Triplet-singlet relaxation in semiconductor single and double quantum dots

We study the triplet-singlet relaxation in two-electron semiconductor quantum dots. Both single dots and vertically coupled double dots are discussed. In our work, the electron-electron Coulomb interaction, which plays an important role in the electronic structure, is included. The spin mixing is caused by spin-orbit coupling which is the key to the triplet-singlet relaxation. We show that the selection rule widely used in the literature is incorrect unless near the crossing/anticrossing point in single quantum dots. The triplet/singlet relaxation in double quantum dots can be markedly changed by varying barrier height, inter-dot distance, external magnetic field and dot size.Comment: 7 pages, 4 figures, PRB in pres

Copula-based assimilation of radar and gauge information to derive bias corrected precipitation fields

This study addresses the problem of combining radar information and gauge measurements. Gauge measurements are the best available source of absolute rainfall intensity albeit their spatial availability is limited. Precipitation information obtained by radar mimics well the spatial patterns but is biased for their absolute values. <br><br> In this study copula models are used to describe the dependence structure between gauge observations and rainfall derived from radar reflectivity at the corresponding grid cells. After appropriate time series transformation to generate "iid" variates, only the positive pairs (radar >0, gauge >0) of the residuals are considered. As not each grid cell can be assigned to one gauge, the integration of point information, i.e. gauge rainfall intensities, is achieved by considering the structure and the strength of dependence between the radar pixels and all the gauges within the radar image. Two different approaches, namely <i>Maximum Theta</i> and <i>Multiple Theta</i>, are presented. They finally allow for generating precipitation fields that mimic the spatial patterns of the radar fields and correct them for biases in their absolute rainfall intensities. The performance of the approach, which can be seen as a bias-correction for radar fields, is demonstrated for the Bavarian Alps. The bias-corrected rainfall fields are compared to a field of interpolated gauge values (ordinary kriging) and are validated with available gauge measurements. The simulated precipitation fields are compared to an operationally corrected radar precipitation field (RADOLAN). The copula-based approach performs similarly well as indicated by different validation measures and successfully corrects for errors in the radar precipitation

Theory of excitons in cubic III-V semiconductor GaAs, InAs and GaN quantum dots: fine structure and spin relaxation

Exciton fine structures in cubic III-V semiconductor GaAs, InAs and GaN quantum dots are investigated systematically and the exciton spin relaxation in GaN quantum dots is calculated by first setting up the effective exciton Hamiltonian. The electron-hole exchange interaction Hamiltonian, which consists of the long- and short-range parts, is derived within the effective-mass approximation by taking into account the conduction, heavy- and light-hole bands, and especially the split-off band. The scheme applied in this work allows the description of excitons in both the strong and weak confinement regimes. The importance of treating the direct electron-hole Coulomb interaction unperturbatively is demonstrated. We show in our calculation that the light-hole and split-off bands are negligible when considering the exciton fine structure, even for GaN quantum dots, and the short-range exchange interaction is irrelevant when considering the optically active doublet splitting. We point out that the long-range exchange interaction, which is neglected in many previous works, contributes to the energy splitting between the bright and dark states, together with the short-range exchange interaction. Strong dependence of the optically active doublet splitting on the anisotropy of dot shape is reported. Large doublet splittings up to 600 $\mu$eV, and even up to several meV for small dot size with large anisotropy, is shown in GaN quantum dots. The spin relaxation between the lowest two optically active exciton states in GaN quantum dots is calculated, showing a strong dependence on the dot anisotropy. Long exciton spin relaxation time is reported in GaN quantum dots. These findings are in good agreement with the experimental results.Comment: 22+ pages, 16 figures, several typos in the published paper are corrected in re

Theory of semiconductor quantum-wire based single- and two-qubit gates

A GaAs/AlGaAs based two-qubit quantum device that allows the controlled generation and straightforward detection of entanglement by measuring a stationary current-voltage characteristic is proposed. We have developed a two-particle Green's function method of open systems and calculate the properties of three-dimensional interacting entangled systems non-perturbatively. We present concrete device designs and detailed, charge self-consistent predictions. One of the qubits is an all-electric Mach-Zehnder interferometer that consists of two electrostatically defined quantum wires with coupling windows, whereas the second qubit is an electrostatically defined double quantum dot located in a second two-dimensional electron gas beneath the quantum wires. We find that the entanglement of the device can be controlled externally by tuning the tunneling coupling between the two quantum dots.Comment: 16 pages, 13 figures, RevTex4 two-column format, to appear in Phys. Rev.

The phase diagram and bulk thermodynamical quantities in the NJL model at finite temperature and density

We reexamine the recent instanton motivated studies of Alford, Rajagopal and Wilczek, and Berges and Rajagopal in the framework of the standard SU(2) Nambu-Jona-Lasinio model. The chiral phase diagram is calculated in the temperature--density plane, and the pressure is evaluated as the function of the density. Obtaining simple approximate relations describing the $T$-$\mu$ and $T$-$p_F$ phase transition lines we find that the results of the instanton based model and that of the NJL model are identical. The diquark transition line is also given.Comment: 11 pages LaTeX plus 7 PS figures. One figure has been added and there are some changes in the text describing thi

Spatial structure of Mn-Mn acceptor pairs in GaAs

The local density of states of Mn-Mn pairs in GaAs is mapped with cross-sectional scanning tunneling microscopy and compared with theoretical calculations based on envelope-function and tight-binding models. These measurements and calculations show that the crosslike shape of the Mn-acceptor wavefunction in GaAs persists even at very short Mn-Mn spatial separations. The resilience of the Mn-acceptor wave-function to high doping levels suggests that ferromagnetism in GaMnAs is strongly influenced by impurity-band formation. The envelope-function and tight-binding models predict similarly anisotropic overlaps of the Mn wave-functions for Mn-Mn pairs. This anisotropy implies differing Curie temperatures for Mn $\delta$-doped layers grown on differently oriented substrates.Comment: 4 pages, 4 figure

In-flight calibration of STEREO-B/WAVES antenna system

The STEREO/WAVES (SWAVES) experiment on board the two STEREO spacecraft (Solar Terrestrial Relations Observatory) launched on 25 October 2006 is dedicated to the measurement of the radio spectrum at frequencies between a few kilohertz and 16 MHz. The SWAVES antenna system consists of 6 m long orthogonal monopoles designed to measure the electric component of the radio waves. With this configuration direction finding of radio sources and polarimetry (analysis of the polarization state) of incident radio waves is possible. For the evaluation of the SWAVES data the receiving properties of the antennas, distorted by the radiation coupling with the spacecraft body and other onboard devices, have to be known accurately. In the present context, these properties are described by the antenna effective length vectors. We present the results of an in-flight calibration of the SWAVES antennas using the observations of the nonthermal terrestrial auroral kilometric radiation (AKR) during STEREO roll maneuvers in an early stage of the mission. A least squares method combined with a genetic algorithm was applied to find the effective length vectors of the STEREO Behind (STEREO-B)/WAVES antennas in a quasi-static frequency range ($L_{antenna} \ll \lambda_{wave}$) which fit best to the model and observed AKR intensity profiles. The obtained results confirm the former SWAVES antenna analysis by rheometry and numerical simulations. A final set of antenna parameters is recommended as a basis for evaluations of the SWAVES data

Spatial structure of an individual Mn acceptor in GaAs

The wave function of a hole bound to an individual Mn acceptor in GaAs is spatially mapped by scanning tunneling microscopy at room temperature and an anisotropic, cross-like shape is observed. The spatial structure is compared with that from an envelope-function, effective mass model, and from a tight-binding model. This demonstrates that anisotropy arising from the cubic symmetry of the GaAs crystal produces the cross-like shape for the hole wave-function. Thus the coupling between Mn dopants in GaMnAs mediated by such holes will be highly anisotropic.Comment: 3 figures, submitted to PR

Silicon-based molecular electronics

Molecular electronics on silicon has distinct advantages over its metallic counterpart. We describe a theoretical formalism for transport through semiconductor-molecule heterostructures, combining a semi-empirical treatment of the bulk silicon bandstructure with a first-principles description of the molecular chemistry and its bonding with silicon. Using this method, we demonstrate that the presence of a semiconducting band-edge can lead to a novel molecular resonant tunneling diode (RTD) that shows negative differential resistance (NDR) when the molecular levels are driven by an STM potential into the semiconducting band-gap. The peaks appear for positive bias on a p-doped and negative for an n-doped substrate. Charging in these devices is compromised by the RTD action, allowing possible identification of several molecular highest occupied (HOMO) and lowest unoccupied (LUMO) levels. Recent experiments by Hersam et al. [1] support our theoretical predictions.Comment: Author list is reverse alphabetical. All authors contributed equally. Email: rakshit/liangg/ ghosha/[email protected]