GaSb-based integrated lasers and photodetectors on a silicon-on-insulator waveguide circuit for sensing applications in the shortwave infrared

We report our results on GaSb photodiodes and lasers integrated on a Silicon-On-Insulator waveguide circuit. The photodiodes operate at room temperature with 0.4A/W responsivity for grating-assisted coupling and >1 A/W for an evanescent design. On the other hand, integrated Fabry-Perot lasers operate in continuous wave at room temperature with a threshold current of 49.7mA

InGaAsSb/GaSb lasers and photodetectors integrated on a silicon-on-insulator waveguide circuit for spectroscopic applications

International audienc

Study of evanescently-coupled and grating-assisted GaInAsSb photodiodes integrated on a silicon photonic chip

International audienc

Silicon-on-insulator spectrometers with integrated GaInAsSb photodiode array for wideband operation from 1500 to 2300 nm

Four echelle-type spectrometers with heterogeneously integrated GaInAsSb photodetectors on a silicon-on-insulator chip is realized. The operating wavelengths stretch from 1500 to 2300 nm. A maximum channel crosstalk of -10 dB, dark current of -2.5 mu A and responsivity of 0.61 A/W at 1530 nm and 0.7 A/W at 2200 nm were obtained

GeSn/Ge heterostructure short-wave infrared photodetectors on silicon

status: publishe

Lattice strain and tilt mapping in stressed Ge microstructures using X-ray Laue micro-diffraction and rainbow-filtering

Micro-Laue diffraction and simultaneous rainbow-filtered micro-diffraction were used to measure accurately the full strain tensor and the lattice orientation distribution at the sub-micron scale in highly strained, suspended Ge micro-devices. A numerical approach to obtain the full strain tensor from the deviatoric strain measurement alone is also demonstrated and used for faster full strain mapping. We performed the measurements in a series of micro-devices under either uniaxial or biaxial stress and found an excellent agreement with numerical simulations. This shows the superior potential of Laue micro-diffraction for the investigation of highly strained micro-devices.Comment: 28 pages, 10 figure

Silicon-on-insulator spectrometers with integrated GaInAsSb photodiodes for wide-band spectroscopy from 1510 to 2300 nm

International audienc