Broadband twin tail fins antenna on HR SOI silicon substrate for 60GHz applications

International audienceThis paper presents a broadband antenna on HR SOI CMOS technology for co-integration with power amplifier (PA) or low noise amplifier (LNA). In a system on Chip (SoC) approach, the co-design of the antenna and Integrated Circuits (ICs) on a same silicon substrate is a convenient solution to suppress lossy matching networks and to reduce the radio front-end cost. The proposed antenna presents a simulated gain greater than 5 dBi and a simulated |S11|dB below -10 dB over a 30 GHz frequency band [53-80 GHz]. This concept has been validated on Alumina substrate with a good agreement between measurement and simulation

Multiple-slot antennas on high resistivity silicon substrate for impedance control in a co-design with amplifier scheme

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94 GHz silicon co-integrated LNA and Antenna in a mm-wave dedicated BiCMOS technology

International audienceA co-integrated Low Noise Amplifier (LNA) with a dipole antenna is designed considering a millimeter-wave dedicated BiCMOS technology. The targeted application is a 94 GHz passive imaging for security applications. The LNA is based on a high-speed SiGe:C 130 nm HBT. The interest of the co-integration on a common silicon substrate is demonstrated through the decrease of insertion losses between the antenna and the amplifier. The capability of the BiCMOS9MW technology is illustrated to achieve this co-integration reaching a total gain of 3.0 dB (Gantenna + GLNA) for a power consumption of 11 mW, in a single-stage LNA configuration. A two-stage configuration achieves a total gain of 8.5 dB with a power consumption of 21 mW

Antenne "double ailettes" très large bande intégrée sur substrat silicium SOI HR pour des applications millimétriques

National audienceDans cet article, une antenne large bande en technologie CMOS SOI HR est présentée dans le but d'une co-intégration avec l'amplificateur de puissance (PA) ou l'amplificateur faible bruit (LNA). Dans une approche SoC (System on Chip), la co-conception de l'antenne et des circuits intégrés sur un même substrat silicium est une solution permettant de réduireles pertes liées au réseau d'adaptation et de supprimer le coût d'assemblage. L'antenne proposée présente un gain simulé supérieur à 5dBi et une adaptation à -10dB sur une bande de fréquences de l'ordre de 30GHz. Ce concept a été validé sur un substrat alumine avec un bon accord entre la mesure et la simulation

Packaged hybrid Si-IPD tm antenna for 60GHz applications

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Miniaturized hybrid antenna combining Si and IPDtm technologies for 60GHz WLAN applications

International audienceThis paper presents the design of a packaged antenna including glass substrate. A square patch antenna is implemented on BiCMOS B9MW technology (Low Resistivity (LR) Si - p = 12 ohms.cm). The described solution solves the interconnection problem between Silicon Integrated Circuits (ICs) and the antenna. The excitation structure is integrated on Silicon substrate using conventional process, thus reducing insertion losses usually caused by flip-chip or assembling techniques. The second advantage of this solutions is the cointegration of the coupling slot with the RF front-end. This permits to match the antenna input impedance to the PA output impedance, with consequently improved power budget efficiency. This antenna achieves a simulated gain of 5dBi at 60GHz and a relative bandwidth of 8%. A preliminary antenna on alumina and glass substrates has been realized in order to verify the flipchip assembly process. The measurements results are in good agreement with simulation

Fully Integrated Interferometry-Based Reflectometer for High-Impedance Instrumentation

International audienceMicrowave imaging of nanoelectronic devices has turned a simple reflection coefficient measurement, usually carried out by a 50-Ω vector-network analyzer, into a high-impedance instrumentation challenge. Interferometry-based reflectometers (IBR) have been found to be successful solutions in addressing this challenge. However, such solutions do not consider instrumentation of high impedance and high frequency as well as minimization of environment variations in a comprehensive manner. In this paper, these aspects are addressed jointly through the proposal of a fully integrated IBR in the STMicroelectronics BiCMOS 55-nm technology. Three varactor samples having a capacitance ranging from 0.65 to 0.95 fF are measured at 17.6 GHz for demonstration. The fully integrated IBR achieved a magnitude error below -35 dB, a phase error below 0.03°, and an accuracy better than 59.7 aF. Moreover, C-V slope measurement error is better than 2.8 aF, which is ten times smaller than found in the state-of-the-art IBR. Such betterment is explained by the monolithic integration of IBR and device-under-test as implemented in this paper

Antenne millimétrique hybride Silicium-IPD pour applications WLAN à 60GHz

National audienceDans cet article, une antenne hybride Silicium-IPDtm est présentée. L'antenne consiste en l'implémentation d'une fente de couplage sur silicium et d'un patch sur verre. Cette solution permet de réduire les pertes d'interconnexion entre les circuits actifs sur silicium et l'élément rayonnant causée généralement par les techniques de report par flip-chip ou d'assemblage classiques. L'antenne atteint un gain simulé de 5dBi@. 60GHz est une bande passante relative de 8%. Cette solution a été validée sur substrats Alumine et RO3003tm avec des performances en accord avec les spécifications pour une application à 60GHz

Evaluation of micro laser sintering metal 3D-printing technology for the development of waveguide passive devices up to 325 GHz

International audienceIn this paper, we propose an assessment up to 325 GHz of Micro Laser Sintering (MLS) metal 3D-Printing technology in order to achieve lightweight and cost-effective millimeter wave (mmW) passive function. We first designed and manufactured a bended WR5 waveguide in order to assess achievable roughness and insertion loss. In a second step, an existing 240 GHz choke horn antenna design, previously manufactured using metal coated Stereo Lithography Apparatus (SLA) and Selective Laser Melting (SLM) technologies, has been prototyped using MLS. Measured performances of the MLS antenna prototype have been benchmarked with SLA and DMLS ones. Achieved performances are promising since without any post processing MLS compete up to 325 GHz with metal coated SLA technology while it enables a metallic part manufactured in a single piece