Analysis of the performance of tapered semiconductor optical amplifiers: role of the taper angle

The beam properties of tapered semiconductor optical amplifiers emitting at 1.57 μm are analyzed by means of simulations with a self-consistent steady state electro-optical and thermal simulator. The results indicate that the self-focusing caused by carrier lensing is delayed to higher currents for devices with taper angle slightly higher than the free diffraction angle

Estimación del error en la medida del factor de ensanchamiento de línea en láseres de semiconductor

En el presente trabajo se propone un método para la medida y la estimación del error de la misma en la caracterización del factor de ensanchamiento de línea (parámetro α) de los láseres de semiconductor. La técnica propuesta se basa en el cálculo del parámetro α a partir de la medida de la intensidad y de la frecuencia instantánea de los pulsos generados por un laser de semiconductor conmutado en ganancia. El error de medida se estima mediante la comparación entre el espectro medido y el reconstruido utilizando los perfiles temporales de amplitud y fase de los pulsos generados. El método se ha aplicado a un laser DFB, obteniendo un error de medida menor del 5 %

Evaluation of 2.1µm DFB lasers for space applications

This paper presents the results obtained in the frame of an ESA-funded project called “Screening and Preevaluation of Shortwave Infrared Laser Diode for Space Application” with the objective of verifying the maturity of state of the art SWIR DFB lasers at 2.1µm to be used for space applications (mainly based on the occultation measurement principle and spectroscopy). The paper focus on the functional and environmental evaluation test plan. It includes high precision characterization, mechanical test (vibration and SRS shocks), thermal cycling, gamma and proton radiation tests, life test and some details of the Destructive Physical Analysis performed. The electro-optical characterization includes measurements of the tuning capabilities of the laser both by current and by temperature, the wavelength stability and the optical power versus laser current

Gain-switched semiconductor lasers with pulsed excitation and optical injection for dual-comb spectroscopy

In this work we demonstrate the capability of two gain-switched optically injected semiconductor lasers to perform high-resolution dual-comb spectroscopy. The use of low duty cycle pulse trains to gain switch the lasers, combined with optical injection, allows us to obtain flat-topped optical frequency combs with 350 optical lines (within 10 dB) spaced by 100 MHz. These frequency combs significantly improve the spectral resolution reported so far on dual-comb spectroscopy with gain-switched laser diodes. We evaluate the performance of our system by measuring the transmission profile of an absorption line of H13CN at the C-band, analyzing the attainable signal-to-noise ratio for a range of averaging times

Dynamical characterization of monolithic MOPAs emitting at 1.5 μ�m

Eye-safety requirements in important applications like LIDAR or Free Space Optical Communications make specifically interesting the generation of high power, short optical pulses at 1.5 um. Moreover, high repetition rates allow reducing the error and/or the measurement time in applications involving pulsed time-of-flight measurements, as range finders, 3D scanners or traffic velocity controls. The Master Oscillator Power Amplifier (MOPA) architecture is an interesting source for these applications since large changes in output power can be obtained at GHz rates with a relatively small modulation of the current in the Master Oscillator (MO). We have recently demonstrated short optical pulses (100 ps) with high peak power (2.7 W) by gain switching the MO of a monolithically integrated 1.5 um MOPA. Although in an integrated MOPA the laser and the amplifier are ideally independent devices, compound cavity effects due to the residual reflectance at the different interfaces are often observed, leading to modal instabilities such as self-pulsations

Analysis of mode competition in a monolithic master- oscillator power‐amplifier emitting at 1.5 μm

The optical and radio-frequency spectra of a monolithic master-oscillator power-amplifier emitting at 1.5 ?m have been analyzed in a wide range of steady-state injection conditions. The analysis of the spectral maps reveals that, under low injection current of the master oscillator, the device operates in two essentially different operation modes depending on the current injected into the amplifier section. The regular operation mode with predominance of the master oscillator alternates with lasing of the compound cavity modes allowed by the residual reflectance of the amplifier front facet. The quasi-periodic occurrence of these two regimes as a function of the amplifier current has been consistently interpreted in terms of a thermally tuned competition between the modes of the master oscillator and the compound cavity modes

Simulation of high brightness tapered lasers

Tapered semiconductor lasers have demonstrated both high power and good beam quality, and are of primary interest for those applications demanding high brightness optical sources. The complex non-linear interaction between the optical field and the active material requires accurate numerical simulations to improve the device design and to understand the underlying physics. In this work we present results on the design and simulation of tapered lasers by means of a Quasi- 3D steady-state single-frequency model. The results are compared with experiments on Al-free active region devices emitting at 1060 nm. The performance of devices based on symmetric and asymmetric epitaxial designs is compared and the influence of the design on the beam properties is analyzed. The role of thermal effects on the beam properties is experimentally characterized and analyzed by means of the numerical simulations. Tapered lasers with separate electrical contacts in the straight and tapered sections, based on symmetrical and asymmetrical epitaxial designs are also presented and analyze

High data rate modulation of high power 1060-nm DBR tapered lasers with separate contacts

Direct optical modulation at 2.5 Gb/s with amplitude of more than 0.5 W has been demonstrated in single longitudinal mode distributed Bragg reflector tapered lasers emitting at 1060 nm with separated injection of the ridge waveguide and tapered sections. The modulating signal of ~110 mA peak to peak was applied to the ridge waveguide section, yielding a high modulation efficiency of ~5 W/A. The large-signal frequency response of the experimental set-up was limited by the bandwidth of the electrical amplifier rather than by the internal dynamics of the laser, indicating that higher bit rates could be achieved with improved driving electronics

High brightness semiconductor lasers as transmitters for space lidar systems

High brightness semiconductor lasers are potential transmitters for future space lidar systems. In the framework of the European Project BRITESPACE, we propose an all-semiconductor laser source for an Integrated Path Differential Absorption lidar system for column-averaged measurements of atmospheric CO2 in future satellite missions. The complete system architecture has to be adapted to the particular emission properties of these devices using a Random Modulated Continuous Wave approach. We present the initial experimental results of the InGaAsP/InP monolithic Master Oscillator Power Amplifiers, providing the ON and OFF wavelengths close to the selected absorption line around 1572 nm

Simulation of facet heating in high-power red lasers

A two-dimensional self-consistent laser model has been used for the simulation of the facet heating of red emitting AlGaInP lasers. It solves in the steady-state the complete semiconductor optoelectronic and thermal equations in the epitaxial and longitudinal directions and takes into account the population of different conduction band valleys. The model considers the possibility of two independent mechanisms contributing to the facet heating: recombination at surface traps and optical absorption at the facet. The simulation parameters have been calibrated by comparison with measurements of the temperature dependence of the threshold current and slope efficiency of broad-area lasers. Facet temperature has been measured by micro-Raman spectrometry in devices with standard and non absorbing mirrors evidencing an effective decrease of the facet heating due to the non absorbing mirrors. A good agreement between experimental values and calculations is obtained for both devices when a certain amount of surface traps and optical absorption is assumed. A simulation analysis of the effect of non absorbing mirrors in the reduction of facet heating in terms of temperature, carrier density, material gain and Shockly-Read-Hall recombination rate profiles is provided