6,874 research outputs found
Mission analysis data for inclined geosynchronous orbits, part 1
Data needed for preliminary design of inclined geosynchronous missions are provided. The inertial and Earth fixed coordinate systems are described, as well as orbit parameters and elements. The complete family of geosynchronous orbits is discussed. It is shown that circular inclined geosynchronous orbits comprise only one set in this family. The major orbit perturbation and their separate effects on the geosynchronous orbit are discussed. Detailed information on the orbit perturbation of inclined circular geosynchronous orbits is given, with emphasis on time history data of certain orbital elements. Orbit maintenance delta velocity (V) requirements to counteract the major orbit perturbations are determined in order to provide order of magnitude estimates and to show the effects of orbit inclination on delta V. Some of the considerations in mission design for a multisatellite system, such as a halo orbit constellation, are discussed
Spatially Resolved Raman Spectroscopy of Single- and Few-Layer Graphene
We present Raman spectroscopy measurements on single- and few-layer graphene
flakes. Using a scanning confocal approach we collect spectral data with
spatial resolution, which allows us to directly compare Raman images with
scanning force micrographs. Single-layer graphene can be distinguished from
double- and few-layer by the width of the D' line: the single peak for
single-layer graphene splits into different peaks for the double-layer. These
findings are explained using the double-resonant Raman model based on ab-initio
calculations of the electronic structure and of the phonon dispersion. We
investigate the D line intensity and find no defects within the flake. A finite
D line response originating from the edges can be attributed either to defects
or to the breakdown of translational symmetry
Raman imaging of doping domains in graphene on SiO2
We present spatially resolved Raman images of the G and 2D lines of
single-layer graphene flakes. The spatial fluctuations of G and 2D lines are
correlated and are thus shown to be affiliated with local doping domains. We
investigate the position of the 2D line -- the most significant Raman peak to
identify single-layer graphene -- as a function of charging up to |n|~4 10^12
cm^-2. Contrary to the G line which exhibits a strong and symmetric stiffening
with respect to electron and hole-doping, the 2D line shows a weak and slightly
asymmetric stiffening for low doping. Additionally, the line width of the 2D
line is, in contrast to the G line, doping-independent making this quantity a
reliable measure for identifying single-layer graphene
Local oxidation of Ga[Al]As heterostructures with modulated tip-sample voltages
Nanolithography based on local oxidation with a scanning force microscope has
been performed on an undoped GaAs wafer and a Ga[Al]As heterostructure with an
undoped GaAs cap layer and a shallow two-dimensional electron gas. The oxide
growth and the resulting electronic properties of the patterned structures are
compared for constant and modulated voltage applied to the conductive tip of
the scanning force microscope. All the lithography has been performed in
non-contact mode. Modulating the applied voltage enhances the aspect ratio of
the oxide lines, which significantly strengthens the insulating properties of
the lines on GaAs. In addition, the oxidation process is found to be more
reliable and reproducible. Using this technique, a quantum point contact and a
quantum wire have been defined and the electronic stability, the confinement
potential and the electrical tunability are demonstrated to be similar to the
oxidation with constant voltage.Comment: 7 pages, 7 figures, accepted by J. Appl. Phy
Local gating of a graphene Hall bar by graphene side gates
We have investigated the magnetotransport properties of a single-layer
graphene Hall bar with additional graphene side gates. The side gating in the
absence of a magnetic field can be modeled by considering two parallel
conducting channels within the Hall bar. This results in an average penetration
depth of the side gate created field of approx. 90 nm. The side gates are also
effective in the quantum Hall regime, and allow to modify the longitudinal and
Hall resistances
Tunable Coulomb blockade in nanostructured graphene
We report on Coulomb blockade and Coulomb diamond measurements on an etched,
tunable single-layer graphene quantum dot. The device consisting of a graphene
island connected via two narrow graphene constrictions is fully tunable by
three lateral graphene gates. Coulomb blockade resonances are observed and from
Coulomb diamond measurements a charging energy of ~3.5 meV is extracted. For
increasing temperatures we detect a peak broadening and a transmission increase
of the nanostructured graphene barriers
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