Classification of Lakebed Geologic Substrate in Autonomously Collected Benthic Imagery Using Machine Learning

Mapping benthic habitats with bathymetric, acoustic, and spectral data requires georeferenced ground-truth information about habitat types and characteristics. New technologies like autonomous underwater vehicles (AUVs) collect tens of thousands of images per mission making image-based ground truthing particularly attractive. Two types of machine learning (ML) models, random forest (RF) and deep neural network (DNN), were tested to determine whether ML models could serve as an accurate substitute for manual classification of AUV images for substrate type interpretation. RF models were trained to predict substrate class as a function of texture, edge, and intensity metrics (i.e., features) calculated for each image. Models were tested using a manually classified image dataset with 9-, 6-, and 2-class schemes based on the Coastal and Marine Ecological Classification Standard (CMECS). Results suggest that both RF and DNN models achieve comparable accuracies, with the 9-class models being least accurate (~73–78%) and the 2-class models being the most accurate (~95–96%). However, the DNN models were more efficient to train and apply because they did not require feature estimation before training or classification. Integrating ML models into benthic habitat mapping process can improve our ability to efficiently and accurately ground-truth large areas of benthic habitat using AUV or similar images

Component integration strategies in metamorphic 4-junction III-V concentrator solar cells

Progressing beyond 3-junction inverted-metamorphic multijunction solar cells grown on GaAs substrates, to 4-junction devices, requires the development of high quality metamorphic 0.7 eV GaInAs solar cells. Once accomplished, the integration of this subcell into a full, Monolithic, series connected, 4J-IMM structure demands the development of a metamorphic tunnel junction lattice matched to the 1eV GaInAs subcell. Moreover, the 0.7 eV junction adds about 2 hours of growth time to the structure, implying a heavier annealing of the subcells and tunnel junctions grown first. The final 4J structure is above 20 Pm thick, with about half of this thickness used by the metamorphic buffers required to change the lattice constant throughout the structure. Thinning of these buffers would help reduce the total thickness of the 4J structure to decrease its growth cost and the annealing time. These three topics: development of a metamorphic tunnel junction for the 4th junction, analysis of the annealing, and thinning of the structure, are tackled in this work. The results presented show the successful implementation of an antimonide-based tunnel junction for the 4th junction and of pathways to mitigate the impact of annealing and reduce the thickness of the metamorphic buffers

Micro-optical Tandem Luminescent Solar Concentrators

Traditional concentrating photovoltaic (CPV) systems utilize multijunction cells to minimize thermalization losses, but cannot efficiently capture diffuse sunlight, which contributes to a high levelized cost of energy (LCOE) and limits their use to geographical regions with high direct sunlight insolation. Luminescent solar concentrators (LSCs) harness light generated by luminophores embedded in a light-trapping waveguide to concentrate light onto smaller cells. LSCs can absorb both direct and diffuse sunlight, and thus can operate as flat plate receivers at a fixed tilt and with a conventional module form factor. However, current LSCs experience significant power loss through parasitic luminophore absorption and incomplete light trapping by the optical waveguide. Here we introduce a tandem LSC device architecture that overcomes both of these limitations, consisting of a PLMA polymer layer with embedded CdSe/CdS quantum dot (QD) luminophores and InGaP micro-cells, which serve as a high bandgap absorber on top of a conventional Si photovoltaic. We experimentally synthesize CdSe/CdS QDs with exceptionally high quantum-yield (99%) and ultra-narrowband emission optimally matched to fabricated III-V InGaP micro-cells. Using a Monte Carlo ray-tracing model, we show the radiative limit power conversion efficiency for a module with these components to be 30.8% diffuse sunlight conditions. These results indicate that a tandem LSC-on-Si architecture could significantly improve upon the efficiency of a conventional Si photovoltaic module with simple and straightforward alterations of the module lamination steps of a Si photovoltaic manufacturing process, with promise for widespread module deployment across diverse geographical regions and energy markets

Experimental and modeling analysis of internal luminescence in III-V solar cells

In high quality solar cells, the internal luminescence can be harnessed to enhance the overall performance. Internal confinement of the photons can lead to an increased open-circuit voltage and short-circuit current. Alternatively, in multijunction solar cells the photons can be coupled from a higher bandgap junction to a lower bandgap junction for enhanced performance. We model the solar cell as an optical cavity and compare calculated performance characteristics with measurements. We also describe how very high luminescent coupling alleviates the need for top-cell thinning to achieve current-matching

Enhanced external radiative efficiency for 20.8 efficient single-junction GaInP solar cells

We demonstrate 1.81 eV GaInP solar cells approaching the Shockley-Queisser limit with 20.8% solar conversion efficiency, 8% external radiative efficiency, and 80–90% internal radiative efficiency at one-sun AM1.5 global conditions. Optically enhanced voltage through photon recycling that improves light extraction was achieved using a back metal reflector. This optical enhancement was realized at one-sun currents when the non-radiative Sah-Noyce-Shockley junction recombination current was reduced by placing the junction at the back of the cell in a higher band gap AlGaInP layer. Electroluminescence and dark current-voltage measurements show the separate effects of optical management and non-radiative dark current reduction

Metamorphic III-V solar cells: recent progress and potential

Metamorphic semiconductor devices are commonly considered to have inferior electronic quality. However, recent development of compositionally graded buffers and junction structures have led to the achievement of high quality metamorphic solar cells exhibiting internal luminescence efficiencies over 90%. Optimizing the optical design of the solar cell becomes important in order to enhance photon recycling and open circuit voltage in these cells. In this paper we first present recent performance results for 1eV and 0.7eV GaInAs solar cells grown on GaAs substrates. Then an electro-optical model is used to assess the potential performance improvements in current metamorphic solar cells under different realizable design scenarios. The results show that significant improvements can be achieved by improving both the electronic quality and optics of these cells

Impurity-Band Model for GaP1-xNx

Low-temperature absorption studies on free-standing GaP1-xNx films provide direct experimental evidence that the host conduction-band minimum (CBM) near X1C does not plunge downward with increased nitrogen doping, contrary to what has been suggested recently; rather, it remains stationary for x up to 0.1%. This fact, combined with the results of earlier studies of the CBM at ..GAMMA.. and conduction-band edge near L, confirms that the giant bandgap lowering observed in GaP1-xNx results from a CBM that evolves purely from nitrogen impurity bands

Generalized optoelectronic model of series-connected multijunction solar cells

The emission of light from each junction in a series-connected multijunction solar cell both complicates and elucidates the understanding of its performance under arbitrary conditions. Bringing together many recent advances in this understanding, we present a general 1-D model to describe luminescent coupling that arises from both voltage-driven electroluminescence and voltage-independent photoluminescence in nonideal junctions that include effects such as Sah-Noyce-Shockley (SNS) recombination with n ≠ 2, Auger recombination, shunt resistance, reverse-bias breakdown, series resistance, and significant dark area losses. The individual junction voltages and currents are experimentally determined from measured optical and electrical inputs and outputs of the device within the context of the model to fit parameters that describe the devices performance under arbitrary input conditions. Techniques to experimentally fit the model are demonstrated for a four-junction inverted metamorphic solar cell, and the predictions of the model are compared with concentrator flash measurements

Direct Comparison of Inverted and Non-inverted Growths of GaInP Solar Cells

The motivation for this presentation is that growing inverted cells may enable technological advances in solar cell fabrication, leading to higher efficiencies. Differences in dopant diffusion during inverted vs. upright growths may lead to differences in atomic depth profiles; changes in carrier concentrations; higher contact resistance and lower overall performance. This presentation summarizes that excellent performance is achievable in both upright and inverted configurations with proper consideration; subtle differences in depth profile QE and JV between upright and inverted growths due to dopant diffusion; and GaInAsN contact layer is resilient to length annealing and more work is necessary to determine why

Direct Comparison of Inverted and Non-Inverted Growths of GaInP Solar Cells: Preprint

The inverted growth of III-V solar cells presents some specific challenges that are not present in regular, non-inverted growths. Because the highly doped top contact layer is grown first, followed by the lengthy high-temperature growth of the remainder of the structure, there is ample time for the dopants in the contact layer to diffuse away. This leads to an increase in the contact resistance to the top layer, and a corresponding drop in voltage. The diffusion of dopants in other layers is similarly altered with respect to the non-inverted configuration because of the change in growth sequence. We compare the dopant profiles of inverted and non-inverted structures by using secondary ion mass spectroscopy and correlate the results with the observed performance of the devices. We also describe a technique for growing a GaInAsN contact layer in the inverted configuration and show that it achieves a specific contact resistance comparable to what is normally observed in non-inverted cells