Synthesis and characterization by experimental and theory research suitable on the CdS and CdO materials

In this paper, we have compared and analyzed experimental and theoretical research on A2B6 types semiconductor materials CdS and CdO. The XRD spectra of the samples were examined using an atomic force microscope and X-ray diffraction microscopy. During film deposition, the temperature of the crucible with a source (CdS) varied in the range Tsourse ≈ 800 ÷ 850°C, and the substrate temperature was maintained within the range Tp ≈ 250 ÷ 270°C. In this case, to ensure the reproducibility of the structures, a shutter was used, with the help of which the CdS deposition time was set, which ensured that the film thickness was the same from experiment to experiment

Global, regional, and national sex-specific burden and control of the HIV epidemic, 1990–2019, for 204 countries and territories: the Global Burden of Diseases Study 2019

Background: The sustainable development goals (SDGs) aim to end HIV/AIDS as a public health threat by 2030. Understanding the current state of the HIV epidemic and its change over time is essential to this effort. This study assesses the current sex-specific HIV burden in 204 countries and territories and measures progress in the control of the epidemic. Methods: To estimate age-specific and sex-specific trends in 48 of 204 countries, we extended the Estimation and Projection Package Age-Sex Model to also implement the spectrum paediatric model. We used this model in cases where age and sex specific HIV-seroprevalence surveys and antenatal care-clinic sentinel surveillance data were available. For the remaining 156 of 204 locations, we developed a cohort-incidence bias adjustment to derive incidence as a function of cause-of-death data from vital registration systems. The incidence was input to a custom Spectrum model. To assess progress, we measured the percentage change in incident cases and deaths between 2010 and 2019 (threshold >75% decline), the ratio of incident cases to number of people living with HIV (incidence-to-prevalence ratio threshold <0·03), and the ratio of incident cases to deaths (incidence-to-mortality ratio threshold <1·0). Findings: In 2019, there were 36·8 million (95% uncertainty interval [UI] 35·1–38·9) people living with HIV worldwide. There were 0·84 males (95% UI 0·78–0·91) per female living with HIV in 2019, 0·99 male infections (0·91–1·10) for every female infection, and 1·02 male deaths (0·95–1·10) per female death. Global progress in incident cases and deaths between 2010 and 2019 was driven by sub-Saharan Africa (with a 28·52% decrease in incident cases, 95% UI 19·58–35·43, and a 39·66% decrease in deaths, 36·49–42·36). Elsewhere, the incidence remained stable or increased, whereas deaths generally decreased. In 2019, the global incidence-to-prevalence ratio was 0·05 (95% UI 0·05–0·06) and the global incidence-to-mortality ratio was 1·94 (1·76–2·12). No regions met suggested thresholds for progress. Interpretation: Sub-Saharan Africa had both the highest HIV burden and the greatest progress between 1990 and 2019. The number of incident cases and deaths in males and females approached parity in 2019, although there remained more females with HIV than males with HIV. Globally, the HIV epidemic is far from the UNAIDS benchmarks on progress metrics. Funding: The Bill & Melinda Gates Foundation, the National Institute of Mental Health of the US National Institutes of Health (NIH), and the National Institute on Aging of the NIH

Global, regional, and national sex-specific burden and control of the HIV epidemic, 1990-2019, for 204 countries and territories: the Global Burden of Diseases Study 2019

Background: The sustainable development goals (SDGs) aim to end HIV/AIDS as a public health threat by 2030. Understanding the current state of the HIV epidemic and its change over time is essential to this effort. This study assesses the current sex-specific HIV burden in 204 countries and territories and measures progress in the control of the epidemic. Methods: To estimate age-specific and sex-specific trends in 48 of 204 countries, we extended the Estimation and Projection Package Age-Sex Model to also implement the spectrum paediatric model. We used this model in cases where age and sex specific HIV-seroprevalence surveys and antenatal care-clinic sentinel surveillance data were available. For the remaining 156 of 204 locations, we developed a cohort-incidence bias adjustment to derive incidence as a function of cause-of-death data from vital registration systems. The incidence was input to a custom Spectrum model. To assess progress, we measured the percentage change in incident cases and deaths between 2010 and 2019 (threshold >75% decline), the ratio of incident cases to number of people living with HIV (incidence-to-prevalence ratio threshold <0·03), and the ratio of incident cases to deaths (incidence-to-mortality ratio threshold <1·0). Findings: In 2019, there were 36·8 million (95% uncertainty interval [UI] 35·1–38·9) people living with HIV worldwide. There were 0·84 males (95% UI 0·78–0·91) per female living with HIV in 2019, 0·99 male infections (0·91–1·10) for every female infection, and 1·02 male deaths (0·95–1·10) per female death. Global progress in incident cases and deaths between 2010 and 2019 was driven by sub-Saharan Africa (with a 28·52% decrease in incident cases, 95% UI 19·58–35·43, and a 39·66% decrease in deaths, 36·49–42·36). Elsewhere, the incidence remained stable or increased, whereas deaths generally decreased. In 2019, the global incidence-to-prevalence ratio was 0·05 (95% UI 0·05–0·06) and the global incidence-to-mortality ratio was 1·94 (1·76–2·12). No regions met suggested thresholds for progress. Interpretation: Sub-Saharan Africa had both the highest HIV burden and the greatest progress between 1990 and 2019. The number of incident cases and deaths in males and females approached parity in 2019, although there remained more females with HIV than males with HIV. Globally, the HIV epidemic is far from the UNAIDS benchmarks on progress metrics. Funding: The Bill & Melinda Gates Foundation, the National Institute of Mental Health of the US National Institutes of Health (NIH), and the National Institute on Aging of the NIH

Global, regional, and national sex-specific burden and control of the HIV epidemic, 1990-2019, for 204 countries and territories: the Global Burden of Diseases Study 2019.

BACKGROUND: The sustainable development goals (SDGs) aim to end HIV/AIDS as a public health threat by 2030. Understanding the current state of the HIV epidemic and its change over time is essential to this effort. This study assesses the current sex-specific HIV burden in 204 countries and territories and measures progress in the control of the epidemic. METHODS: To estimate age-specific and sex-specific trends in 48 of 204 countries, we extended the Estimation and Projection Package Age-Sex Model to also implement the spectrum paediatric model. We used this model in cases where age and sex specific HIV-seroprevalence surveys and antenatal care-clinic sentinel surveillance data were available. For the remaining 156 of 204 locations, we developed a cohort-incidence bias adjustment to derive incidence as a function of cause-of-death data from vital registration systems. The incidence was input to a custom Spectrum model. To assess progress, we measured the percentage change in incident cases and deaths between 2010 and 2019 (threshold >75% decline), the ratio of incident cases to number of people living with HIV (incidence-to-prevalence ratio threshold <0·03), and the ratio of incident cases to deaths (incidence-to-mortality ratio threshold <1·0). FINDINGS: In 2019, there were 36·8 million (95% uncertainty interval [UI] 35·1-38·9) people living with HIV worldwide. There were 0·84 males (95% UI 0·78-0·91) per female living with HIV in 2019, 0·99 male infections (0·91-1·10) for every female infection, and 1·02 male deaths (0·95-1·10) per female death. Global progress in incident cases and deaths between 2010 and 2019 was driven by sub-Saharan Africa (with a 28·52% decrease in incident cases, 95% UI 19·58-35·43, and a 39·66% decrease in deaths, 36·49-42·36). Elsewhere, the incidence remained stable or increased, whereas deaths generally decreased. In 2019, the global incidence-to-prevalence ratio was 0·05 (95% UI 0·05-0·06) and the global incidence-to-mortality ratio was 1·94 (1·76-2·12). No regions met suggested thresholds for progress. INTERPRETATION: Sub-Saharan Africa had both the highest HIV burden and the greatest progress between 1990 and 2019. The number of incident cases and deaths in males and females approached parity in 2019, although there remained more females with HIV than males with HIV. Globally, the HIV epidemic is far from the UNAIDS benchmarks on progress metrics. FUNDING: The Bill & Melinda Gates Foundation, the National Institute of Mental Health of the US National Institutes of Health (NIH), and the National Institute on Aging of the NIH

Low- and high-order nonlinear optical characterization of C

Third- and higher-order nonlinear optical processes in fullerenes were studies to define the influence of low-order nonlinearities on the high-order harmonic generation in these media. We measured the nonlinear absorption coefficients of the C60:toluene solution using the 532 and 1064 nm, 50 ps pulses. The high-order harmonic generation was studied during propagation of the 790 nm, 150 fs pulses through the plasmas produced on surfaces containing fullerene powder. These studies have shown that the low-order nonlinearities of fullerenes have no impact on the generation of harmonics in such mediums in the vacuum ultraviolet range at optimal intensity of laser radiation

Synthesis and characterization by experimental and theory research suitable on the CdS and CdO materials

In this paper, we have compared and analyzed experimental and theoretical research on A2B6 types semiconductor materials CdS and CdO. The XRD spectra of the samples were examined using an atomic force microscope and X-ray diffraction microscopy. During film deposition, the temperature of the crucible with a source (CdS) varied in the range Tsourse ≈ 800 ÷ 850°C, and the substrate temperature was maintained within the range Tp ≈ 250 ÷ 270°C. In this case, to ensure the reproducibility of the structures, a shutter was used, with the help of which the CdS deposition time was set, which ensured that the film thickness was the same from experiment to experiment

Comunidad Valenciana: La Economía de la Comunidad Valenciana, balance de la situación de 2000

Este artículo realiza un balance de situación de la economía de la Comunidad Valenciana en 2000. En el primer punto abordaremos la evolución del entorno económico internacional y nacional a lo largo de dicho ejercicio. En el segundo se analiza la evolución de la economía de la Comunidad Valenciana, tomando como referencia el total nacional y las diferentes Comunidades Autónomas, desde cuatro puntos de vista: en primer lugar, desde la óptica de la producción, a través de la Contabilidad Trimestral; en segundo lugar se muestra la dinámica del mercado de trabajo en 2000, en el tercero se expone la evolución de los precios y salarios, en el cuarto se completa el análisis mostrando la evolución más reciente de la economía valenciana a través de los diferentes indicadores de coyuntura disponibles. En el punto tercero se comentan los escenarios de comportamiento futuro de la economía de la Comunidad Valenciana, enmarcadas en el contexto internacional y nacional

Characterisation of SnSe thin films fabricated by chemical molecular beam deposition for use in thin film solar cells

SnSe thin films were fabricated the first time by chemical molecular beam deposition (CMBD) in atmospheric pressure hydrogen flow using polycrystalline tin selenium (SnSe) precursors. The morphological and electrical properties of the films were studied as a function of the precursor's composition and the substrate temperature. Experimental data indicate that in the resulting thin films Se enrichment takes place at low substrate temperatures, despite the different compositions of the SnSe precursor during the synthesis. In this case, the grain sizes of the films vary in the range of (8-20) mu m, depending on the substrate temperature. In addition, X-ray diffraction analysis of the samples shows that the films have an orthorhombic crystalline structure. The electrical conductivity of films measured by van der Pauw method varies between 6 and 90 (Omega x cm)(-1). The optical measurements on selected SnSe thin films illustrate that the samples have an optical bandgap of (1.1-1.2) eV and the absorption coefficient of similar to 10(5) cm(-1), which is suitable for thin film solar cells