First-principles study of spontaneous polarization in multiferroic BiFeO3_3

The ground-state structural and electronic properties of ferroelectric BiFeO$_3$ are calculated using density functional theory within the local spin-density approximation and the LSDA+U method. The crystal structure is computed to be rhombohedral with space group $R3c$, and the electronic structure is found to be insulating and antiferromagnetic, both in excellent agreement with available experiments. A large ferroelectric polarization of 90-100 $\mu$C/cm$^2$ is predicted, consistent with the large atomic displacements in the ferroelectric phase and with recent experimental reports, but differing by an order of magnitude from early experiments. One possible explanation is that the latter may have suffered from large leakage currents. However both past and contemporary measurements are shown to be consistent with the modern theory of polarization, suggesting that the range of reported polarizations may instead correspond to distinct switching paths in structural space. Modern measurements on well-characterized bulk samples are required to confirm this interpretation.Comment: (9 pages, 5 figures, 5 tables

Origin of magnetoelectric behavior in BiFeO3_3

The magnetoelectric behavior of BiFeO$_3$ has been explored on the basis of accurate density functional calculations. The structural, electronic, magnetic, and ferroelectric properties of BiFeO$_3$ are predicted correctly without including strong correlation effect in the calculation. Moreover, the experimentally-observed elongation of cubic perovskite-like lattice along the [111] direction is correctly reproduced. At high pressure we predicted a pressure-induced structural transition and the total energy calculations at expanded lattice show two lower energy ferroelectric phases, closer in energy to the ground state phase. Band-structure calculations show that BiFeO$_3$ will be an insulator in A- and G-type antiferromagnetic phases and a metal in other magnetic configurations. Chemical bonding in BiFeO$_3$ has been analyzed using various tools and electron localization function analysis shows that stereochemically active lone-pair electrons at the Bi sites are responsible for displacements of the Bi atoms from the centro-symmetric to the noncentrosymmetric structure and hence the ferroelectricity. A large ferroelectric polarization (88.7 $\mu$C/cm$^{2}$) is predicted in accordance with recent experimental findings. The net polarization is found to mainly ($>$ 98%) originate from Bi atoms. Moreover the large scatter in experimentally reported polarization values is due to the large anisotropy in the spontaneous polarization.Comment: 19 pages, 12 figures, 4 table

Electric-field switchable magnetization via the Dzyaloshinskii-Moriya interaction: FeTiO_3 versus BiFeO_3

In this article we review and discuss a mechanism for coupling between electric polarization and magnetization that can ultimately lead to electric-field switchable magnetization. The basic idea is that a ferroelectric distortion in an antiferromagnetic material can "switch on" the Dzyaloshinskii-Moriya interaction which leads to a canting of the antiferromagnetic sublattice magnetizations, and thus to a net magnetization. This magnetization M is coupled to the polarization P via a trilinear free energy contribution of the form P(M x L), where L is the antiferromagnetic order parameter. In particular, we discuss why such an invariant is present in R3c FeTiO_3 but not in the isostructural multiferroic BiFeO_3. Finally, we construct symmetry groups that in general allow for this kind of ferroelectrically-induced weak ferromagnetism.Comment: 15 pages, 3 images, to appear in J. Phys: Condens. Matter Focus Issue on Multiferroic

On the nature of steady states of spin distributions in the presence of spin-orbit interactions

In the presence of spin-orbit interactions, the steady state established for spin distributions in an electric field is qualitatively different from the steady state for charge distributions. This is primarily because the steady state established for spin distributions involves spin precession due to spin-orbit coupling. We demonstrate in this work that the spin density matrix in an external electric field acquires two corrections with different dependencies on the characteristic momentum scattering time. One part is associated with conserved spins, diverges in the clean limit and is responsible for the establishment of a steady-state spin density in electric fields. Another part is associated with precessing spins, is finite in the clean limit and is responsible for the establishment of spin currents in electric fields. Scattering between these distributions has important consequences for spin dynamics and spin-related effects in general, and explains some recent puzzling observations, which are captured by our unified theory.Comment: 10 pages, 1 figur

Ranks of ideals in inverse semigroups of difunctional binary relations

The set Dn of all difunctional relations on an n element set is an inverse semigroup under a variation of the usual composition operation. We solve an open problem of Kudryavtseva and Maltcev (Publ Math Debrecen 78(2):253–282, 2011), which asks: What is the rank (smallest size of a generating set) of Dn? Specifically, we show that the rank of Dn is B(n)+n, where B(n) is the nth Bell number. We also give the rank of an arbitrary ideal of Dn. Although Dn bears many similarities with families such as the full transformation semigroups and symmetric inverse semigroups (all contain the symmetric group and have a chain of J-classes), we note that the fast growth of rank(Dn) as a function of n is a property not shared with these other families

Rolled-Up Nanotech: Illumination-Controlled Hydrofluoric Acid Etching of AlAs Sacrificial Layers

<p>Abstract</p> <p>The effect of illumination on the hydrofluoric acid etching of AlAs sacrificial layers with systematically varied thicknesses in order to release and roll up InGaAs/GaAs bilayers was studied. For thicknesses of AlAs below 10 nm, there were two etching regimes for the area under illumination: one at low illumination intensities, in which the etching and releasing proceeds as expected and one at higher intensities in which the etching and any releasing are completely suppressed. The &#8220;etch suppression&#8221; area is well defined by the illumination spot, a feature that can be used to create heterogeneously etched regions with a high degree of control, shown here on patterned samples. Together with the studied self-limitation effect, the technique offers a way to determine the position of rolled-up micro- and nanotubes independently from the predefined lithographic pattern.</p

北海道における知的障がい者の就労支援に関する一考察

知的障がい者の就労について、北海道及び北海道教育委員会が進めている障が いのある人の就労支援の充実に向けた取組の状況を概観することに加えて、北海道内 の特別支援学校在籍者の約８割を占めている知的障がい特別支援学校の現状や就労支 援の取組について整理した。北海道において障がいある人の就労に大きな役割を果た してきた職親会の設立の経緯やなよろ地方職親会の障がい者雇用の状況やジョブコー チ養成研修の成果をまとめた。以上のことを踏まえて、知的障がい者の就労支援やキ ャリア教育の在り方について考察する

Impurity breakdown and terahertz luminescence in n-GaN epilayers under external electric field

We report on the observation and experimental studies of impurity breakdown and terahertz luminescence in n-GaN epilayers under external electric field. The terahertz electroluminescence is observed in a wide range of doping levels (at noncompensated donor density from 4.5×10[sup 16] to 3.4×10[sup 18] cm[sup −3]). Spectra of terahertz luminescence and photoconductivity are studied by means of Fourier transform spectrometry. Distinctive features of the spectra can be assigned to intracenter electron transitions between excited and ground states of silicon and oxygen donors and to hot electron transitions to the donor states.Peer reviewe

Size Quantization in Planar Graphene-Based Heterostructures: Pseudospin Splitting, Interface States, and Excitons

A planar quantum-well device made of a gapless graphene nanoribbon with edges in contact with gapped graphene sheets is examined. The size-quantization spectrum of charge carriers in an asymmetric quantum well is shown to exhibit a pseudospin splitting. Interface states of a new type arise from the crossing of dispersion curves of gapless and gapped graphene materials. The exciton spectrum is calculated for a planar graphene quantum well. The effect of an external electric field on the exciton spectrum is analyzed.Comment: 15 pages, 14 figure