Silver Azide Nanoparticles Embedded into Silica as Energetic Nano-materials

Silver azide is a primary high explosive that can be initiated by different means. In this work, silver azide nanoparticles were obtained, embedded into silica, and further derivatized with biotin. TEM, DLS, and IR measurements were used to characterize the hybrid energetic nanoparticles. The hybrid nanoparticles are made from an explosive core (silver azide) and a shell (silica), to which has been attached through an organic linker a biological target vectot (biotin).These hybrid nanoparticles can be used as models to study smart energetic nano-materials.DOI: http://dx.doi.org/10.5755/j01.ms.21.3.6926</p

Electrical Properties of Epitaxial Ferroelectric Heterostructures

In the context of miniaturization of devices, ferroelectric materials are used as multifunctional materials for their well-known intrinsic properties, especially for the switching of polarization in an applied electric field. The high-quality epitaxial thin film structures are used for the possibility to study different effects as low dimensions, interface, strain and strain gradients on ferroelectric materials and other electric characteristics, also representing a possibility to obtain new phenomena and properties that can be used for development of new devices with different functionalities. This chapter is a summary of the ferroelectric and dielectric behaviour of epitaxial thin films of Pb(Zr,Ti)O3 (PZT) and BaTiO3 (BTO) obtained by pulsed laser deposition and the correlation with structural quality of the layers and with different electrostatic conditions induced either by electrodes or by the different interlayers. For this purpose in the first part, studies regarding the influence of the substrates and of different top electrodes are performed for Pb(Zr,Ti)O3 (PZT) 52/48. In the second part, we focused on artificial multiferroic structures from alternating layers of PZT 20/80 or BaTiO3 (BTO) as ferroelectric phase and CoFe2O4 (CFO) as magnetic material. We found that interface configuration and strain engineering could control ferroelectric hysteresis, the capacitance or the leakage current magnitude

Charge State Effects in Swift-Heavy-Ion-Irradiated Nanomaterials

The aim of this experimental work was to investigate the influence of the ion beam charge state on damage production in nanomaterials. To achieve this, we employed Raman spectroscopy, atomic force microscopy, and transmission electron microscopy to investigate nanomaterials irradiated by a 23 MeV I beam. We found a significant influence of the ion charge state on damage production in monolayer graphene, but found no evidence of this effect in bilayer and trilayer graphene, nor in graphite. Furthermore, we found no evidence of this effect in CaF2 and SiO2 nanocrystals irradiated with the same ion beam

Ferroelectric orthorhombic ZrO2 thin films achieved through nanosecond laser annealing

A new approach for the stabilization of the ferroelectric orthorhombic ZrO2 films is demonstrated through nanosecond laser annealing (NLA) of as-deposited Si/SiOx/W(14 nm)/ZrO2(8 nm)/W(22 nm), grown by ion beam sputtering at low temperatures. The NLA process optimization is guided by COMSOL multiphysics simulations. The films annealed under the optimized conditions reveal the presence of the orthorhombic phase, as confirmed by X-ray diffraction, electron backscatter diffraction, and transmission electron microscopy. Macroscopic polarization-electric field hysteresis loops show ferroelectric behavior, with saturation polarization of 12.8 mu C cm(-2), remnant polarization of 12.7 mu C cm(-2) and coercive field of 1.2 MV cm(-1). The films exhibit a wake-up effect that is attributed to the migration of point defects, such as oxygen vacancies, and/or a transition from nonferroelectric (monoclinic and tetragonal phase) to the ferroelectric orthorhombic phase. The capacitors demonstrate a stable polarization with an endurance of 6.0 x 10(5) cycles, demonstrating the potential of the NLA process for the fabrication of ferroelectric memory devices with high polarization, low coercive field, and high cycling stability.A.P.S.C. and M.C.I. contributed equally to this work. This work was supported by the Portuguese Foundation for Science and Technology (FCT) in the framework of the Strategic Funding Contract UIDB/04650/2020. This work has received funding from the European Union's Horizon 2020 research and innovation program under grant agreement No 958174 (M-ERA-NET3/0003/2021-NanOx4EStor). M. C. I. and C. G. acknowledge the financial support by a grant of the Ministry of Research, Innovation and Digitization, CNCS/CCCDI - UEFISCDI, project number COFUND-M-ERANET-3-NanOx4Estor, within PNCDI III and POC 332/390008/29.12.2020-SMIS 109522. The authors acknowledge the CERIC-ERIC Consortium for access to experimental facilities and financial support under proposals 20202037, 20202038, and 20192055. The authors would also like to thank Jose Santos for technical support in the Thin Film Laboratory at CF-UM-UP. J.L.M-D. thanks the ERC grant, EU-H2020-ERC-ADG #882929, EROS. And the Royal Academy of Engineering, grant CIET1819_24. MOH thanks the Herchel Smith foundation of Cambridge for a research fellowship. This work made use of the University of Cambridge Wolfson Electron Microscopy Suite

Ferroelectricity and negative piezoelectric coefficient in orthorhombic phase pure ZrO2 thin films

A new approach for epitaxial stabilisation of ferroelectric orthorhombic (o-) ZrO2 films with negative piezoelectric coefficient in ∼ 8nm thick films grown by ion-beam sputtering is demonstrated. Films on (011)-Nb:SrTiO3 gave the oriented o-phase, as confirmed by transmission electron microscopy and electron backscatter diffraction mapping, grazing incidence x-ray diffraction and Raman spectroscopy. Scanning probe microscopy techniques and macroscopic polarization-electric field hysteresis loops show ferroelectric behavior, with saturation polarization of ∼14.3 µC/cm2, remnant polarization of ∼9.3 µC/cm2 and coercive field ∼1.2 MV/cm. In contrast to the o-films grown on (011)-Nb:SrTiO3, films grown on (001)-Nb:SrTiO3 showed mixed monoclinic (m-) and o-phases causing an inferior remnant polarization of ∼4.8 µC/cm2, over 50% lower than the one observed for the film grown on (011)-Nb:SrTiO3. Density functional theory (DFT) calculations of the SrTiO3/ZrO2 interfaces support the experimental findings of a stable polar o-phase for growth on (011) Nb:SrTiO3, and they also explain the negative piezoelectric coefficient.This work was supported by: (i) the Portuguese Foundation for Science and Technology (FCT) in the framework of the Strategic Funding Contract UIDB/04650/2020 and (ii) Project NECL - NORTE-01-0145-FEDER-022096 and Project UID/NAN/50024/2019. This work has received funding from the European Union's Horizon 2020 research and innovation programme under grant agreement No 958174 (M-ERA-NET3/0003/2021 - NanOx4EStor). This work was also developed within the scope of the project CICECO-Aveiro Institute of Materials, UIDB/50011/2020 & UIDP/50011/2020, financed by national funds through the Portuguese Foundation for Science and Technology/MCTES. It is also funded by national funds (OE), through FCT – Fundação para a Ciência e a Tecnologia, I.P., in the scope of the framework contract foreseen in the numbers 4, 5 and 6 of the article 23, of the Decree-Law 57/2016, of August 29, changed by Law 57/2017, of July 19.The calculations were carried out at the OBLIVION Supercomputer (based at the High Performance Computing Center - University of Évora) funded by the ENGAGE SKA Research Infrastructure (reference POCI-01-0145-FEDER-022217 - COMPETE 2020 and the Foundation for Science and Technology, Portugal) and by the BigData@UE project (reference ALT20-03-0246-FEDER-000033 - FEDER and the Alentejo 2020 Regional Operational Program). Oblivion resources were accessed through the advanced computing projects CPCA/A2/5649/2020 and CPCA/A2/4628/2020, funded by FCT I.P. The authors gratefully acknowledge the HPC RIVR consortium (www.hpc-rivr.si) and EuroHPC JU (eurohpc-ju.europa.eu) for funding this research by providing computing resources of the HPC system Vega at the Institute of Information Science (www.izum.si)The calculations were carried out at the OBLIVION Supercomputer (based at the High Performance Computing Center - University of Évora) funded by the ENGAGE SKA Research Infrastructure (reference POCI-01-0145-FEDER-022217 - COMPETE 2020 and the Foundation for Science and Technology, Portugal) and by the BigData@UE project (reference ALT20-03-0246-FEDER-000033 - FEDER and the Alentejo 2020 Regional Operational Program). Oblivion resources were accessed through the advanced computing projects CPCA/A2/5649/2020 and CPCA/A2/4628/2020, funded by FCT I.P. The authors gratefully acknowledge the HPC RIVR consortium (www.hpc-rivr.si) and EuroHPC JU (eurohpc-ju.europa.eu) for funding this research by providing computing resources of the HPC system Vega at the Institute of Information Science (www.izum.si

A Study of Extended Defects in Surface Damaged Crystals

We have analyzed by transmission electron microscopy silicon and GaAs crystals polished with sandpapers of different grain size. The surface damage induced a crystal permanent convex curvature with a radius of the order of a few meters. The curvature is due to a compressive strain generated in the damaged zone of the sample. Contrary to what was reported in the literature, the only defects detected by transmission electron microscopy were dislocations penetrating a few microns from the surface. Assuming the surface damage as a kind of continuous indentation, a simple model able to explain the observed compressive strain is given

The Role of the Synthesis Routes on the CO-Sensing Mechanism of NiO-Based Gas Sensors

In this study, two alternative synthesis routes have been used in obtaining gas-sensitive NiO materials. The structural and morphological aspects were systematically investigated by X-ray diffraction (XRD) and transmission electron microscopy (TEM), revealing significant differences further mirrored in their sensing performances. Simultaneous electrical resistance and contact potential differences have been involved aiming to decouple the energetic contributions: work function (ΔΦ), surface band bending (qΔVs) and electron affinity (Δχ). Two sensing mechanism scenarios explained the enhancement and downgrading in the sensor response to carbon monoxide (CO) concerning the synthesis strategies. The role of relative humidity (RH) was considered throughout the electrical operando (in-field) investigations

Etude de couches minces déposées par ablation laser (Manganites à magnétorésistance colossale (La 0,6 Y 0,07 Ca 0,33 MnO 3))

STRASBOURG-Sc. et Techniques (674822102) / SudocSudocFranceF

Evaluation of the Segregation of Paramagnetic Impurities at Grain Boundaries in Nanostructured ZnO Films

Magnetic and electrical properties of the nanostructured ZnO films are affected by the nonrandom distribution of impurities in the film due to segregation at grain boundaries (GBs) or extended defects. However, mapping the nature and distribution of the impurities in the film is not trivial. Here we demonstrate a simple, statistically relevant, and nondestructive procedure of quantitative determination of the paramagnetic impurities segregated at the GBs in nanostructured semiconducting and insulating films. From correlated electron paramagnetic resonance and transmission electron microscopy investigations, we determined the localization of trace amounts of Mn²⁺ ions, present as native impurities in a ZnO film deposited by magnetron sputtering at room temperature. In the as-deposited ZnO film, the Mn²⁺ ions were all localized in nanosized pockets of highly disordered ZnO dispersed between nanocrystalline columns. After the samples had been annealed in air at >400 °C, the size of the intercrystalline region decreased and the diffusion in GBs was activated, resulting in the localization of a portion of the Mn²⁺ ions in the peripheral atomic layers of the ZnO columns neighboring the GBs. The proportion of Mn²⁺ ions still localized at the GBs after annealing at 600 °C was 37%. The proposed method for the assessment of the presence and nature of impurities and the quantitative evaluation of their distribution in semiconducting and insulating nanostructures is expected to find direct applications in nanotechnology, in the synthesis and quality assurance of thin films for spintronics and opto- and nanoelectronics