Strong plasmonic enhancement of photovoltage in graphene.

From the wide spectrum of potential applications of graphene, ranging from transistors and chemical sensors to nanoelectromechanical devices and composites, the field of photonics and optoelectronics is believed to be one of the most promising. Indeed, graphene's suitability for high-speed photodetection was demonstrated in an optical communication link operating at 10 Gbit s(-1). However, the low responsivity of graphene-based photodetectors compared with traditional III-V-based ones is a potential drawback. Here we show that, by combining graphene with plasmonic nanostructures, the efficiency of graphene-based photodetectors can be increased by up to 20 times, because of efficient field concentration in the area of a p-n junction. Additionally, wavelength and polarization selectivity can be achieved by employing nanostructures of different geometries

Intrinsic ripples in graphene

The stability of two-dimensional (2D) layers and membranes is subject of a long standing theoretical debate. According to the so called Mermin-Wagner theorem, long wavelength fluctuations destroy the long-range order for 2D crystals. Similarly, 2D membranes embedded in a 3D space have a tendency to be crumpled. These dangerous fluctuations can, however, be suppressed by anharmonic coupling between bending and stretching modes making that a two-dimensional membrane can exist but should present strong height fluctuations. The discovery of graphene, the first truly 2D crystal and the recent experimental observation of ripples in freely hanging graphene makes these issues especially important. Beside the academic interest, understanding the mechanisms of stability of graphene is crucial for understanding electronic transport in this material that is attracting so much interest for its unusual Dirac spectrum and electronic properties. Here we address the nature of these height fluctuations by means of straightforward atomistic Monte Carlo simulations based on a very accurate many-body interatomic potential for carbon. We find that ripples spontaneously appear due to thermal fluctuations with a size distribution peaked around 70 \AA which is compatible with experimental findings (50-100 \AA) but not with the current understanding of stability of flexible membranes. This unexpected result seems to be due to the multiplicity of chemical bonding in carbon.Comment: 14 pages, 6 figure

Detecting topological currents in graphene superlattices

This is the author accepted manuscript. The final version is available from AAAS via the DOI in this record.Topological materials may exhibit Hall-like currents flowing transversely to the applied electric field even in the absence of a magnetic field. In graphene superlattices, which have broken inversion symmetry, topological currents originating from graphene's two valleys are predicted to flow in opposite directions and combine to produce long-range charge neutral flow. We observed this effect as a nonlocal voltage at zero magnetic field in a narrow energy range near Dirac points at distances as large as several micrometers away from the nominal current path. Locally, topological currents are comparable in strength with the applied current, indicating large valley-Hall angles. The long-range character of topological currents and their transistor-like control by means of gate voltage can be exploited for information processing based on valley degrees of freedom.This work was supported by the European Research Council, the Royal Society, the National Science Foundation (STC Center for Integrated Quantum Materials, grant DMR‐1231319), Engineering & Physical Research Council (UK), the Office of Naval Research and the Air Force Office of Scientific Research

Electronic Properties of Boron and Nitrogen doped graphene: A first principles study

Effect of doping of graphene either by Boron (B), Nitrogen (N) or co-doped by B and N is studied using density functional theory. Our extensive band structure and density of states calculations indicate that upon doping by N (electron doping), the Dirac point in the graphene band structure shifts below the Fermi level and an energy gap appears at the high symmetric K-point. On the other hand, by B (hole doping), the Dirac point shifts above the Fermi level and a gap appears. Upon co-doping of graphene by B and N, the energy gap between valence and conduction bands appears at Fermi level and the system behaves as narrow gap semiconductor. Obtained results are found to be in well agreement with available experimental findings.Comment: 11 pages, 4 figures, 1 table, submitted to J. Nanopart. Re

Vertical Field Effect Transistor based on Graphene-WS2 Heterostructures for flexible and transparent electronics

The celebrated electronic properties of graphene have opened way for materials just one-atom-thick to be used in the post-silicon electronic era. An important milestone was the creation of heterostructures based on graphene and other two-dimensional (2D) crystals, which can be assembled in 3D stacks with atomic layer precision. These layered structures have already led to a range of fascinating physical phenomena, and also have been used in demonstrating a prototype field effect tunnelling transistor - a candidate for post-CMOS technology. The range of possible materials which could be incorporated into such stacks is very large. Indeed, there are many other materials where layers are linked by weak van der Waals forces, which can be exfoliated and combined together to create novel highly-tailored heterostructures. Here we describe a new generation of field effect vertical tunnelling transistors where 2D tungsten disulphide serves as an atomically thin barrier between two layers of either mechanically exfoliated or CVD-grown graphene. Our devices have unprecedented current modulation exceeding one million at room temperature and can also operate on transparent and flexible substrates

Controlled Synthesis of Monolayer Graphene Toward Transparent Flexible Conductive Film Application

We demonstrate the synthesis of monolayer graphene using thermal chemical vapor deposition and successive transfer onto arbitrary substrates toward transparent flexible conductive film application. We used electron-beam-deposited Ni thin film as a synthetic catalyst and introduced a gas mixture consisting of methane and hydrogen. To optimize the synthesis condition, we investigated the effects of synthetic temperature and cooling rate in the ranges of 850–1,000°C and 2–8°C/min, respectively. It was found that a cooling rate of 4°C/min after 1,000°C synthesis is the most effective condition for monolayer graphene production. We also successfully transferred as-synthesized graphene films to arbitrary substrates such as silicon-dioxide-coated wafers, glass, and polyethylene terephthalate sheets to develop transparent, flexible, and conductive film application

Uniaxial strain in graphene by Raman spectroscopy: G peak splitting, Grüneisen parameters, and sample orientation

Graphene is the two-dimensional building block for carbon allotropes of every other dimensionality. Since its experimental discovery, graphene continues to attract enormous interest, in particular as a new kind of matter, in which electron transport is governed by a Dirac-like wave equation, and as a model system for studying electronic and phonon properties of other, more complex, graphitic materials[1-4]. Here, we uncover the constitutive relation of graphene and probe new physics of its optical phonons, by studying its Raman spectrum as a function of uniaxial strain. We find that the doubly degenerate E2g optical mode splits in two components, one polarized along the strain and the other perpendicular to it. This leads to the splitting of the G peak into two bands, which we call G+ and G-, by analogy with the effect of curvature on the nanotube G peak[5-7]. Both peaks red shift with increasing strain, and their splitting increases, in excellent agreement with first-principles calculations. Their relative intensities are found to depend on light polarization, which provides a useful tool to probe the graphene crystallographic orientation with respect to the strain. The singly degenerate 2D and 2D' bands also red shift, but do not split for small strains. We study the Gruneisen parameters for the phonons responsible for the G, D and D' peaks. These can be used to measure the amount of uniaxial or biaxial strain, providing a fundamental tool for nanoelectronics, where strain monitoring is of paramount importance[8, 9

Snap-through instability of graphene on substrates

We determine the graphene morphology regulated by substrates with herringbone and checkerboard surface corrugations. As the graphene/substrate interfacial bonding energy and the substrate surface roughness vary, the graphene morphology snaps between two distinct states: 1) closely conforming to the substrate and 2) remaining nearly flat on the substrate. Such a snapthrough instability of graphene can potentially lead to desirable electronic properties to enable graphene-based devices.Comment: 13 pages, 4 figures; Nanoscale Research Letters, in press, 200

Graphene-protected copper and silver plasmonics.

Plasmonics has established itself as a branch of physics which promises to revolutionize data processing, improve photovoltaics, and increase sensitivity of bio-detection. A widespread use of plasmonic devices is notably hindered by high losses and the absence of stable and inexpensive metal films suitable for plasmonic applications. To this end, there has been a continuous search for alternative plasmonic materials that are also compatible with complementary metal oxide semiconductor technology. Here we show that copper and silver protected by graphene are viable candidates. Copper films covered with one to a few graphene layers show excellent plasmonic characteristics. They can be used to fabricate plasmonic devices and survive for at least a year, even in wet and corroding conditions. As a proof of concept, we use the graphene-protected copper to demonstrate dielectric loaded plasmonic waveguides and test sensitivity of surface plasmon resonances. Our results are likely to initiate wide use of graphene-protected plasmonics.SAIT GRO Program and EPSRC grant EP/K011022/1. Y.-J. Kim was supported by the Global Research Laboratory Program (2011-0021972) of the Ministry of Education, Science and Technology, Korea. The support of the Graphene Flagship project is acknowledged

The nature of localization in graphene under quantum Hall conditions

Particle localization is an essential ingredient in quantum Hall physics [1,2]. In conventional high mobility two-dimensional electron systems Coulomb interactions were shown to compete with disorder and to play a central role in particle localization [3]. Here we address the nature of localization in graphene where the carrier mobility, quantifying the disorder, is two to four orders of magnitude smaller [4,5,6,7,8,9,10]. We image the electronic density of states and the localized state spectrum of a graphene flake in the quantum Hall regime with a scanning single electron transistor [11]. Our microscopic approach provides direct insight into the nature of localization. Surprisingly, despite strong disorder, our findings indicate that localization in graphene is not dominated by single particle physics, but rather by a competition between the underlying disorder potential and the repulsive Coulomb interaction responsible for screening.Comment: 18 pages, including 5 figure