The Indus-Delta Country. Review

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Thermoelectric prospects of nanomaterials with spin-orbit surface bands

Nanostructured composites and nanowire arrays of traditional thermoelectrics like Bi, Bi(1-x)Sb(x) and Bi(2)Te(3) have metallic Rashba surface spin-orbit bands featuring high mobilities rivaling that of the bulk for which topological insulator behavior has been proposed. Nearly pure surface electronic transport has been observed at low temperatures in Bi nanowires with diameter around the critical diameter, 50 nm, for the semimetal-to semiconductor transition. The surface contributes strongly to the thermopower, actually dominating for temperatures T < 100 K in these nanowires. The surface thermopower was found to be -1 T microvolt/(K^2), a value that is consistent with theory. We show that surface electronic transport together with boundary phonon scattering leads to enhanced thermoelectric performance at low temperatures of Bi nanowire arrays. We compare with bulk n-BiSb alloys, optimized CsBi(4)Te(6) and optimized Bi(2)Te(3). Surface dominated electronic transport can be expected in nanomaterials of the other traditional thermoelectrics.Comment: 18 pages, 3 figure

Pressure effects on the transport coefficients of Ba(Fe1-xCox)2As2

We report the temperature dependence of the resistivity and thermoelectric power under hydrostatic pressure of the itinerant antiferromagnet BaFe2As2 and the electron-doped superconductor Ba(Fe0.9Co0.1)2As2. We observe a hole-like contribution to the thermopower below the structural-magnetic transition in the parent compound that is suppressed in magnitude and temperature with pressure. Pressure increases the contribution of electrons to transport in both the doped and undoped compound. In the 10% Co-doped sample, we used a two-band model for thermopower to estimate the carrier concentrations and determine the effect of pressure on the band structure

Thermoelectric properties of the bismuth telluride nanowires in the constant-relaxation-time approximation

Electronic structure of bismuth telluride nanowires with the growth directions [110] and [015] is studied in the framework of anisotropic effective mass method using the parabolic band approximation. The components of the electron and hole effective mass tensor for six valleys are calculated for both growth directions. For a square nanowire, in the temperature range from 77 K to 500 K, the dependence of the Seebeck coefficient, the electron thermal and electrical conductivity as well as the figure of merit ZT on the nanowire thickness and on the excess hole concentration are investigated in the constant-relaxation-time approximation. The carrier confinement is shown to play essential role for square nanowires with thickness less than 30 nm. The confinement decreases both the carrier concentration and the thermal conductivity but increases the maximum value of Seebeck coefficient in contrast to the excess holes (impurities). The confinement effect is stronger for the direction [015] than for the direction [110] due to the carrier mass difference for these directions. The carrier confinement increases maximum value of ZT and shifts it towards high temperatures. For the p-type bismuth telluride nanowires with growth direction [110], the maximum value of the figure of merit is equal to 1.3, 1.6, and 2.8, correspondingly, at temperatures 310 K, 390 K, 480 K and the nanowire thicknesses 30 nm, 15 nm, and 7 nm. At the room temperature, the figure of merit equals 1.2, 1.3, and 1.7, respectively.Comment: 13 pages, 7 figures, 2 tables, typos added, added references for sections 2-

Lorenz function of Bi2_{2}Te3_{3}/Sb2_{2}Te3_{3} superlattices

Combining first principles density functional theory and semi-classical Boltzmann transport, the anisotropic Lorenz function was studied for thermoelectric Bi$_{2}$Te$_{3}$/Sb$_{2}$Te$_{3}$ superlattices and their bulk constituents. It was found that already for the bulk materials Bi$_{2}$Te$_{3}$ and Sb$_{2}$Te$_{3}$, the Lorenz function is not a pellucid function on charge carrier concentration and temperature. For electron-doped Bi$_{2}$Te$_{3}$/Sb$_{2}$Te$_{3}$ superlattices large oscillatory deviations for the Lorenz function from the metallic limit were found even at high charge carrier concentrations. The latter can be referred to quantum well effects, which occur at distinct superlattice periods

Improved Thermoelectric Cooling Based on the Thomson Effect

Traditional thermoelectric Peltier coolers exhibit a cooling limit which is primarily determined by the figure of merit, zT. Rather than a fundamental thermodynamic limit, this bound can be traced to the difficulty of maintaining thermoelectric compatibility. Self-compatibility locally maximizes the cooler's coefficient of performance for a given zT and can be achieved by adjusting the relative ratio of the thermoelectric transport properties that make up zT. In this study, we investigate the theoretical performance of thermoelectric coolers that maintain self-compatibility across the device. We find such a device behaves very differently from a Peltier cooler, and term self-compatible coolers "Thomson coolers" when the Fourier heat divergence is dominated by the Thomson, as opposed to the Joule, term. A Thomson cooler requires an exponentially rising Seebeck coefficient with increasing temperature, while traditional Peltier coolers, such as those used commercially, have comparatively minimal change in Seebeck coefficient with temperature. When reasonable material property bounds are placed on the thermoelectric leg, the Thomson cooler is predicted to achieve approximately twice the maximum temperature drop of a traditional Peltier cooler with equivalent figure of merit (zT). We anticipate the development of Thomson coolers will ultimately lead to solid state cooling to cryogenic temperatures.Comment: The Manuscript has been revised for publication in PR

A simple model for the vibrational modes in honeycomb lattices

The classical lattice dynamics of honeycomb lattices is studied in the harmonic approximation. Interactions between nearest neighbors are represented by springs connecting them. A short and necessary introduction of the lattice structure is presented. The dynamical matrix of the vibrational modes is then derived, and its eigenvalue problem is solved analytically. The solution may provide deeper insight into the nature of the vibrational modes. Numerical results for the vibrational frequencies are presented. To show that how effective our method used for the case of honeycomb lattice is, we also apply it to triangular and square lattice structures. A few suggested problems are listed in the concluding section.Comment: 9 pages, 12 figures, submitted to American Journal of Physic

An efficient algorithm to calculate intrinsic thermoelectric parameters based on Landauer approach

The Landauer approach provides a conceptually simple way to calculate the intrinsic thermoelectric (TE) parameters of materials from the ballistic to the diffusive transport regime. This method relies on the calculation of the number of propagating modes and the scattering rate for each mode. The modes are calculated from the energy dispersion (E(k)) of the materials which require heavy computation and often supply energy relation on sparse momentum (k) grids. Here an efficient method to calculate the distribution of modes (DOM) from a given E(k) relationship is presented. The main features of this algorithm are, (i) its ability to work on sparse dispersion data, and (ii) creation of an energy grid for the DOM that is almost independent of the dispersion data therefore allowing for efficient and fast calculation of TE parameters. The inclusion of scattering effects is also straight forward. The effect of k-grid sparsity on the compute time for DOM and on the sensitivity of the calculated TE results are provided. The algorithm calculates the TE parameters within 5% accuracy when the K-grid sparsity is increased up to 60% for all the dimensions (3D, 2D and 1D). The time taken for the DOM calculation is strongly influenced by the transverse K density (K perpendicular to transport direction) but is almost independent of the transport K density (along the transport direction). The DOM and TE results from the algorithm are bench-marked with, (i) analytical calculations for parabolic bands, and (ii) realistic electronic and phonon results for $Bi_{2}Te_{3}$.Comment: 16 Figures, 3 Tables, submitted to Journal of Computational electronic

Electrochemically copper-doped bismuth tellurium selenide thin films

We report the first results of a study on electrochemically doped copper bismuth tellurium selenide thin films electrodeposited from aqueous nitric acid electrolytes containing up to 2 mM of Cu(NO3)2. The effect of Cu(NO3)2 concentration on the composition, structure and thermoelectric properties of the bismuth tellurium selenide films is investigated by scanning electron microscopy, energy-dispersive X-ray spectroscopy, X-ray diffraction and Seebeck and Hall effect measurements. A Cu(NO3)2 concentration of 1.5 mM is found to offer a Seebeck coefficient of up to −390 μV K−1 at room temperature, which is the highest reported to date for an electrodeposited bismuth tellurium compound