My Journey Out Of... : How Women Narrate Their Religious Departures

The purpose of this dissertation is to analyze stories that don’t often get told or heard. Traditionally, nonreligious people have had to keep their lack of belief to themselves out of fear of persecution. In the literature review of this dissertation, I summarize previous scholarship about leaving religion. In an effort to learn about autobiographies written by nonreligious women, I utilize storytelling as a theoretical framework, located within the rhetorical uses of personal narratives, and ask: What are the types of challenges, experiences, and topics that nonreligious women include in their stories?; How do these autobiographies invite readers to understand personal accounts of religious departure?; and How do these autobiographies invite social change and consciousness raising? To answer these questions, I applied thematic narrative analysis, from a rhetorical perspective, as a way to discover the commonalities amongst the stories, as well as the unique characteristics that each story possesses. While each woman had a unique story, there were five common themes that emerged among the memoirs: family, intellectual, relational, sociocultural, and professional. Inspired by the language of the “women’s sphere,” I labeled each of the themes as a realm in the “sphere of life” with hope that the sphere of life can help explain how religion influences a person’s life. I discovered that, even though some of the women lost some relationships with family and friends, all of the women mentioned that they are happier now that they are being true to themselves. The authors also mentioned that it is important to be at peace with who they are since this is likely their one and only life. With that in mind, it is important to have choice and authenticity in one’s life. Finally, this study demonstrated the power of storytelling and how autobiographies can invite social and attitudinal change

Cross-Plattform Development einer Mobile Business Application am Beispiel einer Tourismus Anwendung

Möchte man eine mobile Applikation für ein mobiles Betriebssystem entwickeln, so programmiert und kompiliert man diese mit dem jeweiligen SDK der Plattform und hinterlegt sie dann in dem jeweiligen App Store. Um sich den Aufwand der mehrfachen Entwicklung für die unterschiedlichen Plattformen zu sparen, entwickelt man eine Cross-Plattform-Anwendung, also eine Anwendung, die unabhängig vom Betriebssystem des mobilen Endgerätes ist. Dafür gibt es inzwischen verschiedene Frameworks, die diese Entwicklungsmöglichkeit unterstützen. Einige davon werden in dieser Arbeit vorgestellt. Diese Arbeit behandelt die Entwicklung einer plattformunabhängigen Applikation für mobile Endgeräte anhand eines solchen Frameworks. Als Anwendungszenario wurde eine Tourismus-Applikation gewählt, welche als Client Informationen wie Nachrichten, Veranstaltungen, Bürgermeldungen und Sehenswürdigkeiten abruft und auf dem mobilen Endgerät des Nutzers darstellt. Serverseitig wird hierzu eine REST - API benötigt, die den Zugriff auf die bereits bestehende Datenbank regelt, in welcher die Daten für die einzelnen Kommunen vorliegen. Die Entwicklung der REST-Schnittstelle ist ebenfalls Gegenstand dieser Arbeit. Anschließend wird die Cross-Plattform-Entwicklung vorgestellt. Im Fazit der Arbeit lässt sich feststellen, dass eine solche plattformunabhängige Entwicklung viele Vorteile mit sich bringt und diese auch in der nächsten Zeit noch zunehmen werden, andererseits wird jedoch vieles dennoch weiterhin mit nativen Applikationen programmiert werden, da solche Cross-Plattform-Entwicklungsmöglichkeiten noch lange nicht an die Performance und die Möglichkeiten der nativen Entwicklung herankommen werden

Electronic properties and dopant pairing behavior of manganese in boron-doped silicon

Boron-doped silicon wafers implanted with low doses of manganese have been analyzed by means of deep-level transient spectroscopy(DLTS), injection-dependent lifetime spectroscopy, and temperature-dependent lifetime spectroscopy. While DLTSmeasurements allow the defect levels and majority carrier capture cross sections to be determined, the lifetime spectroscopy techniques allow analysis of the dominant recombination levels and the corresponding ratios of the capture cross sections. Interstitialmanganese and manganese-boron pairs were found to coexist, and their defect parameters have been investigated.One of the authors T.R. gratefully acknowledges a scholarship of the German Federal Environmental Foundation Deutsche Bundesstiftung Umwelt. Another D.M. is supported by an Australian Research Council QEII Fellowship

Physical mechanisms of boron diffusion gettering of iron in silicon

We have studied the boron diffusion gettering (BDG) of iron in single crystalline silicon. The results show that iron is gettered efficiently by electrically inactive boron, which leads to gettering efficiencies comparable to phosphorus diffusion gettering (PDG). In addition we discuss the different physical mechanisms behind BDG. We also consider the possibilities of using boron diffusion gettering in solar cell fabrication and discuss the role of boron and iron concentration in the optimization of gettering efficiency.Peer reviewe

Solstice: An Electronic Journal of Geography and Mathematics: Vol. 32, No. 2

Peer Reviewedhttp://deepblue.lib.umich.edu/bitstream/2027.42/171078/2/SolsticeVolumeXXXIINumber2.pdfhttp://deepblue.lib.umich.edu/bitstream/2027.42/171078/4/AniTrig.gifhttp://deepblue.lib.umich.edu/bitstream/2027.42/171078/5/SLAwinebook.pdfhttp://deepblue.lib.umich.edu/bitstream/2027.42/171078/6/ChicagoKitchen.pdfhttp://deepblue.lib.umich.edu/bitstream/2027.42/171078/7/EmasLachTribute.pdfhttp://deepblue.lib.umich.edu/bitstream/2027.42/171078/8/GlunzDraftLargerArticle.pdfd0a18e86-7d9e-4669-812b-ead353cc4899b2c2c9fd-ee9d-4e83-89fe-dc520ef84368Description of SolsticeVolumeXXXIINumber2.pdf : Solstice, Vol. XXXII, No. 2.SEL

Variation of the layer thickness to study the electrical property of PECVD Al2O3 / c-Si interface

AbstractThis paper focusses in particular on the influence of the layer thickness on the passivation quality, the charge density and the interface defects of PECVD Al2O3 passivation layers on c-Si surfaces. The surface recombination velocity and the interface defect density are observed to increase by decreasing the layer thickness. However, the density of negative charges remains almost constant with values around 3 1012cm-2. An optimal passivation quality is obtained for thicknesses of 15nm and higher. A linear relation between surface recombination velocity and Dit was established, allowing the estimation of the electron capture cross section (σn ∼ 10-13cm-2).Additionally, we measured the capture cross section of holes and electrons using DLTS measurement. The results are found to be very similar to reported values for silicon dioxide. This supports the idea that the chemical passivation of crystalline silicon by Al2O3 is performed by the interstitial SiO2 layer

Numerical modeling of highly doped Si:P emitters based on Fermi–Dirac statistics and self-consistent material parameters

We have established a simulation model for phosphorus-doped silicon emitters using Fermi–Dirac statistics. Our model is based on a set of independently measured material parameters and on quantum mechanical calculations. In contrast to commonly applied models, which use Boltzmann statistics and apparent band-gap narrowing data, we use Fermi–Dirac statistics and theoretically derived band shifts, and therefore we account for the degeneracy effects on a physically sounder basis. This leads to unprecedented consistency and precision even at very high dopant densities. We also derive the hole surface recombination velocity parameter Spo by applying our model to a broad range of measurements of the emitter saturation current density. Despite small differences in oxide quality among various laboratories, Spo generally increases for all of them in a very similar manner at high surfacedoping densities Nsurf. Pyramidal texturing generally increases Spo by a factor of five. The frequently used forming gas anneal lowers Spo mainly in low-doped emitters, while an aluminumanneal(Al deposit followed by a heat cycle) lowers Spo at all Nsurf.P.P.A. is on a Postdoctoral Fellowship from the Australian Research Council ~ARC!. The Center for Photovoltaic Engineering is supported by ARC’s Special Research Centres Scheme. A.C. and M.K. also acknowledge funding by the ARC