365 research outputs found

    Controlling shot noise in double-barrier magnetic tunnel junctions

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    We demonstrate that shot noise in Fe/MgO/Fe/MgO/Fe double-barrier magnetic tunnel junctions is determined by the relative magnetic configuration of the junction and also by the asymmetry of the barriers. The proposed theoretical model, based on sequential tunneling through the system and including spin relaxation, successfully accounts for the experimental observations for bias voltages below 0.5V, where the influence of quantum well states is negligible. A weak enhancement of conductance and shot noise, observed at some voltages (especially above 0.5V), indicates the formation of quantum well states in the middle magnetic layer. The observed results open up new perspectives for a reliable magnetic control of the most fundamental noise in spintronic structures.Comment: 8 pages, 4 figure

    Symmetry broken spin reorientation transition in epitaxial MgO/Fe/MgO layers with competing anisotropies

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    The observation of perpendicular magnetic anisotropy (PMA) at MgO/Fe interfaces boosted the development of spintronic devices based on ultrathin ferromagnetic layers. Yet, magnetization reversal in the standard magnetic tunnel junctions (MTJs) with competing PMA and in-plane anisotropies remains unclear. Here we report on the field induced nonvolatile broken symmetry magnetization reorientation transition from the in-plane to the perpendicular (out of plane) state at temperatures below 50 K. The samples were 10 nm thick Fe in MgO/Fe(100)/MgO as stacking components of V/MgO/Fe/MgO/Fe/Co double barrier MTJs with an area of 20 × 20 μm2. Micromagnetic simulations with PMA and different second order anisotropies at the opposite Fe/MgO interfaces qualitatively reproduce the observed broken symmetry spin reorientation transition. Our findings open the possibilities to develop multistate epitaxial spintronics based on competing magnetic anisotropies.This work has been supported in part by Spanish MINECO (MAT2015-66000-P, EUIN2017-87474), SPINORBIT (MDM-2014-0377) and Comunidad de Madrid (NANOFRONTMAG-CM S2013/MIT-2850). C.T. acknowledges “EMERSPIN” grant ID PN-III-P4-ID-PCE-2016-0143, No. UEFISCDI:22/12.07.201

    Two types of all-optical magnetization switching mechanisms using femtosecond laser pulses

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    Magnetization manipulation in the absence of an external magnetic field is a topic of great interest, since many novel physical phenomena need to be understood and promising new applications can be imagined. Cutting-edge experiments have shown the capability to switch the magnetization of magnetic thin films using ultrashort polarized laser pulses. In 2007, it was first observed that the magnetization switching for GdFeCo alloy thin films was helicity-dependent and later helicity-independent switching was also demonstrated on the same material. Recently, all-optical switching has also been discovered for a much larger variety of magnetic materials (ferrimagnetic, ferromagnetic films and granular nanostructures), where the theoretical models explaining the switching in GdFeCo films do not appear to apply, thus questioning the uniqueness of the microscopic origin of all-optical switching. Here, we show that two different all-optical switching mechanisms can be distinguished; a "single pulse" switching and a "cumulative" switching process whose rich microscopic origin is discussed. We demonstrate that the latter is a two-step mechanism; a heat-driven demagnetization followed by a helicity-dependent remagnetization. This is achieved by an all-electrical and time-dependent investigation of the all-optical switching in ferrimagnetic and ferromagnetic Hall crosses via the anomalous Hall effect, enabling to probe the all-optical switching on different timescales.Comment: 1 page, LaTeX; classified reference number

    All-optical control of ferromagnetic thin films and nanostructures

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    The interplay of light and magnetism has been a topic of interest since the original observations of Faraday and Kerr where magnetic materials affect the light polarization. While these effects have historically been exploited to use light as a probe of magnetic materials there is increasing research on using polarized light to alter or manipulate magnetism. For instance deterministic magnetic switching without any applied magnetic fields using laser pulses of the circular polarized light has been observed for specific ferrimagnetic materials. Here we demonstrate, for the first time, optical control of ferromagnetic materials ranging from magnetic thin films to multilayers and even granular films being explored for ultra-high-density magnetic recording. Our finding shows that optical control of magnetic materials is a much more general phenomenon than previously assumed. These results challenge the current theoretical understanding and will have a major impact on data memory and storage industries via the integration of optical control of ferromagnetic bits.Comment: 21 pages, 11 figure

    Very low 1/f noise at room temperature in fully epitaxial Fe/MgO/Fe magnetic tunnel junctions

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    We report on room temperature 1/f noise in fully epitaxial Fe(45nm)/MgO(2.6nm)/Fe(10nm) magnetic tunnel junctions (MTJs) with and without carbon doping of the Fe/MgO bottom interface. We have found that the normalized noise (Hooge factor) asymmetry between parallel and antiparallel states may strongly depend on the applied bias and its polarity. Both types of MTJs exhibit record low Hooge factors being at least one order of magnitude smaller than previously reported.Comment: 9 pages, 3 figure
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