Carbon-doped high mobility two-dimensional hole gases on (110) faced GaAs

Carbon-doped high mobility two-dimensional hole gases grown on (110) oriented GaAs substrates have been grown with hole mobilities exceeding 10^6 cm^2/Vs in single heterojunction GaAs/AlGaAs structures. At these high mobilities, a pronounced mobility anisotropy has been observed. Rashba induced spin-splitting in these asymmetric structures has been found to be independent on the transport direction

Carbon doped symmetric GaAs/AlGaAs quantum wells with hole mobilities beyond 10^6 cm^2/Vs

Utilizing a novel carbon doping source, we prepared two-dimensional hole gases in a symmetric quantum well structure in the GaAs/AlGaAs heterosystem. Low temperature hole mobilities up to 1.2 x 10^6 cm^2/Vs at a density of 2.3 x 10^11 cm^-2 were achieved on GaAs (001) substrates. In contrast to electron systems, the hole mobility sensitively depends on variations of the quantum well width and the spacer thickness. In particular an increase of the quantum well width from an optimal value of 15 nm to 18 nm is accompanied by a 35 % reduction of the hole mobility. The quality of ultrahigh-mobility electron systems is not affected by the employed carbon doping source

Gate control of low-temperature spin dynamics in two-dimensional hole systems

We have investigated spin and carrier dynamics of resident holes in high-mobility two-dimensional hole systems in GaAs/Al$_{0.3}$Ga$_{0.7}$As single quantum wells at temperatures down to 400 mK. Time-resolved Faraday and Kerr rotation, as well as time-resolved photoluminescence spectroscopy are utilized in our study. We observe long-lived hole spin dynamics that are strongly temperature dependent, indicating that in-plane localization is crucial for hole spin coherence. By applying a gate voltage, we are able to tune the observed hole g factor by more than 50 percent. Calculations of the hole g tensor as a function of the applied bias show excellent agreement with our experimental findings.Comment: 8 pages, 7 figure

Propagating front in an excited granular layer

A partial monolayer of ~ 20000 uniform spherical steel beads, vibrated vertically on a flat plate, shows remarkable ordering transitions and cooperative behavior just below 1g maximum acceleration. We study the stability of a quiescent disordered or ``amorphous'' state formed when the acceleration is switched off in the excited ``gaseous'' state. The transition from the amorphous state back to the gaseous state upon increasing the plate's acceleration is generally subcritical: An external perturbation applied to one bead initiates a propagating front that produces a rapid transition. We measure the front velocity as a function of the applied acceleration. This phenomenon is explained by a model based on a single vibrated particle with multiple attractors that is perturbed by collisions. A simulation shows that a sufficiently high rate of interparticle collisions can prevent trapping in the attractor corresponding to the nonmoving ground state.Comment: 16 pages, 9 figures, revised version, to appear in Phys. Rev. E, May 199

Performance of HPGe Detectors in High Magnetic Fields

A new generation of high-resolution hypernuclear gamma$-spectroscopy experiments with high-purity germanium detectors (HPGe) are presently designed at the FINUDA spectrometer at DAPhiNE, the Frascati phi-factory, and at PANDA, the antiproton proton hadron spectrometer at the future FAIR facility. Both, the FINUDA and PANDA spectrometers are built around the target region covering a large solid angle. To maximise the detection efficiency the HPGe detectors have to be located near the target, and therefore they have to be operated in strong magnetic fields B ~ 1 T. The performance of HPGe detectors in such an environment has not been well investigated so far. In the present work VEGA and EUROBALL Cluster HPGe detectors were tested in the field provided by the ALADiN magnet at GSI. No significant degradation of the energy resolution was found, and a change in the rise time distribution of the pulses from preamplifiers was observed. A correlation between rise time and pulse height was observed and is used to correct the measured energy, recovering the energy resolution almost completely. Moreover, no problems in the electronics due to the magnetic field were observed.Comment: submitted to Nucl. Instrum. Meth. Phys. Res. A, LaTeX, 19 pages, 9 figure

Spin photocurrents and circular photon drag effect in (110)-grown quantum well structures

We report on the study of spin photocurrents in (110)-grown quantum well structures. Investigated effects comprise the circular photogalvanic effect and so far not observed circular photon drag effect. The experimental data can be described by an analytical expression derived from a phenomenological theory. A microscopic model of the circular photon drag effect is developed demonstrating that the generated current has spin dependent origin.Comment: 6 pages, 3 figure

On the β-detection efficiency of a combined Si and plastic stack detector for DESPEC

A Geant4 simulation has been carried out in order to determine the B-detection efficiency of a rare isotope beam implantation setup, for decay spectroscopy experiments, comprising a number of Double Sided Silicon Strip Detectors (DSSSDs) and two plastic scintillation detectors placed upstream and downstream. The absolute efficiency for the emitted B-particle detection from radioactive fragments implanted in the DSSSDs using fast-timing plastic-scintillator detector, is calculated. The detection efficiency of the setup has been studied with two different distances between the Si layers and plastics. The requirement for the thickness of the Si detector layers and its implication on the B-detection effciency has been investigated for 1 mm and 300 um thickness of Si layers. The combined efficiency of DSSSD and plastic detectors were also simulated for two different thicknesses of the DSSSD