Formation of hydrogen impurity states in silicon and insulators at low implantation energies

The formation of hydrogen-like muonium (Mu) has been studied as a function of implantation energy in intrinsic Si, thin films of condensed van der Waals gases (N2, Ne, Ar, Xe), fused and crystalline quartz and sapphire. By varying the initial energy of positive muons (mu+) between 1 and 30 keV the number of electron-hole pairs generated in the ionization track of the mu+ can be tuned between a few and several thousand. The results show the strong suppression of the formation of those Mu states that depend on the availability of excess electrons. This indicates, that the role of H-impurity states in determining electric properties of semiconductors and insulators depends on the way how atomic H is introduced into the material.Comment: 4 pages, 4 enscapulated postscript figures, uses revtex4 twocolumn style to be published in Physical Review Letter

Depth dependent spin dynamics of canonical spin glass films: A low-energy muon spin rotation study

We have performed depth dependent muon spin rotation/relaxation studies of the dynamics of single layer films of {\it Au}Fe and {\it Cu}Mn spin glasses as a function of thickness and of its behavior as a function of distance from the vacuum interface (5-70 nm). A significant reduction in the muon spin relaxation rate as a function of temperature with respect to the bulk material is observed when the muons are stopped near (5-10 nm) the surface of the sample. A similar reduction is observed for the whole sample if the thickness is reduced to e.g. 20 nm and less. This reflects an increased impurity spin dynamics (incomplete freezing) close to the surface although the freezing temperature is only modestly affected by the dimensional reduction

Direct observation of non-local effects in a superconductor

We have used the technique of low energy muon spin rotation to measure the local magnetic field profile B(z) beneath the surface of a lead film maintained in the Meissner state (z depth from the surface, z <= 200 nm). The data unambiguously show that B(z) clearly deviates from an exponential law and represent the first direct, model independent proof for a non-local response in a superconductor.Comment: 5 pages, 3 figure

Observation of non-exponential magnetic penetration profiles in the Meissner state - A manifestation of non-local effects in superconductors

Implanting fully polarized low energy muons on the nanometer scale beneath the surface of a superconductor in the Meissner state enabled us to probe the evanescent magnetic field profile B(z)(0<z<=200nm measured from the surface). All the investigated samples [Nb: kappa \simeq 0.7(2), Pb: kappa \simeq 0.6(1), Ta: kappa \simeq 0.5(2)] show clear deviations from the simple exponential B(z) expected in the London limit, thus revealing the non-local response of these superconductors. From a quantitative analysis within the Pippard and BCS models the London penetration depth lambda_L is extracted. In the case of Pb also the clean limit coherence length xi0 is obtained. Furthermore we find that the temperature dependence of the magnetic penetration depth follows closely the two-fluid expectation 1/lambda^2 \propto 1-(T/T_c)^4. While B(z) for Nb and Pb are rather well described within the Pippard and BCS models, for Ta this is only true to a lesser degree. We attribute this discrepancy to the fact that the superfluid density is decreased by approaching the surface on a length scale xi0. This effect, which is not taken self-consistently into account in the mentioned models, should be more pronounced in the lowest kappa regime consistently with our findings.Comment: accepted in PRB 14 pages, 17 figure

Direct observation of the oxygen isotope effect on the in-plane magnetic field penetration depth in optimally doped YBa2_2Cu3_3O7−δ_{7-\delta}

We report the first direct observation of the oxygen-isotope ($^{16}$O/$^{18}$O) effect on the in-plane penetration depth $\lambda_{ab}$ in a nearly optimally doped YBa$_2$Cu$_3$O$_{7-\delta}$ film using the novel low-energy muon-spin rotation technique. Spin polarized low energy muons are implanted in the film at a known depth $z$ beneath the surface and precess in the local magnetic field $B(z)$. This feature allows us to measure directly the profile $B(z)$ of the magnetic field inside the superconducting film in the Meissner state and to make a model independent determination of $\lambda_{ab}$. A substantial isotope shift $\Delta\lambda_{ab}/\lambda_{ab}=2.8(7)$% at 4 K is observed, implying that the in-plane effective supercarrier mass $m_{ab}^\ast$ is oxygen-isotope dependent with $\Delta m_{ab}^\ast/m_{ab}^\ast = 5.5(1.4)$.Comment: 4 pages, 2 figure

Thin Film, Near-Surface and Multi-Layer Investigations by Low-Energy μ +SR

At the Paul Scherrer Institute (PSI, Villigen, Switzerland) the beam of low-energy positive polarised muons (LE-μ +) with tunable energy between 0.5 and 30keV allows the extension of the muon-spin-rotation technique (μSR) to studies on thin films and multi-layers (LE-μ +SR). The range of these muons in solids covers the near-surface region up to implantation depths of about 300nm. As a sensitive local magnetic probe with a complementary observational time window to other techniques LE-μ +SR offers the unique possibility to gain new insights in these nano-scale objects. After outlining the current status of the LE-μ + beam line we demonstrate the potential of this new technique by presenting the results of recent experiments: i) the direct observation of non-local effects in a superconducting Pb film, ii) the oxygen isotope effect on the in-plane penetration depth in optimally doped $${\text{YBa}}_{2} {\text{Cu}}_{3} {\text{O}}_{{7 - \delta }}$$ , and iii) the first observation of the conduction electron spin polarisation in the Ag spacer of a Fe/Ag/Fe tri-laye

Muonium formation at ke V energies

Charge differentiation in mu(+) or muonium (Mu) as a consequence of the slowing down of mu+ in matter is of fundamental interest in the muSR method. It is also of relevance for understanding the moderation process of mu(+) in van der Waals solids like s-Ne, s-Ar or s-N-2, which are the most suitable materials to generate epithermal mu(+) serving as a source for low-energy mu(+) (LE-mu(+)) beams. The LE-mu(+) beam at the Paul Scherrer Institut (PSI) allows us to study the formation of Mu at low implantation energies (0.5-30 keV) in insulators and semiconductors. These investigations may help to clarify the interaction between the mu(+) and the electrons of its ionisation track since the number of track electrons can be tuned by varying the implantation energy. We present the first results of LE-muSR investigations on thin van der Waals solids (s-Ar, s-Xe), fused quartz (SUPRASIL) and a quartz crystal, where the mu(+) and Mu fractions were measured as a function of the implantation energy. (C) 2002 Elsevier Science B.V. All rights reserved

Antiferromagnetic transition in epitaxial strained La2CuO4 thin films

Low-energy µSR experiments were carried out on epitaxial strained La2CuO4 thin films of a thickness of only 12 nm. We could determine magnetic transitions at T-N = 174(3) K for La2CuO4 on SrLaAlO4 and T-N = 168(2) K for La2CuO4 on SrTiO3.status: publishe

Thin Film, Near-Surface and Multi-Layer Investigations by Low-Energy μ+SR

ISSN:0304-3843ISSN:0304-3834ISSN:1572-954