PCA9518A Expandable 5-channel I2C-bus hub

The PCA9518A is a CMOS integrated circuit intended for application in I 2 C-bus an

Table 2. Pinning Pin Description Simplified outline Graphic symbol

A 20 W LDMOS RF transistor for broadcast applications and industrial applications in the HF and VHF band

Symbol Parameter Conditions Min Typ Max Unit

The BGA3018 MMIC is a wideband amplifier with internal biasing. It is designed specifically for high linearity CATV line extenders and drop amplifiers over a frequency range of 5 MHz to 1006 MHz. The LNA is housed in a lead free 3-pin SOT89 package. 1.2 Features and benefits � Internally biased � Noise figure of 2.1 dB � Flat gain � 75 � input and output impedance � High linearity with an IP3O of 40 dBm and an IP2O of 60 dBm � Operating from 5 V to 8 V suppl

Objective data sheet

The NXQ1TXA1 is a state of the art digital control controller for Qi-standard conforming wireless charger base stations. The controller supports type A1 or A10 single coil base stations. The NXQ1TXA1 offers wireless power transfer, WPC 1.1- Qi low power standard-compliant communication and safety functions including Foreign Object Detection (FOD), temperature monitoring and more. The controller supports the conventional WPC pinging mode during standby to identify potential receivers and also works with the NXP NFC TAGs to enabled by e.g. a NFC enabled phone so that the charger supports a zero power standby mode. The controller also offers a flexible User Interface (UI) with up to two LEDs and one buzzer for feedback and control. Depending on the required charging pad area, coil configurations such as A1 (single coil with magnet) and A10 (single coil without magnet) are supported. 2. Features and benefits Qi conforming wireless charger controller and communication

Table 2. Pinning

N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology

Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit

Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high performance automotive applications. 1.2 Features and benefits � AEC Q101 compliant � Suitable for standard and logic level gate drive sources � Suitable for thermally demanding environments due to 175 °C rating 1.3 Applications � 12 V Automotive systems � Electric and electro-hydraulic power steering � Motors, lamps and solenoid control � Start-Stop micro-hybrid applications � Transmission control � Ultra high performance power switching 1.4 Quick reference dat

Symbol Parameter Conditions Min Max Unit

Ultrafast, dual common cathode, epitaxial rectifier diode in a SOT186A (TO-220F)) plastic package

Symbol Parameter Conditions Min Typ Max Unit

Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefits � Q101 compliant � Suitable for standard level gate drive sources � Suitable for thermally demanding environments due to 175 °C ratin

Dynamic characteristics

Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Features and benefits � Higher operating power due to low thermal resistance � Suitable for high frequency applications due to fast switching characteristics 1.3 Application

Dynamic characteristics

Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Features and benefits � Low conduction losses due to low on-state resistance � Suitable for high frequency applications due to fast switching characteristics 1.3 Application