InP/Ga0.47In0.53As monolithic, two-junction, three-terminal tandem solar cells

The work presented has focussed on increasing the efficiency of InP-based solar cells through the development of a high-performance InP/Ga(0.47)In(0.53)As two-junction, three-terminal monolithic tandem cell. Such a tandem is particularly suited to space applications where a radiation-hard top cell (i.e., InP) is required. Furthermore, the InP/Ga(0.47)In(0.53)As materials system is lattice matched and offers a top cell/bottom cell bandgap differential (0.60 eV at 300 K) suitable for high tandem cell efficiencies under AMO illumination. A three-terminal configuration was chosen since it allows for independent power collection from each subcell in the monolithic stack, thus minimizing the adverse impact of radiation damage on the overall tandem efficiency. Realistic computer modeling calculations predict an efficiency boost of 7 to 11 percent from the Ga(0.47)In(0.53)As bottom cell under AMO illumination (25 C) for concentration ratios in the 1 to 1000 range. Thus, practical AMO efficiencies of 25 to 32 percent appear possible with the InP/Ga(0.47)In(0.53)As tandem cell. Prototype n/p/n InP/Ga(0.47)In(0.53)As monolithic tandem cells were fabricated and tested successfully. Using an aperture to define the illuminated areas, efficiency measurements performed on a non-optimized device under standard global illumination conditions (25 C) with no antireflection coating (ARC) give 12.2 percent for the InP top cell and 3.2 percent for the Ga(0.47)In(0.53)As bottom cell, yielding an overall tandem efficiency of 15.4 percent. With an ARC, the tandem efficiency could reach approximately 22 percent global and approximately 20 percent AMO. Additional details regarding the performance of individual InP and Ga(0.47)In(0.53)As component cells, fabrication and operation of complete tandem cells and methods for improving the tandem cell performance, are also discussed

Analysis of Moisture and CO(2) Uptake in Anhydrous CdCl(2) Powders Used for Vapor CdCl(2) Treatment of CdS/CdTe PV Devices

Water and CO(2) uptake in CdCl(2) powder precursors was investigated using thermogravimetric analysis/Fourier transform infrared spectroscopy (TGA/FTIR). Exposure of powders under ambient conditions shows that a steady-state hydration level near 9% (by weight) is achieved after brief exposure to room air

Comparison of Minority Carrier Lifetime Measurements in Superstrate and Substrate CdTe PV Devices: Preprint

We discuss typical and alternative procedures to analyze time-resolved photoluminescence (TRPL) measurements of minority carrier lifetime (MCL) with the hope of enhancing our understanding of how this technique may be used to better analyze CdTe photovoltaic (PV) device functionality. Historically, TRPL measurements of the fast recombination rate (t1) have provided insightful correlation with broad device functionality. However, we have more recently found that t1 does not correlate as well with smaller changes in device performance, nor does it correlate well with performance differences observed between superstrate and substrate CdTe PV devices. This study presents TRPL data for both superstrate and substrate CdTe devices where both t1 and the slower TRPL decay (t2) are analyzed. The study shows that changes in performance expected from small changes in device processing may correlate better with t2. Numerical modeling further suggests that, for devices that are expected to have similar drift field in the depletion region, effects of changes in bulk MCL and interface recombination should be more pronounced in t2. Although this technique may provide future guidance to improving CdS/CdTe device performance, it is often difficult to extract statistically precise values for t2, and therefore t2 data may demonstrate significant scatter when correlated with performance parameters

Effects of Cu Diffusion from ZnTe:Cu/Ti Contacts on Carrier Lifetime of CdS/CdTe Thin Film Solar Cells: Preprint

We study the performance of CdS/CdTe thin film PV devices processed with a ZnTe:Cu/Ti contact to investigate how carrier lifetime in the CdTe layer is affected by Cu diffusion from the contact

Investigation of Junction Properties in CdS/CdTe Solar Cells and Their Correlation to Device Properties: Preprint

Secondary-ion mass spectrometry analysis of the CdS/CdTe interface shows that S diffusion in CdTe increases with substrate temperature and CdCl2 heat treatment. There is also an accumulation of Cl at the interface for CdCl2-treated samples. Modulated photo-reflectance studies shows that devices with CdCl2 heat treatment and open-circuit voltage (Voc) of 835 mV have a distinct high electric-field region in the layer with bandgap of 1.45 eV. Electron-beam induced current measurements reveal a one-sided junction for high Voc devices. The nature of the junction changes with processing. For heterojunction devices, the depletion region includes the highly defective CdS/CdTe interface, which would increase the recombination current and consequently the dark current, leading to lower Voc. In the case of CdCl2-treated cells, the n+-p junction and its high electric-field results in the junction between structurally compatible CdTe and the Te-rich CdSTe alloy, and thus, in higher Voc

Investigation of Junction Properties of CdS/CdTe Solar Cells and their Correlation to Device Properties

The objective of the Junction Studies are: (1) understand the nature of the junction in the CdTe/CdS device; (2) correlate the device fabrication parameters to the junction formation; and (3) develop a self consistent device model to explain the device properties. Detailed analysis of CdS/CdTe and SnO{sub 2}/CdTe devices prepared using CSS CdTe is discussed

Cross-Sectional Conductive Atomic Force Microscopy of CdTe/CdS Solar Cells: Effects of Etching and Back-Contact Processes; Preprint

We investigated the effects of the etching processes using bromine and nitric-phosphoric acid solutions, as well as of Cu, in the bulk electrical conductivity of CdTe/CdS solar cells using conductive atomic force microscopy (C-AFM). Although the etching process can create a conductive layer on the surface of the CdTe, the layer is very shallow. In contrast, the addition of a thin layer of Cu to the surface creates a conductive layer inside the CdTe that is not uniform in depth, is concentrated at grains boundaries, and may short circuit the device if the CdTe is too thin. The etching process facilitates the Cu diffusion and results in thicker conductive layers. The existence of this inhomogeneous conductive layer directly affects the current transport and is probably the reason for needing thick CdTe in these devices

Mutation of pescadillo Disrupts Oligodendrocyte Formation in Zebrafish

Background: In vertebrates, the myelin sheath is essential for efficient propagation of action potentials along the axon shaft. Oligodendrocytes are the cells of the central nervous system that create myelin sheaths. During embryogenesis, ventral neural tube precursors give rise to oligodendrocyte progenitor cells, which divide and migrate throughout the central nervous system. This study aimed to investigate mechanisms that regulate oligodendrocyte progenitor cell formation. Methodology/Principal Findings: By conducting a mutagenesis screen in transgenic zebrafish, we identified a mutation, designated vu166, by an apparent reduction in the number of oligodendrocyte progenitor cells in the dorsal spinal cord. We subsequently determined that vu166 is an allele of pescadillo, a gene known to play a role in ribosome biogenesis and cell proliferation. We found that pescadillo function is required for both the proper number of oligodendrocyte progenitors to form, by regulating cell cycle progression, and for normal levels of myelin gene expression. Conclusions/Significance: Our data provide evidence that neural precursors require pes function to progress through th

The trend of disruption in the functional brain network topology of Alzheimer’s disease

Alzheimer’s disease (AD) is a progressive disorder associated with cognitive dysfunction that alters the brain’s functional connectivity. Assessing these alterations has become a topic of increasing interest. However, a few studies have examined different stages of AD from a complex network perspective that cover different topological scales. This study used resting state fMRI data to analyze the trend of functional connectivity alterations from a cognitively normal (CN) state through early and late mild cognitive impairment (EMCI and LMCI) and to Alzheimer’s disease. The analyses had been done at the local (hubs and activated links and areas), meso (clustering, assortativity, and rich-club), and global (small-world, small-worldness, and efficiency) topological scales. The results showed that the trends of changes in the topological architecture of the functional brain network were not entirely proportional to the AD progression. There were network characteristics that have changed non-linearly regarding the disease progression, especially at the earliest stage of the disease, i.e., EMCI. Further, it has been indicated that the diseased groups engaged somatomotor, frontoparietal, and default mode modules compared to the CN group. The diseased groups also shifted the functional network towards more random architecture. In the end, the methods introduced in this paper enable us to gain an extensive understanding of the pathological changes of the AD process