200 research outputs found

    Strain Relaxation in Compositionally Graded InGaAs/GaAs Heterostructures

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    Epilayer strain relaxation in the InGaAs/GaAs system occurs via two mechanisms, plastic deformation and/or surface roughening. Under conditions of two-dimensional growth, we find that compositionally graded InGaAs/GaAs (001) multi-layer buffer structures will plastically deform with \u3c 110 \u3e misfit dislocations approaching 100% strain relaxation. At higher growth temperatures, large-amplitude roughening is observed preferentially along the [110] direction, and the strain relaxation becomes asymmetric in the \u3c 110 \u3e directions. In single epilayers, the symmetry of the strain relaxation is dependent on the magnitude of the substrate offcut angle. In all cases, the epilayers develop a tilt about an in-plane axis in proportion to and opposite in direction to the substrate offcut. With roughening, there is also a change in the orientation of the tilt axis such that only the dislocations with [110] line directions develop a preferred tilt component. These results illustrate the importance of surface steps and morphologies to strain relaxation and perhaps offer clues to the identification of the dislocation formation mechanisms at these interfaces

    Homologous self-assembled superlattices: What causes their periodic polarity switching? Review, model, and experimental test

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    Quantum semiconductor structures are commonly achieved by bandgap engineering that relies on the ability to switch from one semiconductor to another during their growth. Growth of a superlattice is typically demanding technologically. In contrast, accumulated evidence points to a tendency among a certain class of multiple-cation binary oxides to self-assemble spontaneously as superlattice structures. This class has been dubbed the homologous superlattices. For a famous example, when a mixture of indium and zinc is oxidized, the phases of In-O and ZnO separate in an orderly periodic manner, along the ZnO polar axis, with polarity inversion taking place between consecutive ZnO sections. As we review here, the same structure has been observed when the indium was replaced with other metals, and perhaps even in ZnO alone. This peculiar self-assembled structure has been attracting research over the past decade. The purpose of this study is to gain understanding of the physics underlying the formation of this unique structure. Here, we first provide an extensive review of the accumulated literature on these spontaneously-formed structures and then propose an explanation for the long-standing mystery of this intriguing self-assembly in the form of an electrostatic growth phenomenon and test the proposed model on experimental data

    X-ray diffraction studies of GaN p-i-n structures for high power electronics

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    We have investigated the influence of the ambient exposure and/or ICP etching on the structure and properties of GaN p-i-n structures for high power electronics. To quantify the concentration of various native and extrinsic point defects, we utilize a combination of ion beam analyses in conjunction with x-ray diffraction. The full width at half max (FWHM) of phi and omega scans were used to quantify the mosaicity and threading dislocation (TD) densities at the p-i interfaces. The lowest densities of c-type and highest densities a-type TD components are observed for the “in-situ” GaN structure, which also produces the highest interfacial donor-acceptor pair (DAP) cathodoluminescence (CL) emissions. Interestingly, elastic recoil detection analysis (ERDA) and Rutherford backscattering spectroscopy reveal the lowest interfacial [H] but the highest fraction of displaced Ga atoms, suggesting efficient incorporation of MgGa in the in-situ structure. On the other hand, for the ex-situ structures, minimal interfacial [H] is also observed, but the lowest interfacial NBE and DAP CL emission is apparent as well as the highest density of c-type TD components. The relationship between interfacial [H], displaced Ga, CL emission features, and c- and a-type dislocation densities will be discussed.http://deepblue.lib.umich.edu/bitstream/2027.42/169564/1/zimmerman-alex-capstone-report.pdfhttp://deepblue.lib.umich.edu/bitstream/2027.42/169564/2/Zimmerman-Alex-Honors-Capstone-Poster.pd

    Patterns of Human Herpesvirus-8 Oral Shedding among Diverse Cohorts of Human Herpesvirus-8 Seropositive Persons

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    Human herpesvirus-8 (HHV-8), the etiologic agent of Kaposi sarcoma (KS), establishes lifelong latent infection with periodic lytic replication (“shedding”) at mucosal sites, especially the oropharynx. Patterns of HHV-8 shedding are not well understood, and require elucidation to better predict risk of HHV-8 related malignancies in those infected. We sought to characterize patterns of HHV-8 oropharyngeal shedding among diverse cohorts that enrolled HHV-8 seropositive persons

    Magna Carta: History, context and influence: Papers delivered at Peking University on the 800th anniversary of Magna Carta

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    This book examines the history and influence of Magna Carta in British and American history. In a series of essays written by notable British specialists, it considers the origins of the document in the political and religious contexts of the thirteenth century, the relevance of its principles to the seventeenth century disputes that led to the Civil War, the uses made of Magna Carta to justify the American Revolution, and its inspiration of the radical-democratic movement in Britain in the early nineteenth century. The introductory essay considers the celebration of Magna Carta's 800th anniversary in 2015 in relation to ceremonials and remembrance in Britain in general. Given as papers to a joint conference of British and Chinese historians in Beijing in 2015, these essays provide a clear and insightful overview of the origins and impact of a medieval document that has shaped the history of the world

    Asymmetric 3D Elasticâ Plastic Strainâ Modulated Electron Energy Structure in Monolayer Graphene by Laser Shocking

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    Graphene has a great potential to replace silicon in prospective semiconductor industries due to its outstanding electronic and transport properties; nonetheless, its lack of energy bandgap is a substantial limitation for practical applications. To date, straining graphene to break its lattice symmetry is perhaps the most efficient approach toward realizing bandgap tunability in graphene. However, due to the weak lattice deformation induced by uniaxial or inâ plane shear strain, most strained graphene studies have yielded bandgaps <1 eV. In this work, a modulated inhomogeneous local asymmetric elasticâ plastic straining is reported that utilizes GPaâ level laser shocking at a high strain rate (dε/dt) â 106â 107 sâ 1, with excellent formability, inducing tunable bandgaps in graphene of up to 2.1 eV, as determined by scanning tunneling spectroscopy. Highâ resolution imaging and Raman spectroscopy reveal strainâ induced modifications to the atomic and electronic structure in graphene and firstâ principles simulations predict the measured bandgap openings. Laser shock modulation of semimetallic graphene to a semiconducting material with controllable bandgap has the potential to benefit the electronic and optoelectronic industries.Both the bandgap structure and the Fermi level of monolayer graphene are modulated using an easy and effective optomechanical method. Laserâ shockâ induced 3D nanoshaping enables an asymmetric elasticâ plastic straining of graphene, resulting in a wide graphene bandgap of over 2.1 eV and a wide Fermi level adjustment range of 0.6 eV.Peer Reviewedhttps://deepblue.lib.umich.edu/bitstream/2027.42/149335/1/adma201900597.pdfhttps://deepblue.lib.umich.edu/bitstream/2027.42/149335/2/adma201900597-sup-0001-S1.pdfhttps://deepblue.lib.umich.edu/bitstream/2027.42/149335/3/adma201900597_am.pd

    Site-specific phosphorylation and caspase cleavage of GFAP are new markers of Alexander Disease severity

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    Alexander Disease (AxD) is a fatal neurodegenerative disorder caused by mutations in glial fibrillary acidic protein (GFAP), which supports the structural integrity of astrocytes. Over 70 GFAP missense mutations cause AxD, but the mechanism linking different mutations to disease-relevant phenotypes remains unknown. We used AxD patient brain tissue and induced pluripotent stem cell (iPSC)-derived astrocytes to investigate the hypothesis that AxD-causing mutations perturb key post-translational modifications (PTMs) on GFAP. Our findings reveal selective phosphorylation of GFAP-Ser13 in patients who died young, independently of the mutation they carried. AxD iPSC-astrocytes accumulated pSer13-GFAP in cytoplasmic aggregates within deep nuclear invaginations, resembling the hallmark Rosenthal fibers observed in vivo. Ser13 phosphorylation facilitated GFAP aggregation and was associated with increased GFAP proteolysis by caspase-6. Furthermore, caspase-6 was selectively expressed in young AxD patients, and correlated with the presence of cleaved GFAP. We reveal a novel PTM signature linking different GFAP mutations in infantile AxD
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