p-MOSFET total dose dosimeter

A p-MOSFET total dose dosimeter where the gate voltage is proportional to the incident radiation dose. It is configured in an n-WELL of a p-BODY substrate. It is operated in the saturation region which is ensured by connecting the gate to the drain. The n-well is connected to zero bias. Current flow from source to drain, rather than from peripheral leakage, is ensured by configuring the device as an edgeless MOSFET where the source completely surrounds the drain. The drain junction is the only junction not connected to zero bias. The MOSFET is connected as part of the feedback loop of an operational amplifier. The operational amplifier holds the drain current fixed at a level which minimizes temperature dependence and also fixes the drain voltage. The sensitivity to radiation is made maximum by operating the MOSFET in the OFF state during radiation soak

Method and apparatus for characterizing propagation delays of integrated circuit devices

Propagation delay of a signal through a channel is measured by cyclically generating a first step-wave signal for transmission through the channel to a two-input logic element and a second step-wave signal with a controlled delay to the second input terminal of the logic element. The logic element determines which signal is present first at its input terminals and stores a binary signal indicative of that determination for control of the delay of the second signal which is advanced or retarded for the next cycle until both the propagation delayed first step-wave signal and the control delayed step-wave signal are coincident. The propagation delay of the channel is then determined by measuring the time between the first and second step-wave signals out of the controlled step-wave signal generator

Design and qualification of the SEU/TD Radiation Monitor chip

This report describes the design, fabrication, and testing of the Single-Event Upset/Total Dose (SEU/TD) Radiation Monitor chip. The Radiation Monitor is scheduled to fly on the Mid-Course Space Experiment Satellite (MSX). The Radiation Monitor chip consists of a custom-designed 4-bit SRAM for heavy ion detection and three MOSFET's for monitoring total dose. In addition the Radiation Monitor chip was tested along with three diagnostic chips: the processor monitor and the reliability and fault chips. These chips revealed the quality of the CMOS fabrication process. The SEU/TD Radiation Monitor chip had an initial functional yield of 94.6 percent. Forty-three (43) SEU SRAM's and 14 Total Dose MOSFET's passed the hermeticity and final electrical tests and were delivered to LL

Non-LTE, Relativistic Accretion Disk Fits to 3C~273 and the Origin of the Lyman Limit Spectral Break

We fit general relativistic, geometrically thin accretion disk models with non-LTE atmospheres to near simultaneous multiwavelength data of 3C~273, extending from the optical to the far ultraviolet. Our model fits show no flux discontinuity associated with a hydrogen Lyman edge, but they do exhibit a spectral break which qualitatively resembles that seen in the data. This break arises from relativistic smearing of Lyman emission edges which are produced locally at tens of gravitational radii in the disk. We discuss the possible effects of metal line blanketing on the model spectra, as well as the substantial Comptonization required to explain the observed soft X-ray excess. Our best fit accretion disk model underpredicts the near ultraviolet emission in this source, and also has an optical spectrum which is too red. We discuss some of the remaining physical uncertainties, and suggest in particular that an extension of our models to the slim disk regime and/or including nonzero magnetic torques across the innermost stable circular orbit may help resolve these discrepancies.Comment: Accepted for publication in Ap

End-of-fabrication CMOS process monitor

A set of test 'modules' for verifying the quality of a complementary metal oxide semiconductor (CMOS) process at the end of the wafer fabrication is documented. By electrical testing of specific structures, over thirty parameters are collected characterizing interconnects, dielectrics, contacts, transistors, and inverters. Each test module contains a specification of its purpose, the layout of the test structure, the test procedures, the data reduction algorithms, and exemplary results obtained from 3-, 2-, or 1.6-micrometer CMOS/bulk processes. The document is intended to establish standard process qualification procedures for Application Specific Integrated Circuits (ASIC's)

Method for characterizing the upset response of CMOS circuits using alpha-particle sensitive test circuits

A method for predicting the SEU susceptibility of a standard-cell D-latch using an alpha-particle sensitive SRAM, SPICE critical charge simulation results, and alpha-particle interaction physics. A technique utilizing test structures to quickly and inexpensively characterize the SEU sensitivity of standard cell latches intended for use in a space environment. This bench-level approach utilizes alpha particles to induce upsets in a low LET sensitive 4-k bit test SRAM. This SRAM consists of cells that employ an offset voltage to adjust their upset sensitivity and an enlarged sensitive drain junction to enhance the cell's upset rate

Product assurance technology for procuring reliable, radiation-hard, custom LSI/VLSI electronics

Advanced measurement methods using microelectronic test chips are described. These chips are intended to be used in acquiring the data needed to qualify Application Specific Integrated Circuits (ASIC's) for space use. Efforts were focused on developing the technology for obtaining custom IC's from CMOS/bulk silicon foundries. A series of test chips were developed: a parametric test strip, a fault chip, a set of reliability chips, and the CRRES (Combined Release and Radiation Effects Satellite) chip, a test circuit for monitoring space radiation effects. The technical accomplishments of the effort include: (1) development of a fault chip that contains a set of test structures used to evaluate the density of various process-induced defects; (2) development of new test structures and testing techniques for measuring gate-oxide capacitance, gate-overlap capacitance, and propagation delay; (3) development of a set of reliability chips that are used to evaluate failure mechanisms in CMOS/bulk: interconnect and contact electromigration and time-dependent dielectric breakdown; (4) development of MOSFET parameter extraction procedures for evaluating subthreshold characteristics; (5) evaluation of test chips and test strips on the second CRRES wafer run; (6) two dedicated fabrication runs for the CRRES chip flight parts; and (7) publication of two papers: one on the split-cross bridge resistor and another on asymmetrical SRAM (static random access memory) cells for single-event upset analysis

Product assurance technology for custom LSI/VLSI electronics

The technology for obtaining custom integrated circuits from CMOS-bulk silicon foundries using a universal set of layout rules is presented. The technical efforts were guided by the requirement to develop a 3 micron CMOS test chip for the Combined Release and Radiation Effects Satellite (CRRES). This chip contains both analog and digital circuits. The development employed all the elements required to obtain custom circuits from silicon foundries, including circuit design, foundry interfacing, circuit test, and circuit qualification

Non-LTE Models and Theoretical Spectra of Accretion Disks in Active Galactic Nuclei. III. Integrated Spectra for Hydrogen-Helium Disks

We have constructed a grid of non-LTE disk models for a wide range of black hole mass and mass accretion rate, for several values of viscosity parameter alpha, and for two extreme values of the black hole spin: the maximum-rotation Kerr black hole, and the Schwarzschild (non-rotating) black hole. Our procedure calculates self-consistently the vertical structure of all disk annuli together with the radiation field, without any approximations imposed on the optical thickness of the disk, and without any ad hoc approximations to the behavior of the radiation intensity. The total spectrum of a disk is computed by summing the spectra of the individual annuli, taking into account the general relativistic transfer function. The grid covers nine values of the black hole mass between M = 1/8 and 32 billion solar masses with a two-fold increase of mass for each subsequent value; and eleven values of the mass accretion rate, each a power of 2 times 1 solar mass/year. The highest value of the accretion rate corresponds to 0.3 Eddington. We show the vertical structure of individual annuli within the set of accretion disk models, along with their local emergent flux, and discuss the internal physical self-consistency of the models. We then present the full disk-integrated spectra, and discuss a number of observationally interesting properties of the models, such as optical/ultraviolet colors, the behavior of the hydrogen Lyman limit region, polarization, and number of ionizing photons. Our calculations are far from definitive in terms of the input physics, but generally we find that our models exhibit rather red optical/UV colors. Flux discontinuities in the region of the hydrogen Lyman limit are only present in cool, low luminosity models, while hotter models exhibit blueshifted changes in spectral slope.Comment: 20 pages, 31 figures, ApJ in press, spectral models are available for downloading at http://www.physics.ucsb.edu/~blaes/habk

Disc-oscillation resonance and neutron star QPOs: 3:2 epicyclic orbital model

The high-frequency quasi-periodic oscillations (HF QPOs) that appear in the X-ray fluxes of low-mass X-ray binaries remain an unexplained phenomenon. Among other ideas, it has been suggested that a non-linear resonance between two oscillation modes in an accretion disc orbiting either a black hole or a neutron star plays a role in exciting the observed modulation. Several possible resonances have been discussed. A particular model assumes resonances in which the disc-oscillation modes have the eigenfrequencies equal to the radial and vertical epicyclic frequencies of geodesic orbital motion. This model has been discussed for black hole microquasar sources as well as for a group of neutron star sources. Assuming several neutron (strange) star equations of state and Hartle-Thorne geometry of rotating stars, we briefly compare the frequencies expected from the model to those observed. Our comparison implies that the inferred neutron star radius "RNS" is larger than the related radius of the marginally stable circular orbit "rms" for nuclear matter equations of state and spin frequencies up to 800Hz. For the same range of spin and a strange star (MIT) equation of state, the inferrred radius RNS is roughly equal to rms. The Paczynski modulation mechanism considered within the model requires that RNS < rms. However, we find this condition to be fulfilled only for the strange matter equation of state, masses below one solar mass, and spin frequencies above 800Hz. This result most likely falsifies the postulation of the neutron star 3:2 resonant eigenfrequencies being equal to the frequencies of geodesic radial and vertical epicyclic modes. We suggest that the 3:2 epicyclic modes could stay among the possible choices only if a fairly non-geodesic accretion flow is assumed, or if a different modulation mechanism operates.Comment: 7 pages, 4 figures (in colour), accepted for publication in Astronomy & Astrophysic