Influence of neonate's body position with and without a plastic blanket on body heat loss assessed from a thermal mannequin

International audienceThe present study aimed at assessing the net gain of body heat storage induced by a transparent plastic blanket draped over small premature neonates in the prone and the supine positions. Thermal stress is particularly important in premature and small-for-gestational-age infants characterized by high values of the ratio between skin surface area and body mass, the greater this ratio, the greater the body heat exchanges. The large skin permeability enhances body water loss. The risk of hypothermia is particularly increased at birth and during operations on naked neonates implying opening of the canopy (surgical operation, blood sampling and gastric aspiration). In the first day of life, the rate of evaporation can reach 100 g.h-1.m-2 in very preterm infants. To prevent the large amount of water loss it is sometimes recommended to cover the neonate with a plastic blanket. In closed incubator Fanaroff et al.(3) pointed out that a transparent plastic heat shield reduces the insensible water loss of 44 % in low birth weight neonates lower than 1250 g and postnatal age less than 10 days. For postnatal age greater than 10 days, the magnitude of this reduction was only 19 %. Bell et al.(2) also reported that the addition of a heat shield in an incubator decreased the water loss by 10 % in infants with mean birth weight of 1570 g. However the efficiency of this solution which depends on the physical environment but also on the inter individual difference in the ability to exchange heat with the environment remains questionable and the use of a plastic blanket is still a controversial topic. The total heat loss of premature infants depends on various factors such as gestational age, nutritional state, mean skin temperature, body hydromineral balance, vigilance state, metabolic rate and of the postnatal age which modifies the skin keratinisation. Thus, it is difficult to obtain homogeneous data base that takes into account all these factors and there are conflicting data on the effectiveness of plastic blanket. To rule out these confounding factors we use a sweating mannequin the advantage of which is that it measures directly the total heat loss with the environment without interference with these factors

Manufacture of Multijunction Solar Cell Devices

The present invention relates to a method for manufacturing a multijunction solar cell device comprising the steps of providing a first substrate; providing a second substrate having a lower surface and an upper surface; forming at least one first solar cell layer on the first substrate to obtain a first wafer structure; forming at least one second solar cell layer on the upper surface of the second substrate to obtain a second wafer structure; bonding the first wafer structure to the second wafer structure wherein the at least one first solar cell layer is bonded to the lower surface of the second substrate and removing the first substrate

Direct Bonding of Silicon to Platinum

International audienc

Ultrathin Ni Silicides with low contact resistance on Strained and Unstrained Silicon

Ultrathin Ni silicides were formed on silicon-on-insulator (SOI) and biaxially tensile strained SOI (SSOI) substrates. The Ni layer thickness crucially determines the silicide phase formation: With a 3-nm Ni layer, high-quality epitaxial NiSi2 layers were grown at temperatures > 450 degrees C, while NiSi was formed with a 5-nm-thick Ni layer. A very thin Pt interlayer, to incorporate Pt into NiSi, improves the thermal stability and the interface roughness and lowers the contact resistivity. The contact resistivity of epitaxial NiSi2 is about one order of magnitude lower than that of a NiSi layer on both As-and B-doped SOI and SSOI

Electrical characterization of strained and unstrained silicon nanowires with nickel silicide contacts

We present electrical characterization of nickel monosilicide (NiSi) contacts formed on strained and unstrained silicon nanowires (NWs), which were fabricated by top-down processing of initially As(+) implanted and activated strained and unstrained silicon-on-insulator (SOI) substrates. The resistivity of doped Si NWs and the contact resistivity of the NiSi to Si NW contacts are studied as functions of the As(+) ion implantation dose and the cross-sectional area of the wires. Strained silicon NWs show lower resistivity for all doping concentrations due to their enhanced electron mobility compared to the unstrained case. An increase in resistivity with decreasing cross section of the NWs was observed for all implantation doses. This is ascribed to the occurrence of dopant deactivation. Comparing the silicidation of uniaxially tensile strained and unstrained Si NWs shows no difference in silicidation speed and in contact resistivity between NiSi/Si NW. Contact resistivities as low as 1.2 x 10(-8) Omega cm(-2) were obtained for NiSi contacts to both strained and unstrained Si NWs. Compared to planar contacts, the NiSi/Si NW contact resistivity is two orders of magnitude lower