Stabilization of the cubic phase of HfO2 by Y addition in films grown by metal organic chemical vapor deposition

Addition of yttrium in HfO2 thin films prepared on silicon by metal organic chemical vapor deposition is investigated in a wide compositional range (2.0-99.5 at. %). The cubic structure of HfO2 is stabilized for 6.5 at. %. The permittivity is maximum for yttrium content of 6.5-10 at. %; in this range, the effective permittivity, which results from the contribution of both the cubic phase and silicate phase, is of 22. These films exhibit low leakage current density (5x10(-7) A/cm(2) at -1 V for a 6.4 nm film). The cubic phase is stable upon postdeposition high temperature annealing at 900 degrees C under NH3. (c) 2006 American Institute of Physics

Studies of colossal magnetoresistive oxides with radioactive isotopes

We propose to study Colossal Magnetoresistive (CMR) oxides with several nuclear techniques, which use radioactive elements at ISOLDE. Our aim is to provide local and element selective information on some of the doping mechanisms that rule electronic interactions and magnetoresistance, in a complementary way to the use of conventional characterisation techniques. Three main topics are proposed: \\ \\ a) Studies of local [charge and] structural modifications in antiferromagnetic LaMnO$_{3+ \delta}$ and La$_{1-x}$R$_{x}$MnO$_{3}$ with R=Ca and Cd, doped ferromagnetic systems with competing interactions: - research on the lattice site and electronic characterisation of the doping element. \\ \\ b) Studies of self doped La$_{x}$R$_{1-x}$MnO$_{3+\delta}$ systems, with oxygen and cation non-stoichiometry: -learning the role of defects in the optimisation of magnetoresistive properties. \\ \\ c) Probing the disorder and quenched random field effects in the vicinity of the charge or orbital Ordered/Ferromagnetic phase instability: - Investigating the local environment of ions at the Mn site, which trigger the ferromagnetic phase. Our approach to study these problems, combines complementary techniques such as Perturbed Angular Correlation, Emission Channeling and Electrical/Magnetic Measurements in pellets, single crystals and high quality thin films of CMR oxides doped with radioactive isotopes. Preliminary results obtained in La Cd MnO$_{3+x}$ pellets and thin films implanted with $^{111m}$Cd are also presented

Administration of single-dose GnRH agonist in the luteal phase in ICSI cycles: a meta-analysis

<p>Abstract</p> <p>Background</p> <p>The effects of gonadotrophin-releasing hormone agonist (GnRH-a) administered in the luteal phase remains controversial. This meta-analysis aimed to evaluate the effect of the administration of a single-dose of GnRH-a in the luteal phase on ICSI clinical outcomes.</p> <p>Methods</p> <p>The research strategy included the online search of databases. Only randomized studies were included. The outcomes analyzed were implantation rate, clinical pregnancy rate (CPR) per transfer and ongoing pregnancy rate. The fixed effects model was used for odds ratio. In all trials, a single dose of GnRH-a was administered at day 5/6 after ICSI procedures.</p> <p>Results</p> <p>All cycles presented statistically significantly higher rates of implantation (P < 0.0001), CPR per transfer (P = 0.006) and ongoing pregnancy (P = 0.02) in the group that received luteal-phase GnRH-a administration than in the control group (without luteal-phase-GnRH-a administration). When meta-analysis was carried out only in trials that had used long GnRH-a ovarian stimulation protocol, CPR per transfer (P = 0.06) and ongoing pregnancy (P = 0.23) rates were not significantly different between the groups, but implantation rate was significant higher (P = 0.02) in the group that received luteal-phase-GnRH-a administration. On the other hand, the results from trials that had used GnRH antagonist multi-dose ovarian stimulation protocol showed statistically significantly higher implantation (P = 0.0002), CPR per transfer (P = 0.04) and ongoing pregnancy rate (P = 0.04) in the luteal-phase-GnRH-a administration group. The majority of the results presented heterogeneity.</p> <p>Conclusions</p> <p>These findings demonstrate that the luteal-phase single-dose GnRH-a administration can increase implantation rate in all cycles and CPR per transfer and ongoing pregnancy rate in cycles with GnRH antagonist ovarian stimulation protocol. Nevertheless, by considering the heterogeneity between the trials, it seems premature to recommend the use of GnRH-a in the luteal phase. Additional randomized controlled trials are necessary before evidence-based recommendations can be provided.</p

Impact of volatile phenols and their precursors on wine quality and control measures of Brettanomyces/Dekkera yeasts

Volatile phenols are aromatic compounds and one of the key molecules responsible for olfactory defects in wine. The yeast genus Brettanomyces is the only major microorganism that has the ability to covert hydroxycinnamic acids into important levels of these compounds, especially 4-ethylphenol and 4-ethylguaiacol, in red wine. When 4-ethylphenols reach concentrations greater than the sensory threshold, all wine’s organoleptic characteristics might be influenced or damaged. The aim of this literature review is to provide a better understanding of the physicochemical, biochemical, and metabolic factors that are related to the levels of p-coumaric acid and volatile phenols in wine. Then, this work summarizes the different methods used for controlling the presence of Brettanomyces in wine and the production of ethylphenols

Does polycystic ovarian morphology influence the response to treatment with pulsatile GnRH in functional hypothalamic amenorrhea?

BACKGROUND: Pulsatile GnRH therapy is the gold standard treatment for ovulation induction in women having functional hypothalamic amenorrhea (FHA). The use of pulsatile GnRH therapy in FHA patients with polycystic ovarian morphology (PCOM), called “FHA-PCOM”, has been little studied in the literature and results remain contradictory. The aim of this study was to compare the outcomes of pulsatile GnRH therapy for ovulation induction between FHA and “FHA-PCOM” patients in order to search for an eventual impact of PCOM. METHODS: Retrospective study from August 2002 to June 2015, including 27 patients with FHA and 40 “FHA-PCOM” patients (85 and 104 initiated cycles, respectively) treated by pulsatile GnRH therapy for induction ovulation. RESULTS: The two groups were similar except for markers of PCOM (follicle number per ovary, serum Anti-Müllerian Hormone level and ovarian area), which were significantly higher in patients with “FHA-PCOM”. There was no significant difference between the groups concerning the ovarian response: with equivalent doses of GnRH, both groups had similar ovulation (80.8 vs 77.7 %, NS) and excessive response rates (12.5 vs 10.6 %, NS). There was no significant difference in on-going pregnancy rates (26.9 vs 20 % per initiated cycle, NS), as well as in miscarriage, multiple pregnancy or biochemical pregnancy rates. CONCLUSION: Pulsatile GnRH seems to be a successful and safe method for ovulation induction in “FHA-PCOM” patients. If results were confirmed by prospective studies, GnRH therapy could therefore become a first-line treatment for this specific population, just as it is for women with FHA without PCOM

Low-field magnetoresistance in perovskite manganites: Magnetic field, temperature, and current dependence

The low-field response from single bicrystal grain boundary junction of La0.7Sr0.3MnO3 has been investigated. We provide experimental data for the temperature, magnetic field and bias current dependence of its low-field magnetoresistance. We are then able to separate the contribution from anisotropic magnetoresistance, and the magnetization processes in the vicinity of the grain boundary. Our data indicate that with the magnetic field applied parallel to the grain boundary the magnetization process is dominated by domain wall motion, whereas with the field in the perpendicular direction the magnetoresistance is determinedby coherent rotation of magnetization directions

Low-field magnetoresistance in perovskite manganites: Magnetic field, temperature, and current dependence

The low-field response from single bicrystal grain boundary junction of La0.7Sr0.3MnO3 has been investigated. We provide experimental data for the temperature, magnetic field and bias current dependence of its low-field magnetoresistance. We are then able to separate the contribution from anisotropic magnetoresistance, and the magnetization processes in the vicinity of the grain boundary. Our data indicate that with the magnetic field applied parallel to the grain boundary the magnetization process is dominated by domain wall motion, whereas with the field in the perpendicular direction the magnetoresistance is determinedby coherent rotation of magnetization directions

Semiconductive Nb-doped BaTiO3 films grown by pulsed injection metalorganic chemical vapor deposition

International audienc

Oxides heterostructures for nanoelectronics

International audienceWe summarise in this paper the work of two groups focusing on the synthesis and characterisation of functional oxide for nanoelectronic applications. In the first section, we discuss the growth by liquid-injection MOCVD of oxides heterostructures. Interface engineering for the minimisation of silicate formation during the growth of polycrystalline SrTiO(3) on Si is first presented. It is realised via the change of reactant flow or chemical nature at the Si Surface. We then report on the epitaxy on oxide substrates of manganites films and superlattices and on their magnetic and electrical properties. La(0.7)Sr(0.3)MnO(3) and La(0.8)MnO(3-delta) as well as multiferroic hexagonal ReMnO(3) manganites are considered. We show that the film thickness and related strain may be used to tune the properties. Finally, we demonstrate the growth of MgO nanowires by CVD at a moderate temperature of 600 degrees C, using gold as a catalyst. In the second section, we discuss the growth of epitaxial oxide heterostructures by MBE. First, the direct epitaxy of SrTiO(3) on Si is considered. Issues and control of the SrTiO(3)/Si interface are discussed. An abrupt interface is achieved. We show that SrTiO(3) on Si can be used as a buffer layer for the epitaxy of various perovskite oxides such as LaAlO(3) or La(0.7)Sr(0.3)MnO(3). La(0.7)Sr(0.3)MnO(3), films are ferromagnetic and metallic at room temperature. The epitaxial growth of complex oxides on Si waters opens Lip the route to the integration of a wide variety of functionalities in nanoelectronics. Finally, we discuss the monolithic integration of III-V compounds Such as InP on Si using epitaxial SrTiO(3) buffer layers for the future integration of optics on Si