Suitable thicknesses of base metal and interlayer, and evolution of phases for Ag/Sn/Ag transient liquid-phase joints used for power die attachment

Both real Si insulated gate bipolar transistors (IGBT) with conventional Ni\Ag metallization and a dummy Si die with thickened Ni\Ag metallization have been bonded on Ag foils electroplated with 2.7 m and 6.8 m thick Sn as an interlayer at 250ºC for 0 min, 40 min and 640 min. From microstructure characterization of the resulting joints, suitable thicknesses are suggested for the Ag base metal and the Sn interlayer for Ag/Sn/Ag transient liquid phase (TLP) joints used in power die attachment, and the diffusivities of Ag and Sn in the Ag phase are extracted. In combination with the kinetic constants of Ag3Sn growth and diffusivities of Ag and Sn in Ag reported in the literature, the extracted diffusivities of Ag and Sn in Ag phase are also used to simulate and predict the diffusion-controlled growth and evolution of phases in the Ag/Sn/Ag TLP joints during an extended bonding process and in service

Wafer-level SLID bonding for MEMS encapsulation

Hermetic packaging is often an essential requirement to enable proper functionality throughout the device's lifetime and ensure the optimal performance of a micro electronic mechanical system (MEMS) device. Solid-liquid interdiffusion (SLID) bonding is a novel and attractive way to encapsulate MEMS devices at a wafer level. SLID bonding utilizes a low-melting-point metal to reduce the bonding process temperature; and metallic seal rings take out less of the valuable surface area and have a lower gas permeability compared to polymer or glass-based sealing materials. In addition, ductile metals can adopt mechanical and thermo-mechanical stresses during their service lifetime, which improves their reliability. In this study, the principles of Au-Sn and Cu-Sn SLID bonding are presented, which are meant to be used for wafer-level hermetic sealing of MEMS resonators. Seal rings in 15.24 cm silicon wafers were bonded at a width of 60 µm, electroplated, and used with Au-Sn and Cu-Sn layer structures. The wafer bonding temperature varied between 300 °C and 350 °C, and the bonding force was 3.5 kN under the ambient pressure, that is, it was less than 0.1 Pa. A shear test was used to compare the mechanical properties of the interconnections between both material systems. In addition, important factors pertaining to bond ring design are discussed according to their effects on the failure mechanisms. The results show that the design of metal structures can significantly affect the reliability of bond rings

Electric field effect in correlated oxide systems

Semiconducting field-effect transistors are the workhorses of the modern electronics era. Recently, application of the field-effect approach to compounds other than semiconductors has created opportunities to electrostatically modulate types of correlated electron behaviour—including high-temperature superconductivity and colossal magnetoresistance—and potentially tune the phase transitions in such systems. Here we provide an overview of the achievements in this field and discuss the opportunities brought by the field-effect approach