling insulator thin films were aluminum oxide (Al2O3) and hafnium oxide (HfO2) grown by the atomic layer deposition (ALD) method. A comparison study was performed based on the dielectric material used in MOS, MOSFET, and AC-coupled pixel prototypes processed on high resistivity p-type Magnetic Czochralski silicon (MCz-Si) substrates. Post-irradiation studies with 10 MeV protons up to a fluence of 10(15) protons/cm(2) suggest HfO2 to be a better candidate as it provides higher sensitivity with negative charge accumulation on irradiation. Furthermore, even though the nature of the dielectric does not affect the electric field within the AC-coupled pixel sensor, samples with HfO2 are comparatively less susceptible to undergo an early breakdown due to irradiation. Edge-transient current technique (e-TCT) measurements show a prominent double-junction effect as expected in heavily irradiated p-type detectors, in accordance with the simulation studies.Peer reviewe

Multispectral photon-counting for medical imaging and beam characterization - A project review

Central focus of the MPMIB project – funded via the Academy of Finland’s RADDESS 2018–2021 programme – has been research towards a next-generation radiation detection system operating in a photon-counting (PC) multispectral mode: The extraction of energy spectrum per detector pixel data will lead to better efficacy in medical imaging with ionizing radiation. Therefore, it can be an important asset for diagnostic imaging and radiotherapy, enabling better diagnostic outcome with lower radiation dose as well as more versatile characterization of the radiation beam, leading for example to more accurate patient dosimetry. We present our approach of fabricating direct-conversion detectors based on cadmium telluride (CdTe) semiconductor material hybridized with PC mode capable application-specific integrated circuits (ASICs), and will give a review on our achievements, challenges and lessons learned. The CdTe crystals were processed at Micronova, Finland’s national research infrastructure for micro- and nanotechnology, employing techniques such as surface passivation via atomic layer deposition, and flip chip bonding of processed sensors to ASIC. Although CdTe has excellent photon radiation absorption properties, it is a brittle material that can include large concentrations of defects. We will therefore also emphasize our quality assessment of CdTe crystals and processed detectors, and present experimental data obtained with prototype detectors in X-ray and Co-60 beams at a standards laboratoryPeer reviewe

Effect of Thermal Donors Induced in Bulk and Variation in P-stop Dose on the No-gain Region Width Measurements of LGADs

Peer reviewe

TCF4 trinucleotide repeat expansion in Swedish cases with Fuchs’ endothelial corneal dystrophy

Purpose: Fuchs' endothelial corneal dystrophy (FECD) has been considered a genetically heterogeneous disease but is increasingly associated with the transcription factor 4 (TCF4) gene. This study investigates the prevalence of the cytosine-thymine-guanine (CTG)n repeat expansion in TCF4 among FECD patients in northern Sweden coupled to the phenotype. Methods: Blood samples were collected from 85 FECD cases at different stages. Short tandem repeat PCR and triplet repeat-primed PCR were applied in order to determine TCF4 (CTG)n genotype. Results: A (CTG)n repeat expansion (n &gt; 50) in TCF4 was identified in 76 of 85 FECD cases (89.4%) and in four of 102 controls (3.9%). The median (CTG)n repeat length was 81 (IQR 39.3) in mild FECD and 87 (IQR 13.0) in severe FECD (p = 0.01). A higher number of (CTG)n repeats in an expanded TCF4 allele increased the probability of severe FECD. Other ocular surgery was overrepresented in FECD cases without a (CTG)n repeat expansion (44.4%, n = 4) compared with 3.9% (n = 3) in FECD cases with an (CTG)n repeat expansion (p &lt; 0.001). Conclusion: In northern Sweden, the FECD phenotype is associated with (CTG)n expansion in the TCF4 gene, with nearly 90% of patients being hetero- or homozygous for (CTG)n expansion over 50 repeats. Furthermore, the severity of FECD was associated with the repeat length in the TCF4 gene. Ocular surgery might act as an environmental factor explaining the clinical disease in FECD without a repeat expansion in TCF4.Previously included in thesis in manuscript form.</p

Erythrocyte Flow Cytometric Analysis in Congenital Dyserythropoietic Anemia Type III-Evaluation of Eosin-5´-Maleimide, CD55, and CD59

Introduction: Flow cytometry with eosin-5´-maleimide (EMA), anti-CD55 and anti-CD59 is commonly used when investigating non-autoimmune hemolytic anemias. Reduced fluorescence of EMA, typically detected in hereditary spherocytosis is also seen in congenital dyserythropoietic anemia type II (CDA II). Reduction of CD55 and CD59 characterizes paroxysmal nocturnal hemoglobinuria (PNH). We studied the flow cytometric profile of EMA, CD55 and CD59 on erythrocytes in congenital dyserythropoietic anemia type III (CDA III).  Methods: Erythrocytes from 16 CDA III positive individuals, 14 CDA III negative relatives and three normal controls per assay were studied with flow cytometry after EMA staining. Flow cytometry after anti-CD55 and anti- CD59 was performed on erythrocytes from 12 CDA III positive and 7 CDA III negative relatives with one normal control per assay.  Results: CDA III - erythrocytes exhibited marginally stronger fluorescence after EMA-staining than normal controls. Correlation between EMA fluorescence and erythrocyte volume was confirmed. CDA III subjects did not differ from normal controls concerning CD55 and CD59.  Conclusion: The results of the present study indicate no abnormality of the erythrocyte membrane in CDA III and show that standard flow cytometry cannot be used to discriminate between CDA III and normal controls.

Lower fractions of TCF4 transcripts spanning over the CTG18.1 trinucleotide repeat in human corneal endothelium

Fuchs’ endothelial corneal dystrophy (FECD) is a bilateral disease of the cornea caused by gradual loss of corneal endothelial cells. Late-onset FECD is strongly associated with the CTG18.1 trinucleotide repeat expansion in the Transcription Factor 4 gene (TCF4), which forms RNA nuclear foci in corneal endothelial cells. To date, 46 RefSeq transcripts of TCF4 are annotated by the National Center of Biotechnology information (NCBI), however the effect of the CTG18.1 expansion on expression of alternative TCF4 transcripts is not completely understood. To investigate this, we used droplet digital PCR for quantification of TCF4 transcripts spanning over the CTG18.1 and transcripts with transcription start sites immediately downstream of the CTG18.1. TCF4 expression was analysed in corneal endothelium and in whole blood of FECD patients with and without CTG18.1 expansion, in non-FECD controls without CTG18.1 expansion, and in five additional control tissues. Subtle changes in transcription levels in groups of TCF4 transcripts were detected. In corneal endothelium, we found a lower fraction of transcripts spanning over the CTG18.1 tract compared to all other tissues investigated

Cadmium Telluride X-ray pad detectors with different passivation dielectrics

The suitability of two low-temperature dielectric passivation layer processes for the fabrication of Cadmium Telluride (CdTe) X-ray detectors has been investigated. The CdTe crystals with a size of (10 10 1) mm were coated with sputtered aluminum nitride (AlN) or with aluminum oxide (AlO) grown by the atomic layer deposition (ALD) method. The metallization contacts of the detectors were made by titanium tungsten (TiW) and gold (Au) metal sputtering depositions. The pad detector structures were patterned with proximity-contactless photolithography techniques followed by lift-off patterning of the electrodes. The detector properties were characterized at room temperature by Transient Current Technique (TCT) measurements. The obtained results were compared and verified by numerical TCAD simulations of the detector response. Our results indicate that higher signal charge was collected from samples with AlO. Furthermore, no significant laser light induced signal decay by CdTe material polarization was observed within order of 30 min of continuous illumination.Peer reviewe

Uvajanje koncepta učeče se organizacije v trgovinsko podjetje

Background: Congenital dyserythropoietic anemia type III (CDA III) can be caused by mutation in KIF23. CDA III differs from CDA I and II in the sense that secondary hemochromatosis has not been reported. However, we have observed elevated serum ferritin in a CDA III family. Since primary hemochromatosis is common in Northern Europe we decided to screen the family for HFE mutations. Aim: Study clinical appearance and prevalence of HFE gene mutations, C282Y and H63D, in a CDA III family.  Methods: DNA from 37 CDA III patients and 21 non-affected siblings was genotyped. Iron status from EDTA plasma was measured in 32 of the CDA III patients and 18 of the non-affected siblings. Results: Out of 37 CDA III patients, 18 carried heterozygous HFE mutations and six were compound heterozygotes. Out of 21 CDA III negative siblings, nine had heterozygous HFE mutations, two were homozygous (one H63D and one C282Y), and two were compound heterozygous. None of the patients with wt HFE, regardless of CDA III status, suffered from iron overload. Four patients with HFE mutations needed treatment with phlebotomy to normalize ferritin and transferrin iron saturation; one CDA III negative patient with homozygous C282Y, two CDA III patients with heterozygous HFE mutations and one CDA III case with compound heterozygosity. Conclusion: HFE mutations were found in 65 % of CDA III patients and in 62 % of their CDA III negative siblings. Heterozygous HFE mutation, C282Y and even H63D, can cause iron overload when occurring concomitantly with CDA III