A 20 W LDMOS RF transistor for broadcast applications and industrial applications in the HF and VHF band

General Description

CiteSeerX

1. Product proﬁle
1.1 General description
A 20 W LDMOS RF transistor for broadcast applications and industrial applications in the
HF and VHF band.
1.2 Features
n Typical CW performance at frequency of 225 MHz, a supply voltage of 50 V and an IDq
of 50 mA:
u Average output power = 20 W
u Power gain = 27.5 dB
u Efﬁciency = 70 %
n Easy power control
n Integrated ESD protection
n Excellent ruggedness
n High efﬁciency
n Excellent thermal stability
n Designed for broadband operation (10 MHz to 500 MHz)
n Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
n Industrial, scientiﬁc and medical applications
n Broadcast transmitter applications
BLF571
HF / VHF power LDMOS transistor
Rev. 02 — 24 February 2009 Product data sheet
Table 1. Production test performance
Mode of operation f VDS PL Gp hD
(MHz) (V) (W) (dB) (%)
CW 225 50 20 27.5 70
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.BLF571_2 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 02 — 24 February 2009 2 of 13
NXP Semiconductors BLF571
HF / VHF power LDMOS transistor
2. Pinning information
[1] Connected to ﬂange.
3. Ordering information
4. Limiting values
5. Thermal characteristics
Table 2. Pinning
Pin Description Simpliﬁed outline Graphic symbol
1 drain
2 gate
3 source [1]
1
2
3
sym112
1
3
2
Table 3. Ordering information
Type number Package
Name Description Version
BLF571 - ﬂanged LDMOST ceramic package; 2 mounting holes;
2 leads
SOT467C
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
VDS drain-source voltage - 110 V
VGS gate-source voltage -0.5 +11 V
ID drain current - 3.6 A
Tstg storage temperature -65 +150 °C
Tj junction temperature - 225 °C
Table 5. Thermal characteristics
Symbol Parameter Conditions Typ Unit
Rth(j-c) thermal resistance from junction to case Tcase =8 0°C; PL = 20 W 2.9 K/WBLF571_2 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 02 — 24 February 2009 3 of 13
NXP Semiconductors BLF571
HF / VHF power LDMOS transistor
6. Characteristics
Table 6. DC characteristics
Tj = 25 °C unless otherwise speciﬁed.
Symbol Parameter Conditions Min Typ Max Unit
V(BR)DSS drain-source breakdown
voltage
VGS =0V ;  I D = 0.25 mA 110 - - V
VGS(th) gate-source threshold voltage VDS = 10 V; ID = 25 mA 1.25 1.7 2.25 V
VGSq gate-source quiescent voltage VDS = 50 V; ID = 50 mA 1.25 1.75 2.25 V
IDSS drain leakage current VGS =0V ;  V DS =5 0V - - 1 . 4 mA
IDSX drain cut-off current VGS =V GS(th) + 3.75 V;
VDS =1 0V
3.0 3.6 - A
IGSS gate leakage current VGS = 11 V; VDS = 0 V - - 140 nA
gfs forward transconductance VDS =1 0V ;  I D = 1.25 A - 1.8 - S
RDS(on) drain-source on-state
resistance
VGS =V GS(th) + 3.75 V;
ID = 833 mA
- 1.34 - W
Crs feedback capacitance VGS =0V ;  V DS =5 0V ;
f=1M H z
- 0.18 - pF
Ciss input capacitance VGS =0V ;  V DS =5 0V ;
f=1M H z
- 22.9 - pF
Coss output capacitance VGS =0V ;  V DS =5 0V ;
f=1M H z
- 9.64 - pF
Table 7. RF characteristics
Mode of operation: CW; f = 225 MHz; RF performance at VDS = 50 V; IDq = 50 mA; Tcase =2 5°C;
unless otherwise speciﬁed; in a class-AB production test circuit.
Symbol Parameter Conditions Min Typ Max Unit
Gp power gain PL = 20 W 25.5 27.5 29.5 dB
RLin input return loss PL = 20 W 10 13 - dB
hD drain efﬁciency PL = 20 W 67 70 - %BLF571_2 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 02 — 24 February 2009 4 of 13
NXP Semiconductors BLF571
HF / VHF power LDMOS transistor
6.1 Ruggedness in class-AB operation
The BLF571 is capable of withstanding a load mismatch corresponding to VSWR = 13 : 1
through all phases under the following conditions: VDS = 50 V; IDq = 50 mA; PL = 20 W;
f = 225 MHz.
7. Application information
7.1 Impedance information
VGS = 0 V; f = 1 MHz.
Fig 1. Output capacitance as a function of drain-source voltage; capacitance value
without internal matching
VDS (V)
05 0 40 20 30 10
001aaj172
20
30
10
40
50
Coss
(pF)
0
Table 8. Typical impedance
Simulated ZS and ZL test circuit impedances.
f ZS ZL
MHz W W
225 9.7 + j31.5 31.7 + j29.3
Fig 2. Deﬁnition of transistor impedance
001aaf059
drain
ZL
ZS
gateBLF571_2 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 02 — 24 February 2009 5 of 13
NXP Semiconductors BLF571
HF / VHF power LDMOS transistor
7.2 Reliability
TTF (0.1 % failure fraction).
(1) Tj = 100 °C
(2) Tj = 110 °C
(3) Tj = 120 °C
(4) Tj = 130 °C
(5) Tj = 140 °C
(6) Tj = 150 °C
(7) Tj = 160 °C
(8) Tj = 170 °C
(9) Tj = 180 °C
(10) Tj = 190 °C
(11) Tj = 200 °C
Fig 3. BLF571 electromigration
001aaj173
102
10
104
103
105
Years
1
IDS(DC) (A)
0 1.6 1.2 0.8 0.4
(1) (2) (3) (4) (5) (6)
(7) (8) (9) (10) (11)BLF571_2 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 02 — 24 February 2009 6 of 13
NXP Semiconductors BLF571
HF / VHF power LDMOS transistor
8. Test information
8.1 RF performance
The following ﬁgures are measured in a class-AB production test circuit.
8.1.1 1-Tone CW
VDS = 50 V; IDq = 50 mA; f = 225 MHz. VDS = 50 V; f = 225 MHz.
(1) IDq = 20 mA
(2) IDq = 40 mA
(3) IDq = 50 mA
(4) IDq = 60 mA
(5) IDq = 80 mA
Fig 4. Power gain and drain efﬁciency as function of
load power; typical values
Fig 5. Power gain as a function of load power; typical
values
001aaj174
PL (W)
03 0 20 10 25 15 5
26
24
28
30
Gp
(dB)
22
40
20
60
80
0
hD
(%)
Gp
hD
001aaj175
PL (W)
03 0 20 10 25 15 5
26
24
28
30
Gp
(dB)
22
(4)
(3)
(2)
(1)
(5)BLF571_2 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 02 — 24 February 2009 7 of 13
NXP Semiconductors BLF571
HF / VHF power LDMOS transistor
8.1.2 2-Tone CW
VDS = 50 V; IDq = 50 mA; f = 225 MHz.
(1) PL(1dB) = 43.3 dBm (21.4 W)
(2) PL(3dB) = 44 dBm (25.1 W)
Fig 6. Load power as function of input power; typical values
Pi (dBm)
13 21 19 15 17
001aaj176
44
46
42
48
50
PL
(dBm)
40
(1)
(2)
ideal PL
PL
VDS = 50 V; IDq = 50 mA; f1 = 224.95 MHz;
f2 = 225.05 MHz.
VDS = 50 V; f1 = 224.95 MHz; f2 = 225.05 MHz.
(1) IDq = 20 mA
(2) IDq = 40 mA
(3) IDq = 50 mA
(4) IDq = 60 mA
(5) IDq = 80 mA
Fig 7. Power gain and drain efﬁciency as function of
peak envelope load power; typical values
Fig 8. Third order intermodulation distortion as a
function of peak envelope load power; typical
values
001aaj177
PL(PEP) (W)
03 0 20 10
26
24
28
30
Gp
(dB)
hD
(%)
22
40
20
60
80
0
Gp
hD
PL(PEP) (W)
03 0 20 10
001aaj178
-40
-20
0
IMD3
(dBc)
-60
(2)
(3)
(4)
(5)
(1)BLF571_2 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 02 — 24 February 2009 8 of 13
NXP Semiconductors BLF571
HF / VHF power LDMOS transistor
8.2 Test circuit
[1] American Technical Ceramics type 100B or capacitor of same quality.
[2] Printed-Circuit Board (PCB): Rogers 5880; er = 2.2 F/m; height = 0.79 mm; Cu (top/bottom metallization);
thickness copper plating = 35 mm.
Table 9. List of components
All capacitors should be soldered vertically. For test circuit, see Figure 9 and Figure 10.
Component Description Value Remarks
C1, C3, C4,
C5, C14
multilayer ceramic chip capacitor 100 pF [1]
C2 multilayer ceramic chip capacitor 39 pF [1]
C6 multilayer ceramic chip capacitor 68 pF [1]
C7, C9 multilayer ceramic chip capacitor 1 nF [1]
C8 multilayer ceramic chip capacitor 4.7 mF TDK C4532X7R1E475MT020U or equivalent
C10 multilayer ceramic chip capacitor 8.2 pF [1]
C11 electrolytic capacitor 220 mF
C12 multilayer ceramic chip capacitor 33 pF [1]
C13 multilayer ceramic chip capacitor 15 pF [1]
L1 1 turn enamelled copper wire D = 5.5 mm;
d=1m m ;
length=1m m
L2 2 turns enamelled copper wire D = 3.5 mm;
d=1m m ;
length=3m m
L3 5 turns enamelled copper wire D=6m m ;
d=1m m ;
length=5m m
L4 3.3 turns enamelled copper wire D=3m m ;
d=1m m ;
length=4m m
L5 3 turns enamelled copper wire D=3m m ;
d=1m m ;
length=3m m
L6 stripline - [2] (L ´ W) 16.5 mm ´ 2.4 mm
L7, L8, L10,
L11, L17, L19,
L20
stripline - [2] (L ´ W) 3.0 mm ´ 5.0 mm
L9 stripline - [2] (L ´ W) 43.0 mm ´ 2.4 mm
L12, L15 stripline - [2] (L ´ W) 3.5 mm ´ 2.4 mm
L13, L14 stripline - [2] (L ´ W) 8.0 mm ´ 8.0 mm
L16 stripline - [2] (L ´ W) 3.0 mm ´ 5.9 mm
L18 stripline - [2] (L ´ W) 27.0 mm ´ 2.4 mm
L21 stripline - [2] (L ´ W) 28.5 mm ´ 2.4 mm
R1 metal ﬁlm resistor 1000 W; 0.6 WBLF571_2 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 02 — 24 February 2009 9 of 13
NXP Semiconductors BLF571
HF / VHF power LDMOS transistor
Fig 9. Class-AB common-source production test circuit
C1
input
50 W C14
output
50 W
C8
C7
VGG
R1
L13
L11
L12
C6 C5
L10 L2 L17 L16 L4 L20 L19 L5 L8 L7 L1 L9 L18 L21 L6
L14
L3
C11
C9
VDD
001aaj179
L15
C4 C3 C2 C12 C13 C10
Fig 10. Component layout for class-AB production test circuit
001aaj180
C11
C9 C7
C8
C10 C12 C6 C5 C4 C2 C3
C1
C13
C14
L3 R1
L4 L2 L1 L5
9 mm
NXP BLF571 225 MHz INPUT PCB REV1 NXP BLF571 225 MHz OUTPUT PCB REV2
5.5 mm 6.5 mm 5 mm 3 mmBLF571_2 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 02 — 24 February 2009 10 of 13
NXP Semiconductors BLF571
HF / VHF power LDMOS transistor
9. Package outline
Fig 11. Package outline SOT467C
 REFERENCES OUTLINE
VERSION
EUROPEAN
PROJECTION ISSUE DATE
 IEC  JEDEC  EIAJ
 SOT467C 99-12-06
99-12-28
0 5 10 mm
scale
Flanged LDMOST ceramic package; 2 mounting holes; 2 leads
0.15
0.10
5.59
5.33
9.25
9.04
1.65
1.40
18.54
17.02
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
3.43
3.18
4.67
3.94
2.21
1.96
D
D1
U1
1
3
2
A
U2 E
E1
p
b
H
Q
F
c
UNIT Q cD
9.27
9.02
D1
5.92
5.77
E
5.97
5.72
E1 FH p q
mm
0.184
0.155
inch
b
14.27 20.45
20.19
U2 U1
5.97
5.72
0.25
w1
0.51
0.006
0.004
0.220
0.210
0.364
0.356
0.065
0.055
0.73
0.67
0.135
0.125
0.087
0.077
0.365
0.355
0.233
0.227
0.235
0.225
0.562 0.805
0.795
0.235
0.225
0.010 0.020
w2 A
M M C
C
A w1
w2
AB M M M
q
B
SOT467CBLF571_2 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 02 — 24 February 2009 11 of 13
NXP Semiconductors BLF571
HF / VHF power LDMOS transistor
10. Abbreviations
11. Revision history
Table 10. Abbreviations
Acronym Description
CW Continuous Wave
EDGE Enhanced Data rates for GSM Evolution
GSM Global System for Mobile communications
HF High Frequency
LDMOS Laterally Diffused Metal-Oxide Semiconductor
LDMOST Laterally Diffused Metal-Oxide Semiconductor Transistor
RF Radio Frequency
TTF Time To Failure
VHF Very High Frequency
VSWR Voltage Standing-Wave Ratio
Table 11. Revision history
Document ID Release date Data sheet status Change notice Supersedes
BLF571_2 20090224 Product data sheet - BLF571_1
Modiﬁcations: • Data sheet status updated from Preliminary to Product
BLF571_1 20081211 Preliminary data sheet - -BLF571_2 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 02 — 24 February 2009 12 of 13
NXP Semiconductors BLF571
HF / VHF power LDMOS transistor
12. Legal information
12.1 Data sheet status
[1] Please consult the most recently issued document before initiating or completing a design.
[2] The term ‘short data sheet’ is explained in section “Deﬁnitions”.
[3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
12.2 Deﬁnitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modiﬁcations or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
ofﬁce. In case of any inconsistency or conﬂict with the short data sheet, the
full data sheet shall prevail.
12.3 Disclaimers
General — Information in this document is believed to be accurate and
reliable. However, NXP Semiconductors does not give any representations or
warranties, expressed or implied, as to the accuracy or completeness of such
information and shall have no liability for the consequences of use of such
information.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation speciﬁcations and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
speciﬁed use without further testing or modiﬁcation.
Limiting values — Stress above one or more limiting values (as deﬁned in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.
Terms and conditions of sale — NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.nxp.com/proﬁle/terms, including those pertaining to warranty,
intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conﬂict between information in this document and such
terms and conditions, the latter will prevail.
No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
12.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
13. Contact information
For more information, please visit: http://www.nxp.com
For sales ofﬁce addresses, please send an email to: salesaddresses@nxp.com
Document status[1][2] Product status[3] Deﬁnition
Objective [short] data sheet Development This document contains data from the objective speciﬁcation for product development.
Preliminary [short] data sheet Qualiﬁcation This document contains data from the preliminary speciﬁcation.
Product [short] data sheet Production This document contains the product speciﬁcation.NXP Semiconductors BLF571
HF / VHF power LDMOS transistor
© NXP B.V. 2009. All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 24 February 2009
Document identifier: BLF571_2
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
14. Contents
1 Product proﬁle . . . . . . . . . . . . . . . . . . . . . . . . . .  1
1.1 General description. . . . . . . . . . . . . . . . . . . . . .  1
1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  1
1.3 Applications  . . . . . . . . . . . . . . . . . . . . . . . . . . .  1
2 Pinning information. . . . . . . . . . . . . . . . . . . . . .  2
3 Ordering information. . . . . . . . . . . . . . . . . . . . .  2
4 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . .  2
5 Thermal characteristics. . . . . . . . . . . . . . . . . . .  2
6 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . .  3
6.1 Ruggedness in class-AB operation. . . . . . . . . .  4
7 Application information. . . . . . . . . . . . . . . . . . .  4
7.1 Impedance information. . . . . . . . . . . . . . . . . . .  4
7.2 Reliability  . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  5
8 Test information. . . . . . . . . . . . . . . . . . . . . . . . .  6
8.1 RF performance . . . . . . . . . . . . . . . . . . . . . . . .  6
8.1.1 1-Tone CW . . . . . . . . . . . . . . . . . . . . . . . . . . . .  6
8.1.2 2-Tone CW . . . . . . . . . . . . . . . . . . . . . . . . . . . .  7
8.2 Test circuit. . . . . . . . . . . . . . . . . . . . . . . . . . . . .  8
9 Package outline . . . . . . . . . . . . . . . . . . . . . . . .  10
10 Abbreviations. . . . . . . . . . . . . . . . . . . . . . . . . .  11
11 Revision history. . . . . . . . . . . . . . . . . . . . . . . .  11
12 Legal information. . . . . . . . . . . . . . . . . . . . . . .  12
12.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . .  12
12.2 Deﬁnitions. . . . . . . . . . . . . . . . . . . . . . . . . . . .  12
12.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . .  12
12.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . .  12
13 Contact information. . . . . . . . . . . . . . . . . . . . .  12
14 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  13

Table 2. Pinning Pin Description Simplified outline Graphic symbol

http://www.nxp.com/documents/data_sheet/BLF571.pdf

Table 2. Pinning Pin Description Simplified outline Graphic symbol

Abstract

Similar works

Full text

Available Versions

CiteSeerX